• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.89-90
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• 2008

본 연구에서는 PECVD(Plasma Enhanced CVD) 에서 사용하는 유해 가스인 $SiH_4$ 대신에 유기 사일렌 반응 물질인 TEOS(Tetraethyl Orthosilicate, Si$(OC_2H_5)_4)$를 이용하여 상압 화학 기상 증착법 (Atmospheric Pressure CVD, APCVD)으로 실리콘 산화막을 증착하고 박막의 조성과 특성 및 화학적, 전기적 특성들을 살펴보았다. TEOS 반응원료를 이용한 CVD 공정에서 공정 온도를 낮추기 위한 방법으로 강력한 산화제인 오존을 이용하여 공정온도를 $400^{\circ}C$이하로 낮췄으며, 유리기판 상의 ELA(Excimer Laser Annealing)처리된 다결정 실리콘 기판에 트랜지스터 소자를 제작하고, 게이트 절연막으로의 전기적 특성을 살펴보았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.15-16
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• 2008

We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집B
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• pp.278-284
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• 2000

The method of Impinging jet was applied lots of part in industrial field as a cooling of as gas turbine blade, a annealing of metal and plastic sheets, drying of textile, veneer paper, X-ray medical devices, laser weapons and electronic components. This study's main factor is reciprocating Jet impingement perpendicular to the heated Surface. We researched the effect of heat transfer and enhancement with pulsating air jet. The pulsating air jet has an improvement in pulsating Frequencies((f= 0.5, 1, 1.5, 3Hz) and nozzle-to-plate distances($l/d=\;2{\sim}4,\;6{\sim}8,\;4{\sim}6,\;8{\sim}10$).

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 2009년도 IWAIT
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• pp.638-643
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• 2009

A computer-generated hologram(CGH) is made for three-dimensional image reconstruction of a virtual object which is a difficult to irradiate the laser light directly. One of the adverse effect factors is quantization of wave front computed by program when a computer-generated hologram is made. Amplitude element is not considered in Kinoform, it needs processing to reduce noise or false image. So several investigation was reported that the improvement of reconstructed image of Kinoform. Means to calculate the most suitable complex amplitude distribution are iterative algorithm, simulated annealing algorithm and genetic Algorithm. Error diffusion method reconstructed to separate the object as for the noise that originated in the quantization error. So it is efficient method to obtain high quality image with not many processing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1400-1402
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• 2002

금속유도 측면 결정화 (Metal Induced Lateral Crystallization; MILC)를 통하여 형성한 다결정 실리콘 박막에 엑시머 (excimer) 레이저를 조사하여 우수한 특성을 갖는 박막 트랜지스터를 제작하였다. MILC 공정 중에 형성되는 금속 유도 결정화 (Metal Induced Crystallization; MIC) 실리콘 박막은 다량의 Ni을 함유하고 있기 때문에, 이에 인접한 MILC 실리콘 박막 내에는 니켈 농도의 점진적인 차이가 발생한다. MILC 다결정 실리콘 박막 내의 Ni 농도 차이는 실리콘 박막의 용융점 차이를 유발하여 레이저 결정화 시에 매우 큰 실리콘 결정립의 성장을 유도한다. 새로운 다결정 실리콘 박막 트랜지스터는 기존의 레이저 결정화 방식으로 제작한 다결정 실리콘 박막 트랜지스터에 비하여 40% 향상된 전계효과 이동도를 나타내었다.

• 한국진공학회지
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• 제1권1호
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• pp.212-222
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• 1992

To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.356-356
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• 2013

Monolithic 3D-IC는 현대 집적회로에서 interconnect로 인해 발생되는 여러 문제들을 해결하기 위해 새롭게 제시되고 있는 기술적 개념으로 구현 시 하위 소자 및 interconnet들에 영향을 주지 않는 저온공정이 필수적이다. 특히 germanium (Ge)은 낮은 녹는점 및 높은 캐리어 이동도 덕분에 3D-IC 구현 시 상위 소자의 channel 물질에 적합한 것으로 알려져 있다. 최근 이러한 Ge을 결정화하기 위해 solid phase crystallization (SPC), metal induced crystallization (MIC), laser annealing과 같은 결정화 방법들이 보고되고 있다. 현재까지 SPC 방법에 의해 얻어진 poly-Ge의 도핑농도 및 이동도와 같은 전기적 특성에 대한 분석은 수행된 바 있으나 3D-IC 공정에 적용이 가능한 MIC 기술을 통해 얻어진 poly Ge 필름에 대한 전기적 특성분석은 부족한 상황이다. 본 연구는 SPC 뿐만 아니라 MIC 방법을 통해 ${\alpha}$-Ge를 결정화시키고 얻어진 poly-Ge 필름의 전기적 특성을 XRD 및 hall effect measurement를 통해 분석하였다. 특히 일반적으로 Ge 내에서 p-type dopant로 동작을 하는 defect과 n-type dopant인 phosphorus 관계를 고려하여 여러 온도에서 SPC 및 MIC에 의해 얻어진 phosphorus doped poly-Ge 필름들의 전기적 특성을 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.476-479
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• 2000

In this study, mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that a mesh was attached to the substrate holding electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied dias. Applied DC bias enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom. The structural properties of poly-Si films were analyzed by scanning electron microscopy(SEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.34-38
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• 1997

The linear dichroism in obliquely deposited amorphous As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin films has been studied using a sub-bandgap exposure by He-Ne laser. As increasing the deposition angle, the magnitude of 야chroism in as-deposited thin films was enhanced to about 10%, while that of the films annealed abode T$_{g}$ before illumination was nut enhanced at all.l.l.l.l.