• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.109-116
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• 2001

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to form the oxide layer and the characteristics of the oxide layer formation are investigated. AIS152100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4um in coating thickness. AISI1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitride environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Korean Journal of Ichthyology
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• v.8 no.2
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• pp.47-56
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• 1996

Hydrography of the Korea Strait was influenced by the various water masses such as Korean coastal water, East Sea cold water, and Tsushima Current. Anchovy larvae were frequently found in the area influenced by the Tsushima Current. Anchovy appeared in all seasons and were most abundant in summer. Anchovy was more abundant in the middle layer(30~70m) than the surface layer in spring and summer and was little in the deeper layer beyond the depth of 100m. It was most abundant in the surface layer in autumn, and decreased toward the deeper layer. They were more abundant in the middle layer(30~50m) than in the surface layer and the bottom layer in winter. Anchovy was most abundant in the depth of 30m to 70m during the day time, however it was more abundant in the surface layer during the night time. Although vertical distribution patterns of abundance varied seasonally and diurnally, most of the larval anchovy distributed in the upper layer within the depth of 100m and in the upper layer above the thermocline in summer and autumn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.388-389
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• 2005

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.20-24
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• 1994

The read/write characteristics of CoCr/NiFe double layered media are strongly affected by the magnetic properties of NiFe magnetic soft layer as well as those of CoCr recording layer. Modification of the permalloy layer by NiFe/Ge multilayer scheme resulted in the higher recording sensitivity and the higher reproduced voltage of CoCr/NiFe medium and this is attributed to the higher permeability of the back layer and high perpendicular anisotropy of the CoCr recording layer. Although higher permeability of back layer results in higher recording sensitivity, the increment of the reproduced voltage was not remarkable, which can be confirmed in the FEM numerical analysis. On the contrary, peak shift characteristics of the CoCr/NiFe medium with the NiFe multi back layer was deteriorated compared to that of the CoCr/NiFe medium with NiFe single back layer. Insertion of ferromagnetic thin CoZrNb intermediate layer between CoCr and NiFe layer was effective to ensure large reproduced voltage and low peak shift. These recoridng characteristics were also discussed in connection with microstructural characteristics.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.73-84
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• 2002

Fast and accurate new capacitance determination methodology for non-uniform complicated multi-layer VLSI interconnects is presented. Since a capacitance determination of intricate multi-layer interconnects using 3-dimensional field-solver is not practical, quasi-3-dimensional methodology is presented. Interconnects with discontinuity (i.e., bend structure and different spacing between lines, etc.) are partitioned. Then, each partial capacitance of divided parts is extracted by using 2-dimensional extraction methodology. For a multi-layer interconnects with shielding layer, the system can be simplified by investigating a distribution of charge in it. Thereby, quasi-3-dimensional capacitance for multi-layer interconnects can be determined by combining solid-ground based 2-dimensional capacitance and shielding effect which is independently determined with layout dimensions. This methodology for complicated multi-layer interconnects is more accurate and cost-efficient than conventional 3-dimensional methodology It is shown that the quasi-3-dimensional capacitance methodology has excellent agreement with 3-dimensional field- solver-based results within 5% error.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.272-280
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• 1997

The Thermal Barrier Coation(TBC) to improve the that barrier and wear resistant propenrty in high temperature ofthe aircraftength between the accumlation of the aircraft engine and the automobile engine has usually the two layer structure. One is a creamic top layer for heat insulation and the other is a metal bond layer to facilitate the bond strength between the top ceramic layer and the substrate. But, the coated layers should be peeled off because of the accumulation of the thermal stress by the differance of the thermal expantion coefficient between metal and ceramics in a hrat cyclic environment. In this study, the intermediate layer by plasm spray process was introduced to reduce the thermal stress. The powders of plasm spray coating were the Yttria Stabilized Zirconia (YSZ), the Magnesia Stabillized Zirconia(MSZ) and NiCrAlY. the intermediate layer was sprayed with the powders of the bond cast for the purpose of test were executed. The high temperature wear resistance tends to decreasnceee wear and thermal shock test were exeucuted. The high temperature were resistance of the YSZ TBC is better that of the MSZ TBC. The wearrsistance tends to decrease accoring to incresing the temperature between $400^{\circ}C$to $600^{\circ}C$. The thermal shock life of the 3 layer TBC with YSZ top casting was the most outstanding thermal shock rsisstasnce. This means that the intermediate layer should play an importnat roll to alleviate the diffrerence of the thermal expansion coef frcients between metallic layer and cermics layer.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.6
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• pp.485-491
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• 2009

In present work, NiO/YSZ anode functional layer was prepared by nano NiO powder and 8YSZ powder. The nano NiO powders were made by Pulsed wire evaporation (PWE) method. Nano NiO- YSZ functional layer was sintered at the temperature of $900-1400^{\circ}C$. The prepared functional layer was characterized by scanning electron microscopy (SEM) and electrochemical impedance spectroscopy. The nano NiO- YSZ anode functional layer sintered at $1300^{\circ}C$ shows the lowest polarization resistance. Nano NiO- YSZ anode functional layer shows about two times smaller polarization resistance than the anode functional layer made by commercial NiO-YSZ powders. Based on these experimental results, it is concluded that the nano NiO-YSZ cermet is suitable as a anode functional layer operated at $800^{\circ}C$.