• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.173-177
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• 2010

The electronic structure of charge-density-wave (CDW) system $CeTe_2$ has been investigated by using angle-resolved photoemission spectroscopy (ARPES). The clearly dispersive band structures are observed in the measured ARPES spectra, indicating the good quality of the single-crystalline sample employed in this study. The four-fold symmetric patterns are observed in the constant energy (CE) mappings, indicating the $2{\times}2$ lattice deformation in the Te(1) sheets. The observed CE images are similar to those of $LaTe_2$, suggesting that Ce 4f states have the minor contribution to the CDW formation in $CeTe_2$. This study reveals that the carriers near the Fermi level should have mainly the Te(1) 5p and Ce 5d character, that the Te(1) 5p bands contribute to the CDW formation, and that the Ce 5d bands cross the Fermi level even in the CDW state.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.617-624
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• 1991

Nonstoichiometric solid solutions of $Y_{1-x}A_xFeO_{3-y}$ (A = Ca, Sr) systems with perovskite structure were prepared for x = 0.00, 0.25, 0.50, 0.75 and 1.00 at 1200$^{\circ}C$ under atmospheric pressure, respectively. Crystallographic structures of the solid solutions of all compositions have been determined by the analysis of X-ray diffraction patterns. Reduced lattice volume of the $Y_{1-x}Ca_xFeO_{3-y}$ system was decreased with increasing x value and that of the $Y_{1-x}Sr_xFeO_{3-y}$ system was increased with increasing the x value. The mole ratios of $ Fe^{4+}$ to $ Fe^{3+}$, ${\tau}$, values in the solid solutions have been determined by Mohr salt's method of analysis and then the mixed valency was identified by Mossbauer spectroscopic analysis at 298 K. The y values were calculated from the x and ${\tau}$, and then nonstoichiometric chemical formulas were fixed. The conduction mechanism could be explained by hopping model of the conduction electrons between the mixed valence states.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.127-133
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• 2012

To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics versus annealing temperature of $Cu_2ZnSnS_4$ which has kesterite structure by substitution low-cost sulfur (S) instead of high-cost selenium (Se). By analyzing XRD patterns, main peak was observed at $2{\theta}=28.5^{\circ}$ when Zn/Sn ratio is 0.8/1.2. And when we observed kesterite structure which has orientation of (112) direction, the more annealing temperature increase the bigger strength of (112) direction is. $Cu_2ZnSnS_4$ thin film showed characteristics of kesterite structure at $550^{\circ}C$. And when we calculated lattice constant, a = 5.5047 and $c=11.014{\AA}$ as same JCPDS (Joint Committee on Powder Standards) data measured. We measured optical transmittance to analyze optical characteristics. Optical transmittance was lower than 65 % at visible ray (${\lambda}=380{\sim}770nm$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Analytical Science and Technology
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• v.11 no.3
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• pp.189-193
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• 1998

Binary alloys, $MoRu_3$ and $MoRh_3$, have been prepared using arc melting furnace. Mo and the noble metals Ru and Rh are the constituents of metallic insoluble residues, which were found in the early days of the post-irradiation studies on uranium oxide fuels. Detailed structural informations about these alloys have not been reported on JCPDS files of ICDD (International Centre for Diffraction Data). The results of X-ray diffraction study showed that the alloy was crystallized in hexagonal close-packing, well known as ${\varepsilon}$-phase. The X-ray diffraction patterns of these alloys matched well to that of $WRh_3$ with $P6_3/mmc$ of space group. The lattice parameters, a and c, were calculated using the least squares extrapolation. It was found from X-ray photoelectron spectroscopic measurements that Mo on the surface of the alloy was oxidized to Mo(6+), which could be removed by sputtering with Ar ions for approximately 15 minutes. The changes in binding energy of Mo, Ru, and Rh on the surface of the alloy were not observed. Magnetic susceptibility measurements resulted in the typical Pauli-paramagnetic behavior in the temperature range of 2 to 300 K.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.106-112
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• 2009

$Ni_{1-x}Mg_xFe_2O_4$ ferrite system was studied by using X-ray diffraction and $M{\ddot{o}}ssbauer$ spectroscopy. The samples were prepared by ceramic sintering method with Mg content x. The X-ray diffraction patterns of samples show phase of cubic spinel structure. There are no remarkable changes of lattice constants in $Ni_{1-x}Mg_xFe_2O_4$ ferrite system. The $M{\ddot{o}}ssbauer$ spectra were consisted of two sets of six lines, respectively, corresponding to $Fe^{3+}$ at tetrahedral and octahedral sites. The magnetic hyperfine field of samples was decreased as increasing Mg contents x in both sites and it was shown Yafet-Kittel magnetic structure. $NiFe_2O_4$ was shown complete inverse spinel, but $NiFe_2O_4$ was shown partial inverse spinel which absorption area ratio (oct/tet) was 1.449 in $M{\ddot{o}}ssbauer$ spectrum.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.219-223
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• 2004

L $i_{0.5}$F $e_{2.5-{\chi}}$R $h_{\chi}$ $O_4$ ($\chi$ = 0.25, 0.50, 0.75, 1.00) has been prepared by solid state reaction. Crystallographic and magnetic properties were investigated by Mossbauer spectroscopy, SQUID magnetometry, and x-ray diffraction. The crystal structure is found to be a cubic spinel structure with space group Fd3m for all the samples. The lattice constant $a_{0}$ increases from 8.3365 $\AA$ to 8.3932 $\AA$ with increasing Rh concentration $\chi$. The migration of Li ion has been confirmed by x-ray patterns and the results of applied field Mossbauer analysis. The temperature dependence of the absorption area of each site was analyzed with the Debye model for the recoil-free fraction. The Debye temperature for the octahedral sites is almost as large as for the tetrahedral sites, thereby suggesting similar inter-atomic binding forces for the octahedral and the tetrahedral sites. The saturated magnetic moment and the Mossbauer spectra taken at 4.2 K under the applied field (6 T) show that the spin structure of L $i_{0.5}$F $e_{2.5-{\chi}}$R $h_{\chi}$ $O_4$ is compatible with the collinear Neel Model.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.