• 센서학회지
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• 제15권1호
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• 한국분말재료학회지
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• 제9권4호
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• pp.267-272
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• 2002

The production of micro components is one of the leading technologies in the fields of information and communiation, medical and biotechnology, and micro sensor and micro actuator system. Microfabrication (micromachining) techniques such as X-ray lithography, electroforming, micromolding and excimer laser ablation are used for the production of micro components out of silicon, polymer and a limited number of pure metals or binary alloys. However, since the first development of microfabrication technologies there have been demands for the cost-effective replication in large scale series as well as the extended range of available material. One such promising process is micro powder injection molding (PIM), which inherits the advantages of the conventional PIM technology, such as low production cost, shape complexity, applicability to many materials, applicability to many materials, and good tolerance. This paper reports on a fundamental investigation of the application of W-Cu powder to micro metal injection molding (MIM), especially in view of achieving a good filling and a safe removal of a micro mold conducted in the experiment. It is absolutely legitimate and meaningful, at the present state of the technique, to continue developing the micro MIM towards production processes for micro components.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.65-70
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• 2023

나노임프린트 리소그래피(Nanoimprint lithography, NIL) 공정은 패턴 형성을 위한 공정 단순성, 우수한 패턴 형성, 공정의 확장성, 높은 생산성 및 저렴한 공정 비용이라는 이유들로 인해 많은 관심을 받고 있다. 그러나, 기존의 NIL 기술들을 통해 금속 소재 상 구현할 수 있는 패턴의 크기는 일반적으로 마이크로 수준으로 제한적이다. 본 연구에서는, 다양한 두께의 금속 기판 표면에 마이크로/나노 스케일 패턴을 직접적으로 형성하기 위한 극압 임프린트 리소그래피(extremepressure imprint lithography, EPIL) 방법을 소개하고자 한다. EPIL 공정은 자외선, 레이저, 임프린트 레지스트 또는 전기적 펄스 등의 외부 요인을 사용하지 않고 고분자, 금속, 세라믹과 같은 다양한 재료의 표면에 신뢰성 있는 나노 수준의 패터닝을 가능하게 한다. 레이저 미세가공 및 포토리소그래피로 제작된 마이크로/나노 몰드는 상온에서 높은 하중 혹은 압력을 가해 정밀한 소성변형 기반 Al 기판의 나노 패터닝에 활용된다. 20 ㎛ 부터 100 ㎛까지 다양한 두께를 갖는 Al 기판 상 마이크로/나노 스케일의 패턴 형성을 보여주고자 한다. 또한, 다목적 EPIL 기술을 통해 금속 재료 표면에서 그 형상을 제어하는 방법 역시 실험적으로 증명된다. 임프린트 리소그래피 기반 본 접근법은 복잡한 형상이 포함된 금속 재료의 표면을 요구하는 다양한 소자 응용을 위한 나노 제조 방법에 적용될 수 있을 것으로 기대한다.