• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.466-469
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• 2002

In the sintering of YIG, abnormal grain growth phenomena was observed. This abnormal grain growth is related to the sintering temperature in this experiment. In the sintering below 145$0^{\circ}C$., the sintered body showed narrow size distribution. However, in the sintering at 145$0^{\circ}C$, a few grains grew rapidly with respect to other grains, and bimodal size distribution was appeared. Liquid phase was not observed far from the abnormally grown large grains, but only near the large grains. This means that the abnormal grain growth was caused by the nonuniform distribution of liquid phase which promote the grains growth. This nonuniform distribution of liquid phase was thought to be due to the nonuniform mixing of the starting materials. This abnormal grain growth was suppressed by enhance the compositional uniformity by multiple calcination.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1094-1101
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• 1999

Liquid phase sintered silicon carbides were obtained by sintering of $\alpha$-SiC and $\beta$-SiC powders as starting materials at 2173K and 2273K respectively. The SiCplatelet seeds of different sizes were obtained by a repeated ball milling and sedimentation. Their mean size (d50) were 2.217 ${\mu}{\textrm}{m}$ 13.67 ${\mu}{\textrm}{m}$, 22.17${\mu}{\textrm}{m}$ respectively 6wt%Al2O3-4 wt% Y2O3 was used as the sintering additives for the liquid phase sintering. The two silicon carbides had a bimodal microstructure consisting of small matrix grains and large platelike grains when the SiCplatelet seeds were added. In the case of the $\beta$-SiC the appreciable phase transformation occurred as sintering temperature increased from 2173K to 2273K and resulted in matrix shape change from equiaxed into platelike grains. In contrast there was no shape change for the $\alpha$-SiC. The size of large grains in the $\alpha$-SiC of large grains in the $\alpha$-SiC was larger than that of the large grains in the $\beta$-SiC These results suggested that the growth of the $\alpha$-SiCplatelet in the $\alpha$-SiC matrix was more favored than that of the $\alpha$-SiCplatelet in the $\beta$-SiC matix. The three point flexural strength decreased as the added seed size increased. Fracture toughness values of samples sintered at 2273K were higher than those of samples sintered at 2173K.

• Journal of Powder Materials
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• v.5 no.2
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• pp.133-138
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• 1998

The effect of $\beta$-$Si_3N_4$ seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine $\alpha$-$Si_3N_4$(mean particle size: 0.26 ${\mu}m$) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on $Si_3N_4$ seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of $\beta$-$Si_3N_4$ seed and overall chemical composition. For specimens with initially low $\beta$-content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high $\beta$-content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.10b
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• pp.10-10
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• 1998

The growth process of solid grains in a liquid matrix is usually explained in tem1S of Ostwald ripening. The variation of growth (dissolution) rate as a function of grain size during Ostwald ripening predicted that the dissolution rate becomes very large as grain size decreases but the growth rate of a large grain is rather limited. Therefore. a rather uniform size distribution of grain size is maintained once after the quasi-equilibrium state is reached. Quite frequently, however, the exaggerated grain growth (EGG) is observed to occur: only a limited number of grains grow exceptionally. From the observation that the EGG occurs only for the faceted grains with apparently straight solid-liquid interfaces, the EGG is suggested to be the consequence of growth process controlled by 2-dimensional nucleation. In this study, the result by computer calculation on the grain growth process controlled by various mechanisms will be given.

• Tribology and Lubricants
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• v.34 no.6
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• pp.279-283
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• 2018

In this study, we investigate the behavior of abrasive particles and change of the stick-slip pattern according to chemical mechanical polishing (CMP) process parameters when a large number of abrasive particles are fixed on a pad. The CMP process is simulated using the finite element method. In the simulation, the abrasive grains are composed of those used in the actual CMP process. Considering the cohesion of the abrasive grains with the start of the CMP process, abrasive particles with various sizes are fixed onto the pad at different intervals so that stick-slip could occur. In this analysis, we determine that when the abrasive particle size is relatively large, the stick-slip period does not change as the pressure increases while the moving speed is constant. However, if the size of the abrasive grains is relatively small, the amount of deformation of the grains increases due to the elasticity of the pad. Therefore, the stick-slip pattern may not be observed. As the number of abrasive particles increases, the stick-slip period and displacement decrease. This is consistent with the decrease in the von Mises yield stress value on the surface of the wafer as the number of abrasive grains increases. We determine that when the number of the abrasive grains increases, the polishing rate, and characteristics are improved, and scratches are reduced. Moreover, we establish that the period of stick-slip increases and the change of the stick-slip size was not large when the abrasive particle size was relatively small.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.275-278
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• 2010

We have examined the Ferroelectric properties of $PbZr_{0.4}Ti_{0.6}O_3$ (PZT) grains by monitoring the surface potential through the utilization of Kelvin force microscopy. Hysteretic and time dependent behaviors of small and large grains were compared with each other. The smaller grain yields had smaller values of surface potential. However, the normalized voltage versus surface potential behavior indicates that the smaller grains became saturated earlier with respect to the writing voltages than did the larger grains. On the other hand, the surface potential hysteresis loop obtained from the smaller grains showed a similar shape to what might be obtained from a Zr rich PZT film. In contrast the hysteresis loop of the larger grain looks like that obtained from a Ti-rich film. In addition, the time dependent behaviors of the smaller grains also revealed a better response than the response of larger grains. The overall ferroelectric properties of the smaller grains seem better than corresponding properties for larger grains. The Ti/Zr ratio of the PZT film which was examined in this study was 60/40.

• Journal of Powder Materials
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• v.11 no.2
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• pp.165-170
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• 2004

Growth behavior of two different types of grains, faceted and rounded, in a liquid matrix has been studied in the (75WC-25TiCN)-30Co system. Powder samples were sintered above the eutectic temperature for various times under a carbon saturated condition. (Ti,W)(C,N) grains with a rounded shape and WC grains with a faceted shape coexisted in the same Co based liquid. With increasing sintering time, the average size of (Ti.W)(C,N) grains increased continuously and very large WC grains appeared. The growth of rounded (Ti,W)(C,N) grains followed a cubic law, r^3-r^3_0$=kt, where r is the average size of the grains, $r_0$ the initial average size, k the proportionality constant and t the sintering time. indicating a diffusion-controlled growth. On the other hand, the growth of the faceted WC grains resulted in a bimodal grain size distribution, showing an abnormal grain growth. These observations show that the growth behavior of different types of grains is governed by their shape, faceted or rounded, even in the same liquid matrix.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.552-560
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• 1988

ZnO low voltage varistor was obtained by varying a) the amount of seed grains, b) the size of seed grains, and c) sintering temperature. Also, the optimum condition for fabricating the ZnO seed grains was studied. Large ZnO seed grains were obtained by washing a ZnO sintered body containing 1m/of BaCO3 in boiling water. When the seed grains were added, abnormal grain growth occurred, and the varistor voltage sharply decreased. However, when more than 5w/o of seed grain content was added, the varistor voltage gradually increased. When 10w/o seed grains of 75~106${\mu}{\textrm}{m}$ were added and sintered for 2 hours at 1200 to 125$0^{\circ}C$, low voltage varistor properties with V1mA/mm of 19V/mm and nonlinear exponent ($\alpha$) of 12 occurred.

• Proceedings of the Korean Society of Crop Science Conference
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• 1991.05a
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• pp.52-53
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• 1991

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.35-40
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• 2022

To fabricate large grain YBCO bulk superconductors by melt process, Sm123 single crystal with a high melting point are mostly used as seeds. However, it also uses Y123 film deposited on MgO single crystal substrate. This study investigated the growth behavior of the Y123 grain during a melt process when single grain YBCO bulk was used as a seed. Single grain Y123 bulk was grown when the seed size was small. When the seed size was relatively large, multiple grains were grown but the grains were still large. Y123 seed crystal was completely decomposed during high temperature anneal at 1040℃ and new Y123 crystals were nucleated during a slow cooling stage below a peritectic temperature. Thereafter, newly formed Y123 crystals from the seed area are thought to grow into the Y1.8 powder compact. The crystallographic orientations of newly nucleated Y123 grains are independent of the crystallographic orientation of Y123 seed. It is thought that the crystallographic orientation of newly nucleated Y123 crystal can be controlled by using Y211-free Y123 single crystal as a seed of homo-seeding melt growth.