• 제목/요약/키워드: layer

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Layer별 Scanning을 사용한 취약성 분석 방법 (Method of Vulnerability Analysis from Layer Scanning)

  • 천우성;박대우
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2010년도 춘계학술대회
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    • pp.277-280
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    • 2010
  • 네트워크에서 OSI 7 Layer를 기반으로 통신 프로토콜이 구현되고 있고, 인터넷은 TCP/IP Layer를 중심으로 취약성이 발견되고 공격을 당하고 있다. 본 논문은 Scanning 프로그램들을 사용하여 네트워크에 Layer별로 Scanning을 실시하고 그에 따른 취약성을 각 Layer별로 분석한다. 각 Layer별 취약점과 Scanning 프로그램에서 분석 결과들에 대한 차이점을 분석 연구한다. 분석된 결과들에 대한 Scanning 프로그램에 대한 특성을 반영한 Scanning방법에 대한 특장점을 연구하고, 각 Layer별로 보안 대응 방안을 제시한다. 본 연구의 결과는 해커의 공격에 대한 취약성을 분석과 방어를 위한 보안정책 수립에 대한 자료로 활용되어 네트워크의 보안을 강화하는데 기여 할 것이다.

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HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발 (Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers)

  • 이태성;이병욱;홍진수;김창교
    • 한국전기전자재료학회논문지
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    • 제21권9호
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    • pp.853-858
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    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

Adaptive ARQ Method for Enhancements of LTE MAC Protocol

  • Jung, Yonghak;Kwon, Youngmi
    • 한국멀티미디어학회논문지
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    • 제19권12호
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    • pp.1992-1999
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    • 2016
  • In layered communication architecture, each layer is designed to service its own functions to higher layer while getting serviced by lower layer. Usually layered architectures are not optimized in a total view of whole services and functions. So cross layer design pursues performance enhancements by optimizing in various ways. In LTE, MAC layer uses HARQ mechanism and RLC layer uses ARQ mechanism for retransmission. According to the 3GPP 36.331 specification, two layers' cooperation may not happen in an optimized way. This paper suggests an adaptive MAC layer approach which RLC layer's function might be initiated in MAC layer in advance to utilize MAC layer's idling wasting time for RLC layer's next decision. This adaptive ARQ method in MAC layer speeds up the next retransmission and reduces the overall transmission time. Emulation shows the improved performance in total retransmission time and retransmission success ratio. In wireless shadow area, the retransmission occurs frequently. Our approach has strong points in this poor wireless condition.

i-double layer를 사용한 박막태양전지 특성향상에 관한 연구 (A study on improvement of amorphous silicon solar cell using i-double layer)

  • 장주연;송규완;이준신
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.115.1-115.1
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    • 2011
  • 최근 기본적인 pin 구조의 박막 cell 에서 i layer를 최적화 시키는 방안으로 double layer 구조가 많이 연구되고 있다. 본 연구에서는 ASA(Advanced Semicon ductor Analysis) simulation을 이용하여 i-double layer 최적화에 대한 연구를 진행해 보았다. 두께 150/150nm의 i double layer의 band gap 가변을 한 simulation 결과를 보았을 때, p쪽의 band gap이 상승하면서 intrinsic layer 내의 field가 증가하여 recombination center가 감소하였으나 FF의 감소가 있었다. n쪽의 band gap을 상승 시켰을때 n/i 쪽 field 증가로 Voc가 상승되어 초기 효율이 증가하였으나 intrinsic layer내의 field가 감소하여 recombination center가 오히려 증가하였다. 결과적으로 electric field와 효율을 동시에 고려했을 때 두께 300nm, 1.75의 band gap을 가지는 single layer 보다 150/150nm두께에 1.8/1.7 또는 1.8/1.75의 bandgap을 가지는 double layer를 사용하였을 때 보다 높은 효율을 얻을 수 있었다.

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전계방출광원용 고효율 에노드 형광막 특성 연구(I) - 금속막 (Study on the High Efficiency of Anode Phosphor Electrode for Filed Emission Lamp (I) Metal Layer)

  • 이선희;김광복;김용원;유용찬
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2007년도 춘계학술대회 논문집
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    • pp.7-10
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    • 2007
  • The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An Al metal layer on the phosphor layer may get rid of these problems. This Al metal layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and Al metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with Al metal and inter layer increased the brightness and luminescence efficiency 1.5 times more than only phosphor layer in anode.

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The Study of Luminescence Efficiency by change of OLED's Hole Transport Layer

  • Lee, Jung-Ho
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권2호
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    • pp.52-55
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    • 2006
  • The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

Development of multi-cell flows in the three-layered configuration of oxide layer and their influence on the reactor vessel heating

  • Bae, Ji-Won;Chung, Bum-Jin
    • Nuclear Engineering and Technology
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    • 제51권4호
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    • pp.996-1007
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    • 2019
  • We investigated the influence of the aspect ratio (H/R) of the oxide layer on the reactor vessel heating in three-layer configuration. Based on the analogy between heat and mass transfers, we performed mass transfer experiments to achieve high Rayleigh numbers ranging from $6.70{\times}10^{10}$ to $7.84{\times}10^{12}$. Two-dimensional (2-D) semi-circular apparatuses having the internal heat source were used whose surfaces of top, bottom and side simulate the interfaces of the oxide layer with the light metal layer, the heavy metal layer, and the reactor vessel, respectively. Multi-cell flow pattern was identified when the H/R was reduced to 0.47 or less, which promoted the downward heat transfer from the oxide layer and possibly mitigated the focusing effect at the upper metallic layer. The top boundary condition greatly affected the natural convection of the oxide layer due to the presence of secondary flows underneath the cold light metal layer.

Light-emitting devices with polymer-organic heterostructure

  • Do, Lee-Mi;Hwang, Do-Hoon;Choi, Kang-Hoon;Lee, Hyang-Mok;Jung, Sang-Don;Zyung, Taehyoung
    • Journal of the Optical Society of Korea
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    • 제1권2호
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    • pp.116-119
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    • 1997
  • Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

유기 전기 발광 소자에서 $\alpha$-septithiophene을 이용한 buffer layer의 영향 (The effects of buffer layer using $\alpha$-septithiophene on the organic light emitting diode)

  • 이기욱;임성택;신동명;박종욱;박호철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.53-56
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    • 2002
  • The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

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Effect of Additional Ag Layer on Corrosion Protection of Cu-Electrodeposited AZ31 Mg Alloy

  • Phuong, Nguyen Van;Moon, Sungmo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.97-97
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    • 2017
  • This study investigated the corrosion protection by electrodeposited copper layer on AZ31 Mg alloy with and without additional silver layer by immersion test, salt spray test, OCP transient and potentiodynamic polarization experiment. The single electrodeposited Cu layer on AZ31 Mg alloy showed a nodular structure with many imperfections of crevices between the nodules, which resulted in the fast initiation of pitting corrosion within first few hours of immersion. Double-layer coating of Cu and outer Ag layer slightly increased the initiation time for pitting corrosion. Triple-layer coatings of Cu/Ag/Cu exhibited the most efficient corrosion protection of AZ31 Mg alloy, compared to the single- and double-layer coatings. Surface morphology of the outer Cu layer in the triple-layer was changed from the nodular structure to fine particle structure with no crevices due to the presence of an additional Ag layer. Thus, the improved corrosion resistance of AZ31 Mg alloy by electrodeposited Cu/Ag or Cu/Ag/Cu layers is readily ascribed to the decreased number of imperfections in the electrodeposited layers due to the additional silver layer. It is concluded that the additional silver layer provides many nucleation sites for the second Cu plating, resulting in the formation of finer and denser structure than the first Cu electrodeposit.

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