• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.287.1-287.1
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• 2014

본 연구에서는 현재 디스플레이에서 가장 널리 이용되는 저온 polycrystalline silicon (poly-Si)의 결정화 방법에 따른 thin-film transistor (TFT)의 전기적 특성을 분석하였다. 분석에 이용된 결정화 방식은 Excimer Laser Annealing (ELA)와 Metal Induced Crystallization (MIC)이다. ELA와 MIC TFTs의 전기적 특성 측정을 통한 분석결과 ELA와 MIC poly-Si TFTs의 전기적 특성 [field-effect mobility (${\mu}_{FE}$), on/off current ratio ($I_{ON}/I_{OFF}$), sub-threshold swing (SS)]은 큰 차이는 없지만, ELA를 이용한 poly-Si TFT의 전기적 특성이 조금 우수하다. 하지만, MIC poly-Si TFT의 경우 threshold voltage ($V_{TH}$)가 0V에 보다 가까울 뿐만 아니라, 전기적 스트레스를 통한 신뢰성 확인 시 ELA poly-Si TFT보다 조금 더 안정적이다. 이는 ELA의 경우 좁은 면에 선형 레이저 빔으로 조사하면서 생기는 hill-lock의 영향으로 표면이 거칠고 균일하지 못하여 바이어스 인가시 생기는 문제이다. 또한 MIC는 금속 촉매를 이용해 결정립 경계를 확장하고 결정 크기를 키워 대면적화에 유리하다. Thermal Stress에서는 (from 293K to 373K) TFT에 점차 높은 온도를 가하자 MIC poly-Si TFT의 경우 off 상태에서 누설 전류 값이 증가하며 열에 민감한 반응을 보이는 것을 확인하였다.

• Journal of Magnetics
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• v.2 no.4
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• pp.147-156
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• 1997

An artificially modulated magnetic Co/Pd multilayer is one of the promising candidates for high density magneto-optic (MO) recording media, due to a large Kerr rotation angle in the wavelength of a blue laser beam. However, since multilayer structure, as well as amorphous structure, is a non-equilibrium state in terms of free energy and a MO recording technology is a kind of thermal recording which is conducted around Curie temperature (Tc) of the recording media, when the Co/Pd mulilayer is used for the MO recording media, changes in the magnetic properties are occurred as the amorphous structure do. Therefore, the assessment of the magnetic properties in the Co/Pd multilayer during interdiffusion is crucially important both for basic research and applications. As the parameter of the magnetic properties in this research, saturation magnetization and perpendicular magnetic anisotropy energy of the Co/Pd multilayer are measured in terms of Ar sputtering pressure and heat treatment temperature. Form the results of the research, we find out that the magnetic exchange energy between Co and Pd sublayers strongly affects the changes in the magnetic properties of the Co/Pd multilayers during the interdiffusion in ferromagnetic state. This discovery will provide the understanding of the magnetic exchange energy in the Co/Pd multilayer structure and suggest the operating temperature range for MO recording in the Co/Pd multilayer for the basic research and applications, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.216-217
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• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.6-12
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• 2004

Diffraction Bragg gratings consisting of metal (silver) nanoparticles are generated inside a soda-lime glass substrate. After ion-exchanging and annealing processes in the glass, the silver nanoparticles are first formed with the particle diameters of 10 nm ∼ 30 nm. By interfering two CW laser beams at ∼ 60 ${\mu}{\textrm}{m}$ deep under the surface of the nanoparticles-dispersed glass, Bragg gratings with thickness of 15 ${\mu}{\textrm}{m}$ and period of 3.5 ${\mu}{\textrm}{m}$ are generated. Diffraction efficiency of the gratings formed by two TE-polarized beams is three times higher than that by two TM-polarized beams. From this polarization dependence, we have found that strong coupling of the surface plasmons induced on the metal particles may contribute dominantly to generate the diffraction grating.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.67-69
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• 2003

The magnetic properties of single- and poly-crystalline $La_{0.7}Sr_{0.3}MnO_3/Pr_{0.65}Ca_{0.35}MnO_3$ multilayered (ML) films, and composite (CP) $(La_{0.7}Sr_{0.3})_{0.5}(Pr_{0.65}Ca_{0.35}_{0.5}MnO_3$ films, prepared by laser ablation, have been investigated in a wide temperature range. It was shown that the transformation from an incoherent to a coherent interface in the ML films leads to an enhancement of the ferromagnetic coupling between layers and to a single-phase magnetic transition. The amorphous CP films demonstrate a paramagnetic behavior of the magnetization with a sharp peak at $T_{G}\approx$45 K, which was interpreted as the formation of Griffiths phase. A short-term annealing at $750^{\circ}C$ induced the complete crystallization of film, and a recovery of the ferromagnetic and the metal-insulator transitions.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.248-250
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• 2009

고효율 태양전지를 위한 결정질 태양전지의 구조 중 UNSW에서 개발한 BCSC(buried contact solar cell)가 있는데, 이는 전면 전극을 laser 처리 후 무전해 니켈 도금으로 형성한 것이다. 이같은 전면 전극을 형성하기 위해서는 무전해 nickel 도금 후 열처리가 필수적이다. 우리는 이 공정을 확립하기 위해 결정질 wafer에 후면을 PECVD로 SiNx막을 형성하여 $30\Omega/\square$로 도핑한 후 후면을 불산으로 제거한 상태에서 양면을 니켈 무전해 도금으로 전극을 형성하여 $300^{\circ}C,\;350^{\circ}C,\;400^{\circ}C$에서 각각 3,6,9분간 진행하였다. 그 결과 $400^{\circ}C$에서 3분간 열처리된 sample이 상대적으로 가장 명확한 IV curve를 형성하였다. 이 실험의 결과는 PN 접합 구조에서 전극을 nickel로 사용할 때 유용하게 사용될 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.320-320
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• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.34-39
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• 2018

In this study, e-beam equipment was used to form silver nanoparticles on thin films of $TiO_2$ to increase the efficiency of dye-sensitized solar cells and improve the annealing process. $TiO_2$ thin films with nanoparticle photoelectrodes were fabricated in individual units for use in dye-sensitized solar cells. The characteristics of dye-sensitized solar cells were compared to those of the prepared $TiO_2$ photoelectrode with and without nanoparticles. The dye-sensitized solar cells with silver nanoparticles showed a significant increase in the electric current density compared with the pure $TiO_2$ dye-sensitized solar cell and improved the solar conversion efficiency to 27.89%. The increased density of electric current increased the extent of light absorption of the dye owing to the plasmon resonance of the nanoparticles at the local surfaces. This phenomenon led to increased light scattering, which in turn increased the current density of the dye-sensitized solar cells and improved the solar conversion efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.