• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.220-220
• /
• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Current Optics and Photonics
• /
• 제2권2호
• /
• pp.153-164
• /
• 2018

In semiconductor manufacturing, critical dimensions indicate the features of patterns formed by the semiconductor process. The purpose of measuring critical dimensions is to confirm whether patterns are made as intended. The deposition process for an organic light emitting diode (OLED) forms a luminous organic layer on the thin-film transistor electrode. The position of this organic layer greatly affects the luminescent performance of an OLED. Thus, a system for measuring the position of the organic layer from outside of the vacuum chamber in real-time is desired for monitoring the deposition process. Typically, imaging from large stand-off distances results in low spatial resolution because of diffraction blur, and it is difficult to attain an adequate industrial-level measurement. The proposed method offers a new superresolution single-image using a conversion formula between two different optical systems obtained by a deep learning technique. This formula converts an image measured at long distance and with low-resolution optics into one image as if it were measured with high-resolution optics. The performance of this method is evaluated with various samples in terms of spatial resolution and measurement performance.

• 한국지열·수열에너지학회논문집
• /
• 제18권1호
• /
• pp.12-19
• /
• 2022

Desalination has the advantage of being easy to supply water resources. However most desalination devices are developed mainly for large plants and it is not common to use desalination system for a small fishing ship. More than 50% of the input fuel energy of the small shipbuilding's engine is wasted without reused in a ship, and it is necessary to improving the fuel efficiency of the small fishing ship. In this study, a desalination device using waste heat from engine of the ships was developed. As results, it was found that if the condensing chamber uses a fan to circulate the water vapor, the freshwater production was up to 40.0% higher, and the freshwater production efficiency was up to 30.1% increased when the fan was operated.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.105-105
• /
• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• 한국지반공학회논문집
• /
• 제36권8호
• /
• pp.17-25
• /
• 2020

최근 한국건설기술연구원은 우주개발 및 심우주 탐사를 위한 전진기지로서 활용도가 높은 달에 관한 연구수행을 목적으로 달 행성 지상 환경 모사를 위한 대규모 지반 열 진공 챔버(DTVC)를 건설하였다. 유관연구 수행을 위해 대량의 한국형 인공월면토(KLS-1)가 요구되고 있음에도 불구하고 현실적으로 대량생산은 어려운 실정이다. 본 논문에서는 KLS-1의 대량 생산이 가능한 반자동화 시스템에 관해 상세하게 설명하고 있으며, 이것이 기존 생산 시스템보다 7배 이상 효율적임을 밝혀냈다. 뿐만 아니라, 월면토와의 유사성 증대를 위해 월면토 고유 특성인 nanophase Fe(0) (이하 np-Fe(0))을 모사하기 위한 실험적 연구를 진행하였다. 월면토를 이루는 광물 중 하나인 티탄철석(ilmenite)을 활용해 수소기체 환원반응을 진행한 결과, 700℃ 이상의 온도에서는 np-Fe(0)이 형성됨을 밝혀냈으며 900℃까지는 온도와 비례하여 np-Fe(0)이 증가함을 밝혀냈다.

• 한국진공학회지
• /
• 제11권2호
• /
• pp.113-118
• /
• 2002

대면적 GaAs 웨이퍼의 플라즈마 식각 공정에서 식각 깊이의 좋은 균일도를 얻기 위해 반응기 내의 가스 흐름을 조절하는 진보된 기술을 실험하였다. 유한차분수치법(Finite Difference Numerical Method)은 GaAs 웨이퍼의 건식 식각을 위한 반응기 안의 가스 흐름의 분포를 시뮬레이션하기에 유용한 방법이다. 이 방법을 이용해 시뮬레이션된 자료와 실제의 것이 상당히 일치한다는 것이 $BCl_3/N_2/SF_6/He$ICP플라즈마의 실험 결과로 확인되었다. 대면적 GaAs 웨이퍼의 플라즈마 식각 공정 중에서 포커스 링(focus ring)의 최적화된 위치가 가스 흐름과 식각 균일성을 동시에 향상시키는 것을 이해했다. 반응기와 전극(electrode)의 크기가 변하지 않는 상황에서 샘플을 고정시키는 클램프 배치의 최적화를 통해 100 mm(4 inch) GaAs 웨이퍼에서 가스 흐름의 균일성을 $\pm$1.5 %, 150 mm(6 inch) 웨이퍼에서는 $\pm$3% 이하로 유지시킬 수 있는 것을 시뮬레이션결과에서 확인할 수 있다. 시뮬레이션된 가스 흐름의 균일도 자료와 실제 식각 깊이 분포실험 데이터의 비교로 대면적 GaAs 웨이퍼에서 건식 식각의 뛰어난 균일성을 얻기 위해서는 반응기 내의 가스흐름분포의 조절이 매우 중요함을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.135-135
• /
• 2015

Tubes are of extreme importance in industries as for fluid channels or wave guides. Furthermore, some weapon systems such as cannons use the tubes as gun barrels. To increase the service life of such tubes, a protective coating must be applied to the tubes' inner surface. However, the coating methods applicable to the inner surface of the tubes are very limited due to the geometrical restriction. A small-diameter cylindrical magnetron sputtering gun can be used to deposit coating layers on the inner surface of the large-bore tubes. However, for small-bore tubes with the inner diameter of one inch (~25 mm), the magnetron sputtering method can hardly be accommodated due to the space limitation for permanent magnet assembly. In this study, a new approach to coat the inner surface of small-bore tubes with the inside diameter of one inch was developed. Instead of using permanent magnets for magnetron operation, an external electro-magnet assembly was adopted around the tube to confine the plasma and to sustain the discharge. The electro-magnet was operated in pulse mode to provide the strong axial magnetic field for the magnetron operation, which was synchronized with the negative high-voltage pulse applied to the water-cooled coaxial sputtering target installed inside the tube. By moving the electro-magnet assembly along the tube's axial direction, the inner surface of the tube could be uniformly coated. The inner-surface coating system in this study used the tube itself as the vacuum chamber. The SS-304 tube's inner diameter was 22 mm and the length was ~1 m. A water-cooled Cu tube (sputtering target) of the outer diameter of 12 mm was installed inside of the SS tube (substrate) at the axial position. The 50 mm-long electro-magnet assembly was fed by a current pulse of 250 A at the frequency and pulse width of 100 Hz and 100 usec, respectively. The calculated axial magnetic field strength at the center was ~0.6 Tesla. The central Cu tube was synchronously driven by a HiPIMS power supply at the same frequency of 100 Hz as the electro-magnet and the applied pulse voltage was -1200 V with a pulse width of 500 usec. At 150 mTorr of Ar pressure, the Cu deposition rate of ~10 nm/min could be obtained. In this talk, a new method to sputter coat the inner surface of small-bore tubes would be presented and discussed, which might have broad industrial and military application areas.

• 한국전기전자재료학회논문지
• /
• 제11권8호
• /
• pp.581-586
• /
• 1998

This paper describes athermally stimulated displacement current (TSDC) of arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of AA LB film were performed from temperature to about 11$0^{\circ}C$ at a rate of 0.2$^{\circ}C$/ｓ inside a vacuum chamber for a reference. And the TSDC measurements PAAS LB film were performed from room temperature to about 25$0^{\circ}C$ and temperature was increased at the same rate as that of AA LB film. They show that there are TSDC peaks at about 7$0^{\circ}C$ in the arachidic acid LB films, and at about 7$0^{\circ}C$ and 16$0^{\circ}C$ in the PAAs LB films. Results of these measurements indicate the one small peak at 7$0^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at 16$0^{\circ}C$ is possibly due to dipole of C-O group in the PASS molecule. We have calculated the vertical component of the AA and PAAs L film out of the TSDC curves. It shows that the dipole moment of the AA LB film is about 70-mD at 7$0^{\circ}C$. And the dipole moment of PAAS LB film is about 040mD at 7$0^{\circ}C$ and about 200mD at 16$0^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PASS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

• 한국표면공학회지
• /
• 제29권5호
• /
• pp.345-349
• /
• 1996

The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

• 분석과학
• /
• 제7권4호
• /
• pp.471-476
• /
• 1994

PIXE(양성자 유발 X-선 발생) 분석법을 이용한 박막 두께 측정의 가능성을 알아보기 위하여, 구리판 위에 코팅된 금 박막 시료들을 이용하여 실험을 수행하였다. 두 가지 실험방법을 사용하여 분석을 하였으며, 결과를 비교하여 보았다. 또한 분석 결과의 정확성을 확인하기 위하여 무게측정 방법과 양성자 RBS 분석법에 의한 결과들과 비교하여 보았다. 이 분석 방법은 고고학 시료나 거대시료와 같이 진공 표적함에 집어 넣을 수 없는 경우에도 비파괴적으로 박막의 두께를 측정할 수 있는 장점을 갖고 있다.