• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.15-18
• /
• 2005

As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.05a
• /
• pp.82-85
• /
• 2006

As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.3
• /
• pp.35-38
• /
• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1115-1117
• /
• 2009

Resist patterning of all layers in TFT and BM layer in CF were carried out using UV-imprinting Lithography to make a 12.1 inch TFT-LCD panel at the resolution of 1280 ${\times}$ 800 lines (125 ppi). Technical challenges and solutions for resist patterning by UV-imprinting are shown in this article.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.871-877
• /
• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.317-320
• /
• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1815-1817
• /
• 2000

Plasma display Panels(PDPs) are one of the leading technologies currently under development for large-area high-brightness flat panel displays. However, the luminance and luminous efficiency of at PDPs should be improved. Especially, one of the main factors affecting on the luminance and luminous efficiency of ac PDP may be the phosphor thickness and size of discharge space. In this study, we examined into addressing time, electrical and optical properties as a parameter of the phosphor thickness and the size of discharge space during the display period of ac PDP. It is found out that the optimum phosphor thickness was $50{\mu}m$ and height of discharge space was about $100{\mu}m$.

• Journal of Information Display
• /
• v.5 no.2
• /
• pp.23-26
• /
• 2004

For high end, large area displays, all current LC modes require some degree of optical compensation to improve the front of screen viewing experience. Currently most optical films are laminated to the outside of the LCD cell, between the glass and polariser. In this paper we wish to show how it is possible to integrate the compensating optical film within a VA mode LCD cell. The paper will describe the process of making the biaxial film through the process of in-situ photopolymerisation of an aligned film of reactive mesogens in the cholesteric phase using polarised UV light. The film can be made on the colour filter array side of the LCD panel. In addition the process of fabricating a VA mode LCD containing this film will be described and the performance of this module will be presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.71-74
• /
• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Computers and Concrete
• /
• v.24 no.3
• /
• pp.223-236
• /
• 2019

Experience of previous earthquakes shows that a considerable portion of concrete precast buildings sustain relatively large damages especially at the beam-column joints where the damages are mostly caused by bar slippage. Precast concrete buildings have a kind of discontinuity in their beam-column joints, so reinforcement details in this area is too important and have a significant effect on the seismic behavior of these structures. In this study, a relatively simple and efficient nonlinear model is proposed to simulate pre- and post-elastic behavior of the joints in usual practice of precast concrete building. In this model, beam and column components are represented by linear elastic elements, dimensions of the joint panel are defined by rigid elements, and effect of slip is taken into account by a nonlinear rotational spring at the end of the beam. The proposed method is validated by experimental results for both internal and external joints. In addition, the seismic behavior of the precast building damaged during Bojnord earthquake 13 May 2017, is investigated by using the proposed model for the beam-column joints. Damage unexpectedly inducing the precast building in the moderate Bojnord earthquake may confirm that bearing capacity of the precast building was underestimated without consideration of joint behavior effect.