• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.39-46
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• 2006

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Journal of Mechanical Science and Technology
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• v.16 no.11
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• pp.1440-1447
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• 2002

Adhesion of a hemispherical tip to the flat surface in nano-structures is simulated using the molecular dynamics technique. The tip and plates are modeled with the Lennard-Jones molecules. The simulation focuses on the deformation of the tip. Detailed descriptions on the evolution of interaction force, the energy dissipation due to adhesion hysteresis, the forma- tion-growth-breakage of adhesive junction as well as the evolution of molecular distribution during the process are presented. The effects of the tip size, the maximum tip approach, the tip temperature, and the affinity between the tip and the mating plate are also discussed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.10-12
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• 2002

Single Josephson junctions of 50 $\mu$m $\times$ 50 $\mu$m were fabricated for several oxidation conditions to investigate controllabilities of critical current density ($J_{c}$) with the standard KRISS processes. Considering the self-field effect suppressing the observed critical current ($I_{c}$) at high $J_{c}$ region, we could reasonably estimate $J_{c}$ values from I-V observations. The dependence of the estimated $J_{c}$ as a function of exposure, which is equal to pressure(P) times time(t), was well fitted to a curve of $J_{c}$ ~ $(Pt)^{-0.36}$. The maximum $J_{c}$ value at the controllability margin was found to be 4 kA/$cm^{2}$ with the current equipment set up.

• Animal cells and systems
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• v.12 no.1
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• pp.1-9
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• 2008

In the developing limb, chondrogenesis is an important prerequisite for the formation of cartilage whose template is required for bone formation. Chondrogenesis is a tightly regulated multi-step process, including mesenchymal cell recruitment/migration, prechondrogenic condensation of the mesenchymal cells, commitment to the chondrogenic lineage, and differentiation into chondrocytes. This process is controlled exquisitely by cellular interactions with the surrounding matrix and regulating factors that initiate or suppress cellular signaling pathways and transcription of specific genes in a temporal-spatial manner. Understanding the cellular and molecular mechanisms of chondrogenesis is important not only in the context of establishing basic principle of developmental biology but also in providing research direction toward preventive and/or regenerative medicine. Here, I will overview the current understanding of cellular and molecular mechanisms contributing to prechondrogenic condensation processes, the crucial steps for chondrogenesis, focusing on cell-cell and cell-matrix interactions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.93-97
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• 1990

Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/$CsNO_3$ aqueous electrolyte interfaces were qualitatively analyzed in terms of their cyclic current-voltage characteristics. The current-voltage characteristic curves, the ion adsorption and potential barrier processes at the semiconductor interfaces were verified using continuous cyclic voltammetric methods. The pn or np junction structures and the related rectifying types at the doped semi-condudtor-electrolyte inferfaces are determined by the space charges.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.142-147
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• 2010

We evaluated characteristics of ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold) surface treatment for mobile equipment that requires high reliability, in addition to investigating surface treatment processes for semiconductor boards that require high reliability such as regular PCB-package systems, board-on-chip, chip-scaled package (CSP), etc and application for semiconductor package board of SIP, BOC. As a result, it appeared that ENEPIG has superior properties compared to ENIG surface treatment in corrosion resistance, solder junction, wetting, etc. We anticipate that these results will be able to lend credibility to ENEPIG as a low-cost alternative for producing mobile devices such as the cell phones, especially when applied to mass production.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Progress in Superconductivity
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• v.3 no.1
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• pp.70-73
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• 2001

We report the spin injection and transport properties of three terminal devices of Co/Au/$YBa_2$$Cu_3$$O_{y}$(F/N/S) tunnel junctions by injection of spin-polarized quaiparticles using a cobalt ferromagnetic injector. The observed current gain depends on the thickness of Au interlayer and is directly related to the nonequilibrium magnetization due to spin relaxation effects. The tunnel characteristic of a F/N/S tunnel junctions exhibited a zero bias conductance peak (ZBCP). The suppression of the ZBCP was observed due to the suppression of Andreev reflection at the interface, which is due to the spin scattering processes at the interface between a ferromagnetic and a d-wave superconductor.r.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.135-142
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• 2024

Cu-Cu bonding, one of the key technologies in advanced packaging, enhances semiconductor chip performance, miniaturization, and energy efficiency by facilitating rapid data transfer and low power consumption. However, the quality of the interface bonding can significantly impact overall bond quality, necessitating strategies to quickly detect and classify in-process defects. This study presents a methodology for detecting defects in wafer junction areas from Scanning Acoustic Microscopy images using a ResNet-50 based deep learning model. Additionally, the use of the defect map is proposed to rapidly inspect and categorize defects occurring during the Cu-Cu bonding process, thereby improving yield and productivity in semiconductor manufacturing.

• Journal of Digital Contents Society
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• v.15 no.2
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• pp.209-217
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• 2014

It is very important to classify a lot of table-form documents into the same type of classes or to extract information filled in the template automatically. For these, it is necessary to accurately analyze table-form structure. This paper proposes an algorithm to extract corner points based on line edge segments and to classify the type of junction from table-form images. The algorithm preprocesses image through binarization, skew correction, deletion of isolated small area of black color because that they are probably generated by noises.. And then, it processes detections of edge block, line edges from a edge block, corner points. The extracted corner points are classified as 9 types of junction based on the combination of horizontal/vertical line edge segments in a block. The proposed method is applied to the several unconstraint document images such as tax form, transaction receipt, ordinary document containing tables, etc. The experimental results show that the performance of point detection is over 99%. Considering that almost corner points make a correspondence pair in the table, the information of type of corner and width of line may be useful to analyse the structure of table-form document.