• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.231-237
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• 2000

CMR Materials RE/sub 1-x/Ca/sub x/MnO₃(RE=La, Nd, A=Ca, Sr) were grown using the floating zone image furnace with halogen lamps as heat source. The growth condition was at 2∼10 mm/hr growth rate in air atmosphere, were 445∼50 rpm and 20∼25 rpm of rotation rate of feedrod and growing crystal, respectively. The grown crystals showed shiny black color and annealed at 1500℃ in a box furnace to release the residual stress during cooling. Characterization analyses of the crystal were carried out using XRD and SEM. The crystal structure of Nd/sub 0.7/Ca/sub 0.3/MnO₃ was analyzed with smart CCD XRD was lattice parameter of a=5.425(4)Å, b=5.434(4)Å, and c=7.712(5)Å, an orthorombic system with space group of pbnm.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.530-536
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• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.43-50
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• 1989

This experiment was conducted to investigate correlation between microstructure and electrical properties according to Zr/Ti mole ratio in Rhombohedral Phase PZT. Domain behavoir was investigated by the change of thermal expansion coefficient. Piezoelectric properties, the temperature dependence of dielectric constant and the change of dielectric constant before and after poling were measured. Crystal structure, the measurement of lattice parameter were carried by X-ray analysis. Domain pattern before and after poling was examined by SEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.5-5
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• 2010

Gallium Nitride(GaN)는 LED, Laser 등에 사용되는 광학적 특성뿐만 아니라 Wide Bandgap의 전기적 특성 또한 주목받고 있다. 본 논문은 600V급 GaN(Gallium Nitride) Power SIT(Static Induction Transistor)에 대해서 Design Parameter 변환에 따른 전기적 (Breakdown Voltgage, On-state Voltage Drop)특성과 열적 (Lattice Temperature Distribution)특성변화를 분석하여 소자가 갖는 구조적 손실을 최소화하였다. 또한, 기존 실리콘 기반 전력소자와 특성 비교를 통하여 GaN Power SIT의 우수성을 증명하였다. GaN Power SIT 소자 설계 및 최적화를 위해서 Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하였다. 실험 결과 수 ${\mu}m$의 소자 두께만으로도 실리콘 전력소자에 비해 더 뛰어난 열 특성과 더 적은 전력소모를 갖는 600V급 GaN Power SIT 소자를 구현할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.55-61
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• 2003

This paper describes how the optical properties of a quasi-one-dimensional photonic crystalline waveguide having a periodic air cavity are influenced by various structural parameters; the electromagnetic fields are simulated using the finite-difference time-domain method. The simulations considered four design parameters: cavity size, defect size, lattice constant, and number of cavity. The parameter sensitivity of the photonic bandgap property of the waveguide having air cavities is examined. A couple of significant design guidelines are obtained. We show that the quasi-one-dimensional photonic crystalline waveguide has significant unrealized potential.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.19-22
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• 2004

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is already developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, the effective elastic properties of polysilicon, $BaTiO_3\;and\;ZrTiO_4$ are extracted using this system and by employing the fraction of the potential site($f_P$) as a kinetics parameter for the microstructure evolution, the statistical tendency of these materials is studied.

• Interaction and multiscale mechanics
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• v.2 no.4
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• pp.353-374
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• 2009

A new seamless multiscale simulation was developed for coupling the continuum model with its molecular dynamics. Kriging-based Finite Element Method (K-FEM) is employed to model the continuum base of the entire domain, while the molecular dynamics (MD) is confined in a localized domain of interest. In the coupling zone, where the MD domain overlaps the continuum model, the overall Hamiltonian is postulated by contributions from the continuum and the molecular overlays, based on a quartic spline scaling parameter. The displacement compatibility in this coupling zone is then enforced by the Lagrange multiplier technique. A multiple-time-step velocity Verlet algorithm is adopted for its time integration. The validation of the present method is reported through numerical tests of one dimensional atomic lattice. The results reveal that at the continuum/MD interface, the commonly reported spurious waves in the literature are effectively eliminated in this study. In addition, the smoothness of the transition from MD to the continuum can be significantly improved by either increasing the size of the coupling zone or expanding the nodal domain of influence associated with K-FEM.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.185-188
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• 2001

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.471-476
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• 1994

The influence of TiO2 addition on the sintering and microstructure of magnesia ceramics was studied. An excess amount of TiO2 over the solid solubility limit reacted with magnesia to form Mg2TiO4 compound above 130$0^{\circ}C$. The deviation of lattice parameter of MgO was estimated to be under 0.2% when existence of TiO2 in MgO. The addition of TiO2 markedly promoted the densification of MgO at comparatively low temperature and the sintered density of about 98% of the theorectical was obtained at 150$0^{\circ}C$, 2h. The densification was mainly governed by grain growth of MgO and the effect of Mg2TiO4 existing as a second phase on depression of grain growth of MgO was not exhibited.