• Journal of Information Display
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• v.2 no.3
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• pp.60-65
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• 2001

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1045-1048
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• 2007

We mainly report recent progress in backlight unit (BLU) for liquid crystal display (LCD) using printed carbon nanotubes (CNTs) including top-gate and lateral gate structures. Lighting performances of CNTBLU and longevity of printed CNT emitters are intensively discussed. Selected issues related with field emission display (FED) using the same emitters also are presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.110-110
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• 2000

Cantilever-shaped lateral field emitters were fabricated and their electrical characteristics were tested. As shown in Fig.1, poly-silicon cantilevers were fabricated by the surface micromachining and they were used to the vacuum magnetic field sensors. The tunneling devices were vacuum sealed with the tubeless packaging method, as shown in Fig.2 and Fig.3. The soda-lime glasses were used for better encapsulation, so the sputtered silicon and the glass layers on the soda-lime glasses were bonded together at 1x10$^{-6}$ Torr. The getter was activated after the vacuum sealing fur the stable emissions. The devices were tested outside of the vacuum chamber. Through vacuum packaging, the tunneling sensors can be utilized. Fig.4 shows that the sensor operates with the switching of the magnetic field. When the magnetic field was applied to the device, the anode currents were varied by the Lorentz force. The difference of anode currents can be varied with the strength of the applied magnetic field.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Magazine of the Korean Society of Agricultural Engineers
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• v.31 no.2
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• pp.104-115
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• 1989

In an effort to clarify the wetted patterns of sandy loam soil under trickle irrigation conditions, the distance of wetted zone, infiltration capacity and soil wetted patterns, etc. were measured by gypsum block as soil moisture sensor located every 5 cm vertically and horizontaly in the soil bin under the such conditions as a). irrigation rates set to 2, 4, 6, 8 liters per hour b). total amount of water applied fixed to 14.62 liters per soil bin c) the hearing force of soil measured by plate penetrometer ranging from 1.04 to 1.22kg/cm$_2$ The results can be summarized as follows ; 1. The wetted distance in horizontal direction(H), the wetted distance in vertical direction(D), the horizontal infiltration capacity (iH) and the vertical infiltration capacity(in)could by explained as a function of time t. 2. The horizontal wetted distance (H) is explained by an exponetial function H= a$.$ t where b was found ranging from 021 to 026 under surface trickle irrigation, which was considered a lotlower than the classical value of 0.5 and these measurements were indifferent to the increasing irrigation rates. 3. As for the surface trickle irrigation where horizontal infiltration capacity(iH) is explained as iH = A $.$ t h, the coefficient A increases with respect to irrigation rates within the limits of 0.89~1.34. 4. In terms of surface trickle irrigation of the ratio of Dm Which is maximum vertical wetted distance to Hm, which is maximum horizontal wetted distance, found to be within range of 1.0 to 1.21. It was also noted that the value of Dm decreses when irrigation rates increases while the value of Hm changes the opposite direction. 5. The optimum location of sensors from emitter for surface trickle irrigation should he inside of hemisphere whose lateral radius is 28~30cm long and vertical radius is 10~12cm long. The distance between emitters should be within 60cm long. 6. In the study of vertical wetted distance( D) where D= a $.$ tb, the exponential coefficient b ranged from 0.61 to 0.75 in surface trickle irrigation, and from 0A9 to 0.68 for subsurface trickle irrigation. These measurements showed an increasing tendency to with respect to irrigation rates. 7. In case of vertical infiltration capacity( in), where iD= A $.$ t 1-h, the coefficient A for surface trickle irrigation found to be within range of 0.16 to 0.19 and did not show any relationships with varying degree of irrigation rates. However, the coefficient was varying from 0.09 to 0.22 and showed a tendency to increase vis-a-vis irrigation rates for subsurface trickle irrigation, in contrast. 8. In the observation of subsurface trickle irrigation, it was found that Dm/Hm ratio was within 1.52 to 1.91 and showed a decreasing tendency with respect to increasing rates of irrigation. 9. The location of sensors for subsurface trickle irrigation follows same pattern as above, with vertical distance from emitter being 10~17cm long and horizontal 22~25cm long. The location of emitter should be 50 cm. 10.The relationship between VS which is the volume of wetted soil and Q which is the total amount of water when soil is reached field capacity could be explained as VS= 2.914Q0.91and the irrigation rates showed no impacts on the above relationship.