• Journal of the Computational Structural Engineering Institute of Korea
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• v.17 no.2
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• pp.183-192
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• 2004

New dynamic analysis procedures lot the vertically drilled sea water pile are suggested and demonstrated by the typical design Problem. Pile structure submerged in the sea water as well as forces by the ocean waves and tidal currents are modeled and formulated by finite element method. To obtain wave forces for the finite element equation, Airy's wave theory is tested and selected among others. Lateral lifting forces induced by the vortex shedding of current flow is simply based on the harmonic function with the Strouhal frequency and lifting coefficient. Natural frequencies and frequency responses for the pile are calculated by NASTRAN using the results of the formulation. Dynamic displacement and stress results obtained by these procedures are shown to be applicable to predict the dynamic behaviors of the ocean pile by the wave and lifting forces as a preliminary design analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.69.2-69.2
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• 2019

To construct a coronal force-free magnetic field, we must impose the boundary normal current density (or three components of magnetic field) as well as the boundary normal field at the photosphere as boundary conditions. The only method that is known to implement these boundary conditions exactly is the method devised by Grad and Rubin (1958). However, the Grad-Rubin method and all its variations (including the fluxon method) suffer from convergence problems. The magnetofrictional method and its variations are more robust than the Grad-Rubin method in that they at least produce a certain solution irrespective of whether the global solution is compatible with the imposed boundary conditions. More than often, the influence of the boundary conditions does not reach beyond one or two grid planes next to the boundary. We have found that the 2D solenoidal gauge condition for vector potentials allows us to implement the required boundary conditions easily and effectively. The 2D solenoidal condition is translated into one scalar function. Thus, we need two scalar functions to describe the magnetic field. This description is quite similar to the Chandrasekhar-Kendall representation, but there is a significant difference between them. In the latter, the toroidal field has both Laplacian and divergence terms while in ours, it has only a 2D Laplacian term. The toroidal current density is also expressed by a 2D Laplacian. Thus, the implementation of boundary normal field and current are straightforward and their effect can permeate through the whole computational domain. In this paper, we will give detailed math involved in this formulation and discuss possible lateral and top boundary conditions and their meanings.

• Journal of the Korea Concrete Institute
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• v.15 no.5
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• pp.705-714
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• 2003

Even though Korean peninsula is located in regions of moderate seismic risks, current seismic design provisions of the roadway bridge design code have adopted the AASHTO code which is based on the requirements for high seismic regions. The objective of this research is to investigate the seismic performance of circular reinforced concrete (RC) bridge piers with limited ductility, which may be desirable in low or moderate seismic regions, such as in Korea. Four test specimens were designed and constructed. The reference specimen was designed with longitudinal steel ratio as 1.01% and the confinement reinforcement ratio as 0.13% without considering earthquake, and three other test specimens were designed in accordance with a limited-ductility concept as 0.3% for the confinement steel ratio. This confinement ratio is 0.32 times of minimum lateral reinforcement specified in current seismic design provisions, and 2.3 times of lateral reinforcement required in nonseismic design provisions. The pseudo-dynamic test was carried out to evaluate the seismic performance of full-scale specimens in size of 1.2m diameter and 4.8m height. Judging from the experiment, the reference specimen was not satisfactory for the demand displacement ductility ${\mu}$=5.0, but three limited-ductility specimens appeared to have the displacement ductility of more than 5.

• Annals of Laboratory Medicine
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• v.38 no.6
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• pp.578-584
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• 2018

Background: Accurate, rapid, and cost-effective screening tests for hepatitis B virus (HBV) and hepatitis C virus (HCV) infection may be useful in laboratories that cannot afford automated chemiluminescent immunoassays (CLIAs). We evaluated the diagnostic performance of a novel rapid automated fluorescent lateral flow immunoassay (LFIA). Methods: A fluorescent LFIA using a small bench-top fluorescence reader, Automated Fluorescent Immunoassay System (AFIAS; Boditech Med Inc., Chuncheon, Korea), was developed for qualitative detection of hepatitis B surface antigen (HBsAg), antibody to HBsAg (anti-HBs), and antibody to HCV (anti-HCV) within 20 minutes. We compared the diagnostic performance of AFIAS with that of automated CLIAs-Elecsys (Roche Diagnostics GmbH, Penzberg, Germany) and ARCHITECT (Abbott Laboratories, Abbott Park, IL, USA)-using 20 seroconversion panels and 3,500 clinical serum samples. Results: Evaluation with the seroconversion panels demonstrated that AFIAS had adequate sensitivity for HBsAg and anti-HCV detection. From the clinical samples, AFIAS sensitivity and specificity were 99.8% and 99.3% for the HBsAg test, 100.0% and 100.0% for the anti-HBs test, and 98.8% and 99.1% for the anti-HCV test, respectively. Its agreement rates with the Elecsys HBsAg, anti-HBs, and anti-HCV detection assays were 99.4%, 100.0%, and 99.0%, respectively. AFIAS detected all samples with HBsAg genotypes A-F and H and anti-HCV genotypes 1, 1a, 1b, 2a, 2b, 4, and 6. Cross-reactivity with other infections was not observed. Conclusions: The AFIAS HBsAg, anti-HBs, and anti-HCV tests demonstrated diagnostic performance equivalent to current automated CLIAs. AFIAS could be used for a large-scale HBV or HCV screening in low-resource laboratories or low-to middle-income areas.

• Journal of the Korean Society of Radiology
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• v.15 no.7
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• pp.1041-1047
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• 2021

In this study, the effective dose for frequently general radiography among the diagnostic reference level (DRL) for examinations provided by the government in Korea was evaluated using the Monte Carlo N-Particle eXtended (MCNPX) simulation tool. We were selected to evaluate for a total of 5 examination sites which included head anterior-posterior, chest (posterior-anterior, lateral), abdomen anterior-posterior and pelvis anterior-posterior. Physical conditions such as tube voltage and tube current used in MCNPX simulation were used in domestic conditions of the Korea Disease Control and Prevention Agency (KDCA). To evaluate domestic medical radiation exposure, we used the HDRK-Man computerized human phantom manufactured based on the international standard ICRP 103 that was applied to the MCNPX simulation. The phantom could represent the standard body shape of Koreans. As a results, the effective dose corresponding to the DRL based on adult males of head anterior-posterior position was 0.086 mSv, chest posterior-anterior position was 0.05 mSv, chest lateral was 0.354 mSv, abdomen anterior-posterior position was 0.548 mSv, and pelvis anterior-posterior position was 0.451 mSv.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Archives of Plastic Surgery
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• v.43 no.6
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• pp.564-569
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• 2016

Background Alar retraction is a challenging condition in rhinoplasty marked by exaggerated nostril exposure and awkwardness. Although various methods for correcting alar retraction have been introduced, none is without drawbacks. Herein, we report a simple procedure that is both effective and safe for correcting alar retraction using only conchal cartilage grafting. Methods Between August 2007 and August 2009, 18 patients underwent conchal cartilage extension grafting to correct alar retraction. Conchal cartilage extension grafts were fixed to the caudal margins of the lateral crura and covered with vestibular skin advancement flaps. Preoperative and postoperative photographs were reviewed and analyzed. Patient satisfaction was surveyed and categorized into 4 groups (very satisfied, satisfied, moderate, or unsatisfied). Results According to the survey, 8 patients were very satisfied, 9 were satisfied, and 1 considered the outcome moderate, resulting in satisfaction for most patients. The average distance from the alar rim to the long axis of the nostril was reduced by 1.4 mm (3.6 to 2.2 mm). There were no complications, except in 2 cases with palpable cartilage step-off that resolved without any aesthetic problems. Conclusions Conchal cartilage alar extension graft is a simple, effective method of correcting alar retraction that can be combined with aesthetic rhinoplasty conveniently, utilizing conchal cartilage, which is the most similar cartilage to alar cartilage, and requiring a lesser volume of cartilage harvest compared to previously devised methods. However, the current procedure lacks efficacy for severe alar retraction and a longer follow-up period may be required to substantiate the enduring efficacy of the current procedure.

• Journal of the Korean Geotechnical Society
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• v.18 no.4
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• pp.7-19
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• 2002

This paper presents the results of an investigation on the effect of foundation stiffness on the performance of soil-reinforced segmental retaining walls (SRWalls). Laboratory model tests were performed using a reduced-scale physical model to capture the fundamentals of the manner in which the foundation stiffness affects the behavior of SRWalls. A series of finite-element analyses were additionally performed on a prototype wall in order to supplement the findings from the model tests and to examine full-scale behavior of SRWalls encountered in the field. The results of the present investigation indicate that lateral wall displacements significantly increase with the decrease of the foundation stiffness. Also revealed is that the increase in wall displacements is likely to be caused by the rigid body movement of the reinforced soil mass with negligible internal deformation within the reinforced soil mass. The findings from this study support the current design approaches, in which the problem concerning the foundation condition are treated in the frame work of the external stability rather than the internal stability. The implications of the findings from this study to current design approaches are discussed in detail.