• Korean Journal of Materials Research
• /
• v.21 no.2
• /
• pp.111-114
• /
• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.1
• /
• pp.33-38
• /
• 2009

The effect of ${Y_2}{O_3}$ as a sintering additive on thermal conductivity and microstructure of pressureless sintered AIN ceramics was investigated at sintering temperature range from 1,700 to $1,900^{\circ}C$. ${Y_2}{O_3}$ added AIN specimens showed higher densification rate than pure AIN because of the formation of the yttrium aluminates secondary phase by reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ of AIN surface. The thermal conductivity of AIN specimens was promoted by the addition of ${Y_2}{O_3}$ in spite of the formation of secondary phase in AIN gram boundaries and grain boundary triple junction, because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AIN lattice which is primary factor of thermal conductivity. The them1al conductivity of AIN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly. the thermal conductivity of AIN specimen sintered at $1,900^{\circ}C$ for 5 hours improved over 20 %. $141\;Wm^{-1}K^{-1}$, compared with the specimen sintered at $1,900^{\circ}C$ for 1 hour.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.2
• /
• pp.69-73
• /
• 2016

Recently, automotive engineers have paid much attention to waste heat recovery technology as a possible means to improve the thermal efficiency of an automotive engine. A large displacement gasoline engine is generally a V-type engine. It is not cost effective to install two superheaters at each exhaust manifold for the heat recovery purposes. A single superheater could be installed as close to the exhaust manifold as possible for the higher recovery efficiency; however, only half of exhaust gas can be used for heat recovery. On the contrary, the exhaust temperature is decreased for the case where the superheater is installed at a junction of two exhaust tail pipes. With the fact in mind, the optimum position of a single superheater was investigated using simulation models developed from a commercial software package (i.e. AMESim). It was found that installing the superheater near the exhaust manifold could recover 3.8 kW more from the engine exhaust despite utilizing only half of the exhaust mass flow. Based on this result, the optimum layout of an automotive waste heat recovery system was developed and proposed in this paper.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.454-454
• /
• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Korean Journal of Materials Research
• /
• v.20 no.12
• /
• pp.676-680
• /
• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.32 no.1
• /
• pp.22-29
• /
• 1999

Biological and chemical characteristics and trophodynamics in the frontal zone were investigated in the southern waters of Korea, Temperature, nutrients (dissolved inorganic nitrogen, $PO_4^{3-}-P$, and $SiO_2^{-}-Si$) chlorophyll a and zooplankton were collected and analyzed along the two transects, the frontal zone and the non-frontal zone, in April, 1994. Nutrients were higher in the non-frontal zone than in the frontal zone. But chlorophyll a concentration was high in the frontal zone, particularly at the 20 m depth of the main frontal station (St. TII-2), where was located at the junction between the stratified layer and the non-stratified layer with the lowest nutrients. Zooplankton was more abundant in the frontal zone than in the non-frontal zone, particularly at the innermost station of the frontal zone. Copepods showed high composition rate more than $90\%$ at all stations except the main frontal station (St. TII-2). At the main frontal station (St. TII-2), euphausiids and siphonophores were dominated. Chlorophyll a revealed a significant relationships with $SiO_2^{-}-Si$ in both transects and copepods in the non-frontal zone. Copepods also showed very close relationship with siphonophores in the frontal zone. This suggests that the abundance of copepods could be controlled as bottom-up in the non-frontal zone and as top-down in the frontal zone.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.204-205
• /
• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Korean Journal of Animal Reproduction
• /
• v.17 no.4
• /
• pp.339-346
• /
• 1994

An understanding of the structure and function of mammalian spermatozoa requires the iso-lation of these components. In this study, frozen-thawed bovine spermatozoa were treated by physical treatments (vortexing, 26 gauge needle, strained 26 gauge needles and freezing-thawing) or chemical treatments (trypsin, dithiothreitol, sodium dodecylsulfate and $\beta$-mercaptoethanoJ) to yield free heads and tails. The most effective treatment was repeated pumping of sperm suspension through a strained 26 gauge needle conneted to a syringe. Spermatozoa by this treatment were mainly broken at the junction of the head and the tail, resulting in 90-100% yields. Also, sperm head surface did not modify during strained 26 gauge needle treatment when either spermatozoa or sperm heads were incubated in 250${\mu}\textrm{g}$/ml of FITC-UEA 1 for 1 h at room temperature to detect the modification of sperm surface components. Other physical treatments were less efficient for the breakdown of spermatozoa. The effects of chemical treatments on bovine spermatozoa are not noticeable. Dissected sperm heads and tails should be fractional leading to nearly pure components by sucrose gradient centrifugation at 1,000 rpm for 15 min. The result suggest that the established method may be useful for the biochemical study of spermatozoal components, and the understanding of oocyte activation mechanism either by spermatozoal components during fertilization or microinjection of isolated components.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.239-246
• /
• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Applied Chemistry for Engineering
• /
• v.3 no.3
• /
• pp.527-534
• /
• 1992

Raney nickel was used as catalyst in the hydrogen electrode for an alkaline fuel cell. The hydrogen electrode manufactured with the Raney nickel catalyst which was sintered at $700^{\circ}C$ was found to have the highest electrode performance. Using the Raney nickel powder of average particle size $90{\AA}$ for the electrode, the current density which had been measured was $450mA/cm^2$ at $80^{\circ}C$ using 6N KOH solution as an electrolyte. The effects of PTFE addition were investigated with CO-chemisorption, polarization curves and Tafel slope. CO-chemisorption had shown the optimum value when the Raney nickel was mixed with 5wt% of PTFE, but from the current density and Tafel slope at porous Raney nickel electrode, the appropriate value of PTFE addition was 10wt%. Recommendable Ni and Al portion for Raney nickel was 60 : 40 and loading amount was $0.25g/cm^2$. Also the influence of pressing pressure for manufacturing catalytic layer and for junction with gas diffusion layer was examined. The morphology of catalyst surface was investigated with SEM. The influence of reactivation time and heat-treatment temperature were also studied.