• Title/Summary/Keyword: lattice structures

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Adsorption Characteristics of Nitrogen in Carbonaceous Micropore Structures with Local Molecular Orientation (국부분자배향의 탄소 미세기공 구조에 대한 질소의 흡착 특성)

  • Seo, Yang Gon
    • Clean Technology
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    • v.28 no.3
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    • pp.249-257
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    • 2022
  • The adsorption equilibria of nitrogen on a region of nanoporous carbonaceous adsorbent with local molecular orientation (LMO) were calculated by grand canonical Monte Carlo simulation at 77.16 K. Regions of LMO of identical size were arranged on a regular lattice with uniform spacing. Microporosity was predominately introduced to the model by removing successive out-of-plane domains from the regions of LMO and tilting pores were generated by tilting the basic structure units. This pore structure is a more realistic model than slit-shaped pores for studying adsorption in nanoporous carbon adsorbents. Their porosities, surface areas, and pore size distributions according to constrained nonlinear optimization were also reported. The adsorption in slit shaped pores was also reported for reference. In the slit shaped pores, a clear hysteresis loop was observed in pores of greater than 5 times the nitrogen molecule size, and in capillary condensation and reverse condensation, evaporation occurred immediately at one pressure. In the LMO pore model, three series of local condensations at the basal slip plane, armchair slip plane and interconnected channel were observed during adsorption at pore sizes greater than about 6 times the nitrogen molecular size. In the hysteresis loop, on the other hand, evaporation occurred at one or two pressures during desorption.

A Study on Load-carrying Capacity Design Criteria of Jack-up Rigs under Environmental Loading Conditions (환경하중을 고려한 Jack-up rig의 내하력 설계 기준에 대한 연구)

  • Park, Joo Shin;Ha, Yeon Chul;Seo, Jung Kwan
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.26 no.1
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    • pp.103-113
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    • 2020
  • Jack-up drilling rigs are widely used in the offshore oil and gas exploration industry. Although originally designed for use in shallow waters, trends in the energy industry have led to a growing demand for their use in deep sea and harsh environmental conditions. To extend the operating range of jack-up units, their design must be based on reliable analysis while eliminating excessive conservatism. In current industrial practice, jack-up drilling rigs are designed using the working(or allowable) stress design (WSD) method. Recently, classifications have been developed for specific regulations based on the load and resistance factor design (LRFD) method, which emphasises the reliability of the methods. This statistical method utilises the concept of limit state design and uses factored loads and resistance factors to account for uncertainly in the loads and computed strength of the leg components in a jack-up drilling rig. The key differences between the LRFD method and the WSD method must be identified to enable appropriate use of the LRFD method for designing jack-up rigs. Therefore, the aim of this study is to compare and quantitatively investigate the differences between actual jack-up lattice leg structures, which are designed by the WSD and LRFD methods, and subject to different environmental load-to-dead-load ratios, thereby delineating the load-to-capacity ratios of rigs designed using theses methods under these different enviromental conditions. The comparative results are significantly advantageous in the leg design of jack-up rigs, and determine that the jack-up rigs designed using the WSD and LRFD methods with UC values differ by approximately 31 % with respect to the API-RP code basis. It can be observed that the LRFD design method is more advantageous to structure optimization compared to the WSD method.

A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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Mössbauer Study of Tb2Bi1GaxFe5-xO12(x=0, 1) (Tb2Bi1GaxFe5-xO12(x=0, 1)의 뫼스바우어 분광연구)

  • Park, Il-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.18 no.2
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    • pp.67-70
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    • 2008
  • $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) fabricated by sol-gel and vacuum sealed annealing process. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) have been studied by x-ray diffraction(XRD), vibrating sample magnetometer, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The determined lattice constants $a_0$ of x = 0, and 1 are $12.497\AA$, and $12.465\AA$, respectively. The distribution of gallium and iron in $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ is studied by Rietveld refinement. Based on Rietveld refinement results, the terbium and bismuth ions occupy the 24c site, iron ions occupy the 24d, l6a site, and nonmagmetic gallium ions occupy the 16a site. In order to verify the magnetic site occupancy of iron and gallium, we have taken $M\ddot{o}ssbauer$ spectra for $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) at room temperature. From the results of $M\ddot{o}ssbauer$ spectra analysis, the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 60.8 % and 39.2 %, respectively, and the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 74.7 % and 25.3 %, respectively. It is noticeable that all of the nonmagnetic Ga atoms occupy the 16a site by vacuum annealing process.

Characteristic of Wave Diffraction and Reflection for Irregular Waves in SWASH Model Around Small Port Structures (소규모 항만 구조물 주변에서 불규칙파에 대한 SWASH 모형의 반사 및 회절)

  • Kwon, Kyong Hwan;Park, Chang Wook;Park, Il Heum;Kim, Jong Hoon
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.31 no.6
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    • pp.468-477
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    • 2019
  • The numerical model of Boussinesq approximation, which is mainly used for evaluating the port calmness due to the irregular waves, has a limit of applicability of lattice size in ports such as marinas with narrow port openings of around 30m. The SWASH model controls the partial reflection according to the depth, porosity coefficient and structure size when applying the reflected wave incident on the structure and terrain. In this study, the partial reflection evaluation at the front of the structure according to the bottom shape and the shape of the structure are examined. In order to evaluate the reproducibility of the model due to the diffraction waves entering the term, the area of incidence at right angles and inclination of the structure is constructed and compared with the diffraction theory suggested by Goda et al. (1978). The experimental results of the sectional structure reflectances calculated as the depth mean show reflectances similar to the approximate values of the reflectances presented by Stelling and Ahrens (1981). It is considered that the reflected wave is well reproduced according to the control of the reflected wave at the boundary and the shape and topography of the structure. Compared with previous studies to examine the diffraction of the wave incident from the breakwater opening, the wave incidence angle and the shape of the diffraction wave are very similar to the theoretical values, but both oblique and rectangular incidence In the case where the direction concentration is small, the diffraction degree is underestimated in some sections with the crest ratio of 0.5 to 0.6.