• 제목/요약/키워드: laser photolithography

검색결과 57건 처리시간 0.023초

UV 레이저 응용 반도체 기판용 임베디드 회로 패턴 가공 (Fabrication of embedded circuit patterns for Ie substrates using UV laser)

  • 손현기;신동식;최지연
    • 한국레이저가공학회지
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    • 제14권1호
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    • pp.14-18
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    • 2011
  • Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

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펨토초레이저와 자기조립박막을 이용한 나노스케일 패터닝 (Nanoscale Patterning Using Femtosecond Laser and Self-assembled Monolayers (SAMs))

  • 장원석;최무진;김재구;조성학;황경현
    • 대한기계학회논문집A
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    • 제28권9호
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    • pp.1270-1275
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    • 2004
  • Standard positive photoresist techniques were adapted to generate nano-scale patterns of gold substrate using self-assembled monolayers (SAMs) and femtosecond laser. SAMs formed by the adsorption of alkanethiols onto gold substrate are employed as very thin photoresists, Alkanethiolates formed by the adsorption of alkanethiols are oxidized on exposure to UV light in the presence of air to alkylsulfonates. Specifically, it is known that deep UV light of wavelength less than 200nm is necessary for oxidation to occur. In this study, ultrafast laser of wavelength 800nm and pulse width 200fs is applied for photolithography. Results show that ultrafast laser of visible range wavelength can replace deep UV laser source for photo patterning using thin organic films. Femtosecond laser coupled near-field scanning optical microscopy facilitates not only the patterning of surface chemical structure, but also the creation of three-dimensional nano-scale structures by combination with suitable etching methods.

레이저 어블레이션에 의한 초전도 이중모드 공진기 제작 (Fabrication of Superconducting Dual Mode Resonator using Laser Ablation)

  • 박주형;양승호;이상렬;안달;석중현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.41-44
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    • 1998
  • Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.

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포토리소그래피를 통한 광통신용 실리콘 렌즈 제작 및 특성 연구 (Research on Fabrication of Silicon Lens for Optical Communication by Photolithography Process)

  • 박준성;이대장;노호균;김성근;허재영;류상완;강성주;하준석
    • 마이크로전자및패키징학회지
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    • 제25권2호
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    • pp.35-39
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    • 2018
  • 광결합 효율(Fiber coupling efficiency)을 개선하기 위해서는 Laser diode에서 넓은 각도로 방출된 빛을 광섬유의 중심(Core) 부분으로 모아주는 집광렌즈(Collimating lens)가 필수적이다. 현재 사용되는 집광렌즈는 형틀(Mold)을 이용한 글래스 몰드(Glass mold) 공법이 널리 사용되고 있다. 이 방식은 생산단가가 저렴하지만, 정교한 성형이 어렵고 구면수차와 같은 품질문제가 있다. 본 연구는 기존의 글래스 몰드 공법을 반도체 공정으로 대체함으로써 표면 가공의 정밀도를 높이고, 렌즈의 재질 또한 반도체 공정에 적합한 실리콘으로 변경하였다. 반도체공정은 PR을 이용한 포토리소그래피(Photolithography) 공정과 플라즈마를 이용한 건식 식각(Dry etching) 공정으로 구성된다. 광결합 효율은 실리콘 렌즈의 광학적 특성을 평가하기 위해 초정밀 정렬 시스템을 사용하여 측정되었다. 그 결과, 렌즈 직경 $220{\mu}m$ 일 때의 최대 광결합 효율은 50%로 측정되었고, 렌즈 직경 $210-240{\mu}m$ 범위에서는 최고 광결합 효율 대비 5% 이하의 광결합 특성저하를 보여줌을 확인하였다.

Recent development of polymer optical circuits for the next generation fiber to the home system

  • Kaino, Toshikuni
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.13-14
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    • 2006
  • The use of soft-lithography instead of standard photolithography and dry etching technologies is attractive because inexpensive optical device can be realized. Polymerization using multi-photon absorption of materials is also a good method for optical waveguide fabrication. Laser induced self-writing technology of optical waveguide is also very simple and attractive. Using these processes, we can fabricate and interconnect optical circuits at once. In this presentation, several simple fabrication methods will be introduced. New optical loss evaluation method for polymer optical waveguides will also be presented

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Improvement in Electrical Stability of poly-Si TFT Employing Vertical a-Si Offsets

  • Park, J.W.;Park, K.C.;Han, M.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.67-68
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    • 2000
  • Polycrystalline silicon (poly-Si) thin film transistors (TFT's) employing vertical amorphous silicon (a-Si) offsets have been fabricated without additional photolithography processes. The a-Si offset has been formed utilizing the poly-Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a-Si. The ON current degradation of the new device after 4 hour's electrical stress was reduced by 5 times compared with conventional poly-Si TFT's.

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나노물질의 선택적 레이저소결을 이용한 유연전기소자 구현 연구현황 (Status of Research on Selective Laser Sintering of Nanomaterials for Flexible Electronics Fabrication)

  • 고승환
    • 대한기계학회논문집B
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    • 제35권5호
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    • pp.533-538
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    • 2011
  • 대부분의 유연전기소자는 플라스틱, 옷감, 종이와 같이 고온에 민감한 물질이기 때문에 열에 민감한 기판 위에 금속을 증착하고 패터닝할 수 있는 저온 공정의 개발이 필요하다. 최근 기존의 광식각과 진공증착 방법을 이용하지 않고 액상으로 금속 나노입자의 박막을 형성하고 선택적 레이저 소결을 이용하여 플라스틱에 열적손상을 최소화하고 고해상도의 금속 패터닝을 방법이 많은 연구가 활발히 진행되고 있다. 본 논문에서는 본 연구실에서 활발히 수행중인 나노물질의 선택적 레이저소결법을 이용하여 유연 디스플레이와 유연태양전지와 같은 유연전기소자의 개발 동향에 대해 알아보고 앞으로의 발전방향에 대해 논의한다.

MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작 (The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD)

  • 김정진;강명구;김용;엄경숙;민석기;오환술
    • 전자공학회논문지A
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    • 제29A권9호
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    • pp.36-45
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    • 1992
  • The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

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펄스 레이저 증착법에 의한 YBCO 박막증착과 이중모드 공진기의 제작 (Fabrication of Novel Dual Mode Resonator Using Superconducting Thin Film Grown by Pulsed Laser Deposition)

  • 박주형;이상렬;안달
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1546-1548
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    • 1998
  • Dual mode ring resonators(DMRR) have been fabricated using laser ablated $YBa_2Cu_3O_{7-x}$ superconducting thin films. The transition temperature of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. Dual mode ring resonators were patterned by standard photolithography process and wet-etching. Then two-layer metal thin films (Ti/Ag) have been deposited for the ground plane on the back side of substrate by e-beam and thermal evaporation. The input/output feedline angles of each resonator were $60^{\circ}$, $100^{\circ}$, $180^{\circ}$. A network analyzer was used for testing the performance of the resonators in the frequency range of 6-13 GHz at 77 K.

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$Co_2$ 레이저 열처리에 의한 SOI 구조에서의 다결정 실리콘의 재결정화 (The Recrystallization of Polysilicon in SOI by $Co_2$ Laser Annealing)

  • 오민록;안철
    • 대한전자공학회논문지
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    • 제24권6호
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    • pp.975-979
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    • 1987
  • The recrystallization of polysilicon layer deposited on SiO2 was attempted by means of CO2 laser annealing in this paper. SiO2 layer of 13000\ulcornerthick and polysilicon layer of 6000\ulcornerthick were successively deposited on (100) Si wafer by thermal oxidation and LPCVD, respectively. Prior to the annealings the polysilicon layer was defined in small island patterns by means of photolithography. After the annealing an increase in grain size from 1000\ulcornerto 2-10 =\ulcorner was observed by SEM.

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