• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.10-16
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• 2017

This article reports for the first time on the lateral growth of PEO (plasma electrolytic oxidation) films on Al1050 alloy by the application of anodic pulse current in an alkaline electrolyte. Generation of microarcs was observed at the edges initially and then moved towards the central region with PEO treatment time. Disc type PEO film islands with about $20{\mu}m$ diameter were formed first and they grew laterally by the formation of new disc type PEO films at the edge of pre-formed PEO islands. The PEO film islands were found to be interconnected completely and form a continuous PEO film when generation of small size microarcs are terminated at the central part of the specimen, resulting in very smooth surface with low surface roughness less than $1{\mu}m$ of $R_a$. Further PEO treatment after the complete interconnection of PEO films islands showed local thickening of PEO films by vertical growth. It is concluded that very smooth PEO film surface can be obtained by lateral growth mechanism rather than vertical growth of them.

• Journal of Institute of Control, Robotics and Systems
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• v.16 no.7
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• pp.646-654
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• 2010

This paper describes an integrated chassis control for a maneuverability, a lateral stability and a rollover prevention of a vehicle by the using of the ESC and AFS. The integrated chassis control system consists of a supervisor, control algorithms and a coordinator. From the measured and estimation signals, the supervisor determines the vehicle driving situation about the lateral stability and rollover prevention. The control algorithms determine a desired yaw moment for lateral stability and a desired longitudinal force for the rollover prevention. In order to apply the control inputs, the coordinator determines a brake and active front steering inputs optimally based on the current status of the subject vehicle. To improve the reliability and to reduce the operating load of the proposed control algorithms, a multi-core ECU platform is used in this system. For the evaluation of this system, a closed loop simulations with driver-vehicle-controller system were conducted to investigate the performance of the proposed control strategy.

• Structural Engineering and Mechanics
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• v.23 no.5
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• pp.469-486
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• 2006

The main objective of this study was to investigate the seismic behavior of damaged reinforced concrete frames rehabilitated by introducing cast in place reinforced concrete infills. Four bare and five infilled frames were constructed and tested. Each specimen consisted of two (twin) 1/3-scale, one-bay and two-story reinforced concrete frames. Test specimens were tested under reversed-cyclic lateral loading until considerable damage occurred. RC infills were then introduced to the damaged specimens. One bare specimen was infilled without being subjected to any damage. All infilled frames were then tested under reversed-cyclic lateral loading until failure. While some of the test frames were detailed properly according to the current Turkish seismic code, others were built with the common deficiencies observed in existing residential buildings. The variables investigated were the effects of the damage level and deficiencies in the bare frame on the seismic behavior of the infilled frame. The deficiencies in the frame were; low concrete strength, inadequate confinement at member ends, 90 degree hooks in column and beam ties and inadequate length of lapped splices in column longitudinal bars made above the floor levels. Test results revealed that both the lateral strength and lateral stiffness increased significantly with the introduction of reinforced concrete infills even when the frame had the deficiencies mentioned above. The deficiency which affected the behavior of infilled frames most adversely was the presence of lap splices in column longitudinal reinforcement.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.1
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• pp.63-69
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• 2006

New design equations for calculating the lateral-torsional buckling moment resistances of singly stepped I-section beams subjected to general loading on the top flange are suggested based on the investigations of elastic finite-element analyses. The new equations presented in this study are compared with current moment gradient modifiers presented by other researchers and specifications. The study considered almost loading cases on buildings and bridges. The proposed equations should be easily used to calculate the lateral-torsional buckling moment resistance of stepped I-beams.

• Steel and Composite Structures
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• v.19 no.5
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• pp.1203-1219
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• 2015

'Distortional buckling' is one of the predominant buckling types that may occur in a steel-concrete composite box beam (SCCBB) under a negative moment. The key factors, which affect the buckling modes, are the torsional and lateral restraints of the bottom plate of a SCCBB. Therefore, this article investigates the equivalent lateral and torsional restraint rigidity of the bottom plate of a SCCBB under a negative moment; the results of which show a linear coupling relationship between the applied forces and the lateral and/or torsional restraint stiffness, which are not depended on the cross-sectional properties of a SCCBB completely. The mathematical formulas for calculating the lateral and torsional restraint rigidity of the bottom plate can be used to estimate: (1) the critical distortional buckling stress of SCCBBs under a negative moment; and (2) the critical distortional moment of SCCBBs. This article develops an improved calculation method for SCCBBs on an elastic foundation, which takes into account the coupling effect between the applied forces and the lateral and/or torsional restraint rigidity of the bottom plate. This article analyzes the accuracy of the following calculation methods by using 24 examples of SCCBBs: (1) the conventional energy method; (2) the improved calculation method, as it has been derived in this article; and (3) the ANSYS finite element method. The results verify that the improved calculation method, as it has been proved in this article, is more accurate and reliable than that of the current energy method, which has been noted in the references.

• Computers and Concrete
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• v.20 no.6
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• pp.663-670
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• 2017

The post-tensioned (PT) flat plate slab system is commonly used in practice, and this simple and fast construction method is also considered to be a very efficient method because it can provide excellent deflection and crack control performance under a service load condition and consequently can be advantageous when applying to long-span structures. However, a detailed design guideline for evaluating the lateral behavior of the PT flat plate slab system is not available in current design codes. Thus, typical design methods used for conventional reinforced concrete (RC) flat plate slab structures have inevitably been adopted in practice for the lateral load design of PT flat plate structures. In the authors' previous studies, the unified equivalent frame method (UEFM) was proposed, which considers the combined effect of gravity and lateral loads for the lateral behavior analysis of RC flat plate slab structures. The aim of this study is to extend the concept of the UEFM to the lateral analysis of PT flat plate slab structures. In addition, the stiffness reduction factors of torsional members on interior and exterior equivalent frames were newly introduced considering the effect of post-tensioning. Test results of various PT flat plate slab-column connection specimens were collected from literature, and compared to the analysis results estimated by the extended UEFM.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.307-309
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• 2009

We have fabricated vertical-type organic transistors (static induction transistors; SITs) with built-in nano-triode arrays formed in parallel by a colloidal-lithography technique. Using this technique, we could fabricate a microstructure in a lateral direction within a large-scale organic device without relying on photolithography. The organic transistor showed low operating voltages, high current output, and large transconductance.

• International journal of advanced smart convergence
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• v.11 no.2
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• pp.59-63
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• 2022

In this study, we study of luminescent solar concentrators comprise thick glass with broadband antireflection coating deposited on the top surfaces and inorganic phosphor layers contacted on the bottom surfaces. Solar cells are contacted to the lateral surfaces of the glass. Experimental results show the broadband antireflection coating increased the short-circuit current of the solar cell.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.116-119
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• 2000

A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body.