• Bulletin of the Korean Chemical Society
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• 제8권5호
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• pp.398-403
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• 1987

A general theory of polymer adsorption at a semi-permeable oil-water interface of the biphasic solution is presented. The configurational factor of the solution in the presence of the semi-open boundary at the interface is evaluated by the quasicrystalline lattice model. The present theory gives the feature of the bulk concentration equilibria between oil-water subsystems and the surface excesses of ${\Gamma}^{\alpha}$ and ${\Gamma}^\{beta}$ of the polymer segments as a function of the degree of polymerization $\gamma$, the Flory-Huggins parameter in $\beta$-phase $x_{\rho}^{{\beta}_{\rho}}$, the differential adsorption energy parameter in $\beta$-phase $x_{\sigma}^{{\beta}_{\rho}}$, the differential interaction energy parameter ${\Delta}x_{\rho}$ and the bulk concentration of the polymer in ${\beta}-phase ${\varphi}_2^{{\beta(*)}_2}$. From our numerical results, the characteristics of ${\Gamma}^{\alpha}$ are shown to be significantly different from those of ${\Gamma}^{\beta}$ in the case of high polymers, and this would be the most apparent feature of the adsorption behavior of the polymer at a semi-permeable oil-water interface, which is sensitively dependent on ${\Delta}x_{\rho}$ and r.

• Applied Microscopy
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• 제45권1호
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• pp.9-15
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• 2015

In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국기계가공학회지
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• 제10권4호
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• pp.44-49
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• 2011

The crawler crane, which consists of a lattice boom, a driving system, and movable vehicle, is widely used in a construction site. It needs to be installed an overload limiter to prevent the overturning accident and the fracture of structure. This research is undertaken to provide the relation formula for designing the overload limiter as follows: First the relation formulas between the wire-rope tension and the hoisting load or the overturning ratio according to the luffing angle and length of a lattice boom are established. Secondly the derived formulas are corrected by using the compensated angle considering the deflection of boom through the finite element analysis. The stiffness analysis is carried out for 30-kinds of models as a combination of 6-kinds of luffing angle and 5-kinds of length of boom. Finally the shape design of a stick type load cell, which is the device to measure the wire-rope tension, is performed. 5-kinds of notch radius and 5-kinds of center hole radius are adopted as the design parameter for the strength analysis of the load cell.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• 한국세라믹학회지
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• 제47권6호
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• pp.503-508
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• 2010

$Eu^{2+}$-doped $\beta$-SiAlONs ($Si_{6-z}Al_zO_zN_{8-z}:Eu_y$) are recognized as promising phosphor materials to build an white LED for lighting application due to its excellent absorption/emission efficiency in the long wave length region. In this research, the fabrication of $\beta$-SiAlON:Eu plate phosphor by sintering was investigated with fixed Eu content(y) and varied composition of the host lattice(z). The addition of the activator $Eu_2O_3$ lead to enhanced densification by forming the transient liquid phase. The refinement of a composition by the calculated lattice parameter indicated that the measured composition of the fabricated specimens is nearly same to that of designed one. The single phase $\beta$-SiAlON:Eu plate with relative density of 96.4% was achieved by addition of 2 wt% CaO, which implies the possibility of full densification by adjusting the processing variables.

• 대한자기공명의과학회:학술대회논문집
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• 대한자기공명의과학회 2001년도 제6차 학술대회 초록집
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• pp.112-112
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• 2001

Purpose： We developed the software for diffusion tensor imaging and evaluated its feasibility in norm brains. Method： Five normal volunteers, aged from 25 to 29 years, were examined on a 1.5 T MR system. the diffusion tensor pulse sequence used a SE-EPI with 6 diffusion gradie directions of (1, 1, 0), (-1, 1,0), (1, 0, 1), (-1, 0, 1), (0, 1, 1), (0, 1, -1) and also with no diffusion gradient. A b-factor of 500 sec/mm2 was used. Measurement parameter were as follows； TR/TE=10000 ms/99 ms, FOV=240 mm, matrix=128$\times$128, slice thickness/gap=6 mm/0 mm, bandwidth=91 kHz and the number of total slices=20. Four repeated axial diffusion images were averaged for diffusion tensor imaging. A total scan 11 of 4 min 30 sec was used. Six full diffusion tensor components of Dxx, Dyy, Dzz, Dxy, Dxz and Dyz were obtained using two-point linear regression model from 7 diffusion-weight images at each pixel and fractional anisotropy and lattice index images was estimated fr their eigenvectors and eigenvalues. Our program was written on a platform of IDL. W evaluated the qualities of fractional anisotropy and lattice index images of normal brains a knew whether our software for diffusion tensor imaging may be feasible.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.873-875
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• 1999

We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

• 한국표면공학회지
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• 제20권3호
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• pp.106-117
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• 1987

The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

• 한국초전도ㆍ저온공학회논문지
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• 제20권2호
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• pp.24-28
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• 2018

To understand the effects of Cd substitution for Cu, $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ (x = 0 ~ 0.5) compounds were synthesized and the structural and superconducting properties of the compounds were characterized. Resistivity data revealed that superconducting transition temperature rises initially up to x = 0.25 and then decreases as the Cd doping content increases. Room-temperature thermoelectric power decreases at first up to x = 0.25 and then increases with higher Cd doping content, indicating that the change in $T_c$ is mainly caused by the change in the hole concentration on the superconducting planes by the Cd doping. The non-monotonic dependence of the lattice parameters and the transition temperature with Cd doping content is discussed in connection with the possible formation of $Pb^{+2}$ ions and the removal of excess oxygen caused by Cd substitution in the charge reservoir layer. A correlation between transition temperature and c/a lattice parameter ratio was observed for the $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ system.