• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• Progress in Superconductivity
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• v.8 no.2
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• pp.181-185
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• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.55-60
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• 2009

This paper deals with the analysis of characteristics of the scale non-uniformly formed on the surface of the steel during the steel production processes. The steel made at the high temperature contacts with the oxygen in the air, so forms the scale immediately. The scale has a role to protect the surface of the steel product as a oxide-layer, but the scale formed non-uniformly spoils the exterior of the steel product and occurs the problems about the next processes. There is a pickling process to remove the scale of the steel products, but the real situation is that the pickling process is not also based on the analysis of the characteristics of the scale. Therefore, this paper describe the procedures of the analysis of the scale more effectively using the radio-frequency wave. Using the radio-frequency wave, this paper introduce the experimentations to analyze the distributions of scale, the junction characteristics between the surface of steel and scale and the distributions of scale on the produced steel coil. Also, according to the simple simulations, this paper proves the proprieties about the above contents.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of Power System Engineering
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• v.9 no.2
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• pp.19-25
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• 2005

Empirical experiments have been undertaken to investigate the effects of Intake Pulsating Flow on volumetric efficiency in a diesel engine. Waves occurs in the manifolds of engine owing to the periodic nature of the induction and exhaust processes caused by piston motion. During induction process, as waves travel both directions, they are reflected and interacted each other and pressure waves are transmitted through it. Hence, the flow become more complex and unsteady flow. These pressure waves act upon intake pulsating flow and affects on volumetric efficiency. In this paper the effects of change in length of induction pipes and wide range of engine speed on volumetric efficiency was examined and evaluated. It was found that volumetric efficiency was affected by intake pulsating flow with engine speed and the pipe length. The results obtained were considered by adopting a theory of wave action.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.2
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• pp.44-52
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• 2003

This research suggests a cutting force model for the ball end milling processes. This model includes the effect of tool run out and tool deflection. In the proposed model, the flutes of ball end mills are considered as series of infinitesimal elements and each cutting edge is assumed to be straight for the analysis of the oblique cutting process, in which the small cutting edge element has been analyzed as an orthogonal cutting process n the plane including the cutting velocity and the chip-flow vector. Therefor, the cutting forces can be calculated through the model using the orthogonal cutting data obtained from the orthogonal cutting test. In order to enhance the performance of the model, the flutes of ball end mill are defined to keep geometric consistency at the peak of the ball part and the junction with the end mill part. The divided infinitesimal cutting edges are regulated to be even lengths. Some experiments show the validity of the developed model in the various cutting coalitions.

• Journal of Environmental Science International
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• v.22 no.6
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• pp.695-703
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• 2013

In this study, the effects of four major river project and Kumho River, second biggest branch of Nakdong River, were investigated to provide basic data for proper management of Nakdong River's water quality. Daily sampling processes at three different points, Munsanri (the upper side of Kangjung-Koryung weir), Kangchang (the outlet of the Kumho River) and Samunjin (the lower side of Kangjung-Koryung weir and junction of Kumho River and Nakdong River), were conducted from May 1st 2011 to Sep. 4th 2011. Water samples were analyzed for nine factors, DO, BOD, COD, T-N, T-P, pH, turbidity, SS, and coliform. As demonstrated by the results, concentrations of BOD, T-N, T-P and coliform at Nakdong River were affected by water quality of Kumho River while SS and turbidity were affected by constructions for Kangjung-Koryung weir. Further studies, for example, affects of wastewater treatment facilities, should be followed.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.204-206
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• 1993

In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• The Korean Journal of Physiology and Pharmacology
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• v.12 no.6
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• pp.307-314
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• 2008

Retinal prostheses are being developed to restore vision for the blind with retinal diseases such as retinitis pigmentosa (RP) or age-related macular degeneration (AMD). Among the many issues for prosthesis development, stimulation encoding strategy is one of the most essential electrophysiological issues. The more we understand the retinal circuitry how it encodes and processes visual information, the greater it could help decide stimulation encoding strategy for retinal prosthesis. Therefore, we examined how retinal ganglion cells (RGCs) in in-vitro retinal preparation act together to encode a visual scene with multielectrode array (MEA). Simultaneous recording of many RGCs with MEA showed that nearby neurons often fired synchronously, with spike delays mostly within 1 ms range. This synchronized firing - narrow correlation - was blocked by gap junction blocker, heptanol, but not by glutamatergic synapse blocker, kynurenic acid. By tracking down all the RGC pairs which showed narrow correlation, we could harvest 40 functional connectivity maps of RGCs which showed the cell cluster firing together. We suggest that finding functional connectivity map would be useful in stimulation encoding strategy for the retinal prosthesis since stimulating the cluster of RGCs would be more efficient than separately stimulating each individual RGC.