• Title/Summary/Keyword: lattice parameter

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Influence of Zr Addition on TiB2 Modification and Grain Size in Aluminium Alloys (알루미늄 합금에서 Zr첨가가 TiB2의 변형과 결정립크기에 미치는 영향)

  • Kang, Won-Duck;Park, Hyun Gyoon
    • Korean Journal of Metals and Materials
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    • v.49 no.8
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    • pp.619-627
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    • 2011
  • The poisoning effect of Zr in aluminum alloys was investigated by analyzing the filtered cakes of aluminum alloy melt taken with the $Prefil^{(R)}$ footprinter through a variety of analytic instruments, SEM/EDX, Auger, and TEM. Experimental results indicated that the morphology and chemical composition of the aluminum alloys were not modified with the addition of Zr, which is to previous belief that Zr poisoning is caused by modification of $(Ti_{1-x}Zr_x)Al_3$. On the other hand, $TiAl_3$ surroundig $TiB_2$ particles was modified and its lattice parameter was more mismatched by increasing Zr content, leading to less nucleation rate. This is also supported by the observation that the poisoning effect is reduced when Ti is added, resulting in a lower content ratio of Zr to Ti. These results suggest that extra Ti should be added to eliminate the poisoning effect of Zr in aluminum alloys containing Zr.

Influence of Deposition Temperature on the Film Growth Behavior and Mechanical Properties of Chromium Aluminum Nitride Coatings Prepared by Cathodic Arc Evaporation Technique

  • Heo, Sungbo;Kim, Wang Ryeol
    • Journal of the Korean institute of surface engineering
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    • v.54 no.3
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    • pp.139-143
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    • 2021
  • Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H3/E2 ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

Martensitic Stainless Steel Nitrided in a Low-Pressure rf Plasma (RF플라즈마에 의한 마르텐사이트 스테인레스강의 질화에 관한 연구)

  • J.S. Yoo;S.K. Kim
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.69-69
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    • 2001
  • We report a study of the nitriding of the martensitic grade of stainless steel AKSK 420 in a low-pressure rl discharge using pure nitrogen. Much studied samples of the austenitic grade AISI 304 were treated at the same time to provide a comparison. With a treatment time of 4.0 h at $400^{\circ}C$, the nitrogen-rich layer on MSK 420 is 20pm thick and has a hardness about 4.3 times higher than that of the untreated material. The layer thickness is much greater than that obtained on AISI 304 under identical treatment conditions, reflecting the different Cr content of the two alloys. The alloy AlISI 420 is more susceptible than AISI 304 to the formation of CrN and ferrite, and this has a deleterious effect on the hardnes, gain. Below the temperature at which CrN forms, the treated layer retains its martensitic structure, but with a larger lattice parameter than the bulk, a phase that we term expanded martensite, by analogy with the situation with austenitic stainless steel. The fact that the treated layer retains a martensitic structure is interesting in view of previous evidence that nitrogen is an austenite stabilizer.

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Phase Transformation of 2 Components(CaO-, $Y_2O_3$-, MgO-$ZrO_2$) and 3 Components(MgO-$ZrO_2-Al_2O_3)$ Zirconia by X-ray Diffraction and Raman Spectroscopy (X-선회절과 Raman 분광분석을 이용한 2성분계(CaO-, $Y_2O_3$-, MgO-$ZrO_2$) 및 3성분계(MgO-$ZrO_2-Al_2O_3)$ Zirconia의 상전이연구)

  • 은희태;황진명
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.145-156
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    • 1997
  • ZrO2 phase transformations depending on the type and amount of dopants and the sintering temperatures were studied for the 2 components (CaO-, Y2O3-, MgO-ZrO2) and the 3 components(MgO-ZrO2-Al2O3)ZrO2 powder by X-ray diffraction and Raman spectroscopy. In the CaO- and Y2O3-ZrO2 systems, as the CaO and Y2O3 contents increased to 6~15mol% and 3~15mol% respectively, we were not able to identify between tetragonal and cubic in the X-ray diffraction patterns. On the other hand, all Raman modes shifted to lower wavenumbers, decreasing in intensity and the number of bands, markedly. These phenomena were caused by tetragonallongrightarrowcubic phase transformation and interpreted by the breakdown of the wave vector selection rule(k=0) and the structural disorder associated with the formation of oxygen sublattice which was caused by the substitution between Zr4+ ion and Ca2+ or Y3+ ion in ZrO2 matrix. The monoclinic to cubic phase transformation occurred in 10mol% MgO-ZrO2 system. As the Al2O3 content increased from 0 to 20mol% in the MgO-ZrO2-Al2O3 systems, cubic phase transformed to monoclinic phase, this is because the MgO didn't play a role in a stabilizer because of the formation of the spinel(MgAl2O4) by the reaction between MgO and Al2O3, Also, the ZrO2 phase transformation was explained by the change of it's lattice parameters depending on the type and amount of dopants. Namely, as the amount of dopant increased to 10~13mol%, the axial ra-tio c/a came close to unity with increasing the lattice parameter a and decreasing the lattice parameter c. At that time, the tetragonallongrightarrowcubic phase transformation occurred.

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A Molecular Dynamics Simulation Study of Trioctahedral Clay Minerals (삼팔면체 점토광물에 대한 분자동역학 시뮬레이션 연구)

  • Lee, Jiyeon;Lee, Jin-Yong;Kwon, Kideok D.
    • Journal of the Mineralogical Society of Korea
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    • v.30 no.4
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    • pp.161-172
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    • 2017
  • Clay minerals play a major role in the geochemical cycles of metals in the Critical Zone, the Earth surface-layer ranging from the groundwater bottom to the tree tops. Atomistic scale research of the very fine particles can help understand the fundamental mechanisms of the important geochemical processes and possibly apply to development of hybrid nanomaterials. Molecular dynamics (MD) simulations can provide atomistic level insights into the crystal structures of clay minerals and the chemical reactivity. Classical MD simulations use a force field which is a parameter set of interatomic pair potentials. The ClayFF force field has been widely used in the MD simulations of dioctahedral clay minerals as the force field was developed mainly based on dioctahedral phyllosilicates. The ClayFF is often used also for trioctahedral mineral simulations, but disagreement exits in selection of the interatomic potential parameters, particularly for Mg atom-types of the octahedral sheet. In this study, MD simulations were performed for trioctahedral clay minerals such as brucite, lizardite, and talc, to test how the two different Mg atom types (i.e., 'mgo' or 'mgh') affect the simulation results. The structural parameters such as lattice parameters and interatomic distances were relatively insensitive to the choice of the parameter, but the vibrational power spectra of hydroxyls were more sensitive to the choice of the parameter particularly for lizardite.

Structural change and electrical conductivity according to Sr content in Cu-doped LSM (La1-xSrxMn0.8Cu0.2O3) (Sr 함량이 Cu-doped LSM(La1-xSrxMn0.8Cu0.2O3)의 구조적변화와 전기전도도에 미치는 영향)

  • Ryu, Ji-Seung;Noh, Tai-Min;Kim, Jin-Seong;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.2
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    • pp.78-83
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    • 2012
  • The structural change and the electrical conductivity with Sr content in $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ (LSMCu) were studied. $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ ($0.1{\leq}x{\leq}0.4$) were synthesized by EDTA citric complexing process (ECCP). A decrease in the lattice parameters and lattice volumes was observed with increase of Sr content, and these results were attributed to the increasing $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site. The electrical conductivity measured from $500^{\circ}C$ to $1000^{\circ}C$ was increased with increase of Sr content in the $0.1{\leq}x{\leq}0.3$ composition range, and it was 172.6 S/cm (at $750^{\circ}C$) and 177.7 S/cm (at $950^{\circ}C$, the maximum value) in x = 0.3. The electrical conductivity was decreased in x = 0.4 because of the presence of the second phase in the grain boundaries. The lattice volume was contracted by increase of $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site according to increase of Sr content and the electrical conductivity was increased with increase of charge carriers which were involved in the hopping mechanism.

Strong Carrier Localization and Diminished Quantum-confined Stark Effect in Ultra-thin High-Indium-content InGaN Quantum Wells with Violet Light Emission

  • Ko, Suk-Min;Kwack, Ho-Sang;Park, Chunghyun;Yoo, Yang-Seok;Yoon, Euijoon;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.293-293
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    • 2014
  • Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

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A Molecular Dynamics Simulation Study of Hydroxyls in Dioctahedral Phyllosilicates (분자동역학 시뮬레이션을 이용한 이팔면체 점토광물 수산기 연구)

  • Son, Sangbo;Kwon, Kideok D.
    • Journal of the Mineralogical Society of Korea
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    • v.29 no.4
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    • pp.209-220
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    • 2016
  • Clay minerals are a major player to determine geochemical cycles of trace metals and carbon in the critical zone which covers the atmosphere down to groundwater aquifers. Molecular dynamics (MD) simulations can examine the Earth materials at an atomic level and, therefore, provide detailed fundamental-level insights related to physicochemical properties of clay minerals. In the current study, we have applied classical MD simulations with clayFF force field to dioctahedral clay minerals (i.e., gibbsite, kaolinite, and pyrophyllite) to analyze and compare structural parameters (lattice parameter, atomic pair distance) with experiments. We further calculated vibrational power spectra for the hydroxyls of the minerals by using the MD simulations results. The MD simulations predicted lattice parameters and interatomic distances respectively deviated less than 0.1~3.7% and 5% from the experimental results. The stretching vibrational wavenumber of the hydroxyl groups were calculated $200-300cm^{-1}$ higher than experiment. However, the trends in the frequencies among different surface hydroxyl groups of each mineral was consistent with experimental results. The angle formed by the surface hydroxyl group with the (001) plane and hydrogen bond distances of the surface hydroxyls were consistent with experimental result trends. The inner hydroxyls, however, showed results somewhat deviated from reported data in the literature. These results indicate that molecular dynamics simulations with clayFF can be a useful method in elucidating the roles of surface hydroxyl groups in the adsorption of metal ions to clay minerals.

Microstructure and dielectric properties in the La2O3-doped BaTiO3 system (La2O3 첨가에 따른 BaTiO3의 미세구조 및 유전특성)

  • Choi, Woo-Jin;Moon, Kyoung-Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.3
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    • pp.103-109
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    • 2020
  • The effect of La2O3 addition on the crystalline phase, microstructure, and dielectric properties of BaTiO3 has been studied as a function of the amounts of La2O3. 0.3 mol% TiO2-excess BaTiO3 powder was synthesized by solid-state reaction, and then the powder compacts with various amounts of La2O3 were sintered at 1250℃ for 2 hours. Room temperature XRD showed changes in the lattice parameters and a decrease of tetragonality (c/a) as the amounts of La2O3 increased. It can be explained that the phase transition from tetragonal to cubic phase occurred because La3+ replaced Ba2+ site, which increased the instability of the tetragonal phase. As La2O3 was added over 0.1 mol%, the critical driving force for growth (Δgc) increased over maximum driving force (Δgmax). As the result, the grain size decreased with La2O3 addition. Dielectric constant decreased as the amounts of La2O3 increased, which was analyzed with crystal structure and microstructure.

Structural Study of Oxygen Vacancy in CaO Stabilized Cubic-HfO2 Using Density Functional Theory (Density Functional Theory를 이용한 CaO 안정화 Cubic-HfO2의 산소 공공 구조 연구)

  • Kim, Jong-Hoon;Kim, Dae-Hee;Lee, Byeong-Eon;Hwang, Jin-Ha;Kim, Yeong-Cheol
    • Korean Journal of Materials Research
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    • v.18 no.12
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    • pp.673-677
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    • 2008
  • Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.