• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Applied Microscopy
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• 제47권3호
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• pp.208-213
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• 2017

The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.107-110
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• 2000

($^{11}$B NMR measurements have been performed on single crystals of LuNi$_2$B$_2$C superconductor to investigate vortex lattice structures and dynamical behavior. The spectrum in the superconducting state is significantly broadened by local field inhomogeneity due to the vortex lattice and the peak point of the spectrum shifts toward low magnetic field due to the imperfect field penetration. The linewidth of the spectrum reflecting local field variation is much smaller than expected for conventional vortex lattices and shows peculiar increase at low temperature. Furthermore, the transverse relaxation rate, 1/T$_2$, probing the slow motion of vortices, exhibits a single peak as temperature decreases. These prominent results highlight significant fluctuation of vortices even for this low T$_c$, and nearly isotropic 3D superconductor.

• Smart Structures and Systems
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• 제18권5호
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• pp.865-884
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• 2016

We have previously demonstrated a microfluidic elastomer, which changes apparent color and could have potential applications in smart windows. The practical use of such functional microfluidic systems requires rapid and uniform fluid displacement throughout the channel network with minimal amount of liquid supply. The goal of this simulation study is to design various microfluidic networks for similar applications including, but not limited to, the color-switching windows and compare the liquid displacement speed and efficiency of the designs. We numerically simulate and analyze the liquid displacement in the microfluidic networks with serpentine, parallel and lattice channel configurations, as well as their modified versions with wide or tapered distributor and collector channels. The data are analyzed on the basis of numerical criteria defined to evaluate the performance of the corresponding functional systems. We found that the lattice channel network geometry with the tapered distributors and collectors provides most rapid and uniform fluid displacement with minimum liquid waste. The simulation results could give an important guideline for efficient liquid supply/displacement in emerging functional systems with embedded microfluidic networks.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.14-17
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• 2006

A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

• 한국광학회지
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• 제6권4호
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• pp.302-309
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• 1995

상온에서 $1.55{\mu}m$ 를 발진하는 격자 정합된 InGaAs/InGaAsP 양자우물 레이저를 설계하여 주입 운반자 밀도와 온도의 함수로 이득 곡선을 계산하였다. 밴드 구조와 운동량 행력 요소의 계산에는 블록대각화된 8*8 이차 k.p 해밀토니안에 근거한 변환행렬법을 사용하였다. 이 격자정합된 양자우물은 TE 모우드로 발진하였다. 온도가 증가함에 따라 발진파장이 길어졌고, 투명 운반자 밀도는 증가하였으며 미분이득은 감소하였다. 이득 곡선의 온도의존도는 밴드 구조의 온도의존성과 페르미 함수의 온도의존성에 기인하는데 이중 후자의 효과가 주도적인 것이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.115-116
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• 2006

Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the $Pt/Ti/SiO_2/Si$ substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 kHz were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.

• 대한기계학회논문집
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• 제15권3호
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• pp.789-798
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• 1991

본 연구에서는 원통형 구조물의 진동해석을 위하여 통계에너지 분석방식(st- atistical energy analysis:SEA)이 사용되었다. SEA는 4개의 물리적 변수인 구조물 질량(Mi), 주파수대역에 존재하는 고유진동수(Ni), 내부손실계수(internal loss fact- or) 및 상호손실계수(coupling loss factor)를 이용하여 구조물의 진동수준과 구조물 상호간의 에너지 교환을 해석하는 방법으로서 비록 넓은 주파수 범위에 걸쳐 정확한 진동예측을 하기에는 어느정도 오차가 예상되는 단점이 있으나 진동해석이 용이하고 복잡한 계산을 필요로 하지 않기 때문에 대형구조물의 진동해석에 많이 사용되고 있 는 기법이다. 따라서 연구의 대상인 원통형 구조물의 고유진동수를 예측하기 위하여 일차적으로 반경에 의한 곡률영향을 배제시킨 평판에 대한 분석이 시도되었다. 이와 함께 주어진 주파수 대역에 걸쳐 평판및 원통형 구조물의 고유진동수의 차이를 비교하 였다.그결과로부터 원통형 구조물에 대한 고유진동수 계산식을 평판구조물의 굽힘 강성과 곡률반경으로 야기되는 표면응력에 의한 함수로 표현하였다.

• Journal of Magnetics
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• 제10권1호
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• pp.23-27
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• 2005

The crystallographic and magnetic properties of a series of substitutions in nickel ferrite where the Fe³⁺ is replaced with In³⁺ have been investigated using X-ray diffraction (XRD) and Mössbauer spectroscopy. Information on the exact crystalline structure, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles by a Rietveld method. All the crystal structures were found to be cubic with the space group Fd/3m. The lattice constants increased with In³⁺ concentration. The expansion of the tetrahedron was outstanding, indicative of the tetrahedral (A) site preference of larger indium ion. The Mossbauer spectra showed two sets of sextuplet originating from ferric ions occupying the tetrahedral sites and the octahedral (B) sites under the Neel temperature T_N. Regardless of the composition x, the electric quadrupole splitting was zero within the experimental error. At x = 0.2, the magnetic hyperfine fields increased slightly, which meant that the nonmagnetic indium ions occupied preferentially the A-site. At the same time, the intensity of the B-site sub-spectra decreased markedly at the elevated temperature, indicating that the occupation of the A site by indium induced a considerable perturbation on the B site.

• Bulletin of the Korean Chemical Society
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• 제21권7호
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• pp.679-684
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• 2000

The Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 compounds, both with Ruddlesden-Popper structures, have been synthesized by the ceramic method at $1150^{\circ}C$ under atmospheric pressure. The crystallographic structure of the compounds was assigned to the tetr agonal system with space group 14/mmm by X-ray diffraction(XRD) Rietveld refinement. The reduced lattice volume and lattice parameters increased as the Ta with 5d substitutes for the Nb with 4d in the compounds. The Co/Nb(Ta)O bond length has been determined by X-ray absorption spectroscopic(EXAFS/XANES) analysis and the XRD refinement. The CoO6,octahedra were tetragonally distorted by elongation of Co-O bond along the c-axis. The magnetic measurement shows the compounds Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 have paramagnetic properties and the Co ions with intermediate spin sates between high and low spins in D4h symmetry. All the compounds showed semiconducting behavior whose electrical conductivity increased with temperature up to 1000 K. The electrical conductiviy increased and the activation energy for the conduction decreased as the number of perovskite layers increased in the compounds with chemical formula An+1BnO3n+1.