• Title/Summary/Keyword: k-opt

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Case Study : Development of Customer Support Center Staffing Model (고객지원 센터의 최적 인력 일정계획 수립 모델 개발에 대한 사례연구)

  • Yu, Woo-Yeon;Kim, Hee-Dong;Yang, Jaek-Yung
    • IE interfaces
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    • v.18 no.3
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    • pp.317-326
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    • 2005
  • Staff scheduling is an important area, both from an academic and industrial point of view. It has become increasingly important as business becomes more service oriented and cost conscious in a global environment. There has been a lot of study to develop new and efficient staff scheduling models and methods. The purpose of this paper is not to develop new theoretical results but to develop a comprehensive user-friendly staffing model that can be applied to the real-world practice. The developed staffing software, OptStaff, provides the optimal configuration of the customer support center including the selection of customer support center locations, the allocation of staffs to each selected location, and schedules of staffs, so as to minimize the total cost while maximizing the customer satisfaction level. OptStaff also has capability to do scenario analysis by varying the levels of parameters and to create a variety of graphs and reports with user-friendly interfaces.

Electrical Characteristics of InAlAs/InGaAs/InAlAs Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation

  • Kim, H.T.;Kim, D.M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.145-152
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    • 2003
  • Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

Aspherical prism lens design and manufacture of a small size and light wight EGD (비구면 프리즘 렌즈를 이용한 소형 경량의 EGD용 광학계 설계 및 제작)

  • Kim, Tae-Ha;Park, Kwang-Bum;Kim, Mi-Jung;Park, Young-Su;Kim, Hwi-Woon;Moon, Hyun-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.454-454
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    • 2007
  • Eye Glass Display (EGD) with microdisplay to realize the virtual display can make the large screen, so virtual image has been developed by using microdisplay panel. This paper shows study of spherical prism lens design and manufacture of a small size and light weigh EGD with 0.59" OLED panel. Code V is used and it designed an aspherical prism lens about eye relief 25mm and 42 degree of filed of view (FOV). With the application this aspheric prism lens to OLED type's microdisplay, virtual image showed 60 inch at 2m. It had less than 2% of distortion value and modulation transfer function in axial had 30% of resolution with 32 lp/mm spatial frequency. We made an injection molding bases to lens designed.

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Development of the Automobile Part for the Engine Oil Leakage Prevention by the Precise Cold Forging (정밀냉간단조에 의한 엔진오일 누수방지용 자동차부품 개발)

  • Kwon H. B.;Lee B. K.
    • Transactions of Materials Processing
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    • v.14 no.8 s.80
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    • pp.675-680
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    • 2005
  • This study was aimed at the design of the dies for the automobile part for the engine oil leakage prevention using the computer simulation to shorten the period of production, on the basis of the process planning which was designed by the field experts. In the computer simulation,'eesy-2-form' of 2D FEM simulation package and 'eesy-DieOpt' have been used, which are the commercial process analysis and die design program. Through the simulation of 'eesy-2-form', we could know the propriety of the forming process, the inner pressure of the die and the suitable fitting pressure between the insert and the sleeve which was not showing any positive tangential stresses in the insert. Through the simulation of 'eesy-DieOpt', we could know the number of the stress ring, the diameter ratios, the stresses of the die, the shrink fitting tolerance and temperature in the condition of the already determined maximum outer die diameter of the multi-stage former. The validity of the die design using the computer simulation was analyzed by the experiments and the results were satisfactory. As the results of this study, the new and easy die design system for cold forging has been developed.

High Performance Amorphous Silicon Oxide Thin Film Solar Cells Fabricated at Very Low Temperature (극저온에서 증착된 비정질실리콘 산화막 기반의 고성능 박막태양전지)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1694-1696
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    • 2016
  • Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

Scarf Design Combined with Opt Art and Geometrical Pattern of Traditional Ddeoksal (옵아트와 전통 떡살의 기하문양을 조합한 스카프디자인 연구)

  • Kim, Sun Young
    • Fashion & Textile Research Journal
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    • v.15 no.3
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    • pp.325-335
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    • 2013
  • This work develops a motif design integrated with geometrical patterns in traditional ddeoksal and that can be applied to a scarf design so that traditional elements unique to Korean culture can be developed further for a modern application to various design fields. For the research method, literature reviews on op art and traditional ddeoksal were conducted with Adobe Illustrator CS3 and Adobe Photoshop CS3. As for the motif combination, such applications were taken as five pieces from the works of Victor Vasarely and some traditional ddeoksal shapes such as oblique line pattern, taegeuk pattern, and geometrical pattern. Abstract and geometrical images were borrowed from op art and ddeoksal for image expression. The total number of works selected was eleven. To realize the applied scarf design, a motif layout was performed with the scarf center or rim highlighted so that each design feature could be remarkable based on the motif combination. With the function of scaling, rotation, opacity control, filtering effect, the changed images were shown through motif distortion. In addition, this work applies a single combined motif to products for a possible transformation into handkerchiefs and boutique scarfs in the case of smaller sized scarfs.

A New Stochastic Binary Neural Network Based on Hopfield Model and Its Application

  • Nakamura, Taichi;Tsuneda, Akio;Inoue, Takahiro
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.34-37
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    • 2002
  • This paper presents a new stochastic binary neural network based on the Hopfield model. We apply the proposed network to TSP and compare it with other methods by computer simulations. Furthermore, we apply 2-opt to the proposed network to improve the performance.

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Synthesis and quantative structure-activity relationships on the antifungal activity of 3-phenylisoxazol and 3-phenyl-2,5-dihydro-5-isoxazolone derivatives (3-phenylisoxazole 및 3-phenyl-2,5-dihydroisoxazol-5-one 유도체의 합성과 살균활성에 관한 구조-활성관계)

  • Sung, Nack-Do;Yu, Seong-Jae;Lee, Hee-Chul
    • The Korean Journal of Pesticide Science
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    • v.5 no.4
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    • pp.20-26
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    • 2001
  • A series of new 2-benzoyl-3-phenyl-2,5-dihydroisoxazol-5-one, (A) and 3-phenyl-5-phenylcarbonyl-oxyisoxazole, (B) derivatives as substrates were synthesized and their quantitative structure-activity relationships (QSAR) analyses between the antifungal activities ($pI_{50}$) and physicochemical parameters of substituents onl the benzoyl group against resistant (RPC:95CC7303) and sensitive (SPC:95CC7105) Phytophthora blight (Phytophthora capsici,) were studied. The synthetic yield (%) and antifungal activities of (A) were higher than (B) and selectivities between the fungi were not showed. From the basis on the Hansch-Fujita analyses, the optimum width values ($(B_2)_{opt.}=ca.\;4.00{\AA}$) of the substituents on the benzoyl group were important factor in determining fungicidal activity against the two fungi. Influence of the substituents as electron withdrawing group on the fungicidal activity against RPC, but not for SPC. And tile bromo- and acetyl-substituents were contributed to higher antifungal activity against RPC and SPC from the results of Free-Wilson analyses.

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Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells

  • Park, Jin-Joo;Kim, Young-Kuk;Lee, Sun-Wha;Lee, Youn-Jung;Yi, Jun-Sin;Hussain, Shahzada Qamar;Balaji, Nagarajan
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.192-195
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    • 2012
  • We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.