• 천문학회보
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• 제40권1호
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• pp.66.3-67
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• 2015

Without scrutinizing reflection, the plasma comprising a coronal loop is usually regarded to reside within a flux rope. This picture seems to have been adopted from laboratory plasma pinches, in which a plasma of high density and pressure is confined in the vicinity of the flux rope axis by magnetic tension and magnetic pressure of the concave inward magnetic field. Such a configuration, in which the plasma pressure gradient and the field line curvature vector are almost parallel, however, is known to be vulnerable to ballooning instabilities (to which belong interchange instabilities as a subset). In coronal loops, however, ideal MHD (magnetohydrodynamic) ballooning instabilities are impeded by a very small field line curvature and the line-tying condition. We, therefore, focus on non-ideal (resistive) effects in this study. The footpoints of coronal loops are constantly under random motions of convective scales, which twist individual loop strands quite randomly. The loop strands with the axial current of the same direction tend to coalesce by magnetic reconnection. In this reconnection process, the plasma in the loop system is redistributed in such a way that a smaller potential energy of the system is attained. We have performed numerical MHD simulations to investigate the plasma redistribution in coalescence of many small flux ropes. Our results clearly show that the redistributed plasma is more accumulated between flux ropes rather than near the magnetic axes of flux ropes. The Joule heating, however, creates a different temperature distribution than the density distribution. Our study may give a hint of which part of magnetic field we are looking to in an observation.

• 천문학회보
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• 제40권1호
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• pp.60.2-60.2
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• 2015

Since its detection in 1980, the $8-{\mu}m$ north-polar brightening of $CH_4$ on Juptier has not moved from $180^{\circ}$ (SysIII) longitude. The $8-{\mu}m$ $CH_4$ brightening is mostly thermal and very similar to that of $13-{\mu}m$ $C_2H_2$ emissions, but the morphology of these hydrocarbon north-polar brightenings are very different from that of the $3-{\mu}m$ $H_3{^+}$ auroral oval suggesting a significantly different excitation process yet unknown heating mechanism. Recently, Kim et al. (submitted to Icarus, 2015) found that that the center of the $3-{\mu}m$ $CH_4$ northern bright spot is located at ${\sim}200^{\circ}$ (SysIII) longitude, which is ${\sim}20^{\circ}$ west from the center of the $8-{\mu}m$ north-polar bright spot, and it does not coincide with the $3-{\mu}m$ $H_3{^+}$ bright spot. They found significantly high temperatures (500 ~ 850K) from $CH_4$ rotational lines on the $3-{\mu}m$ bright spot above the $1-{\mu}bar$ pressure level, while we find cooler temperatures (<350K) over the the $8-{\mu}m$ spot. They also found that the upper states of the $3-{\mu}m$ $CH_4$ bands are mostly populated by non-thermal excitations, such as auroral particle precipitations and/or Joule heatings in contrast to the $8-{\mu}m$ thermal emission. This finding indicates that the $10-{\mu}m$ hydrocarbon brightening is confined to low altitudes below the $1-{\mu}bar$ level eliminating the long-suggested possibility of direct auroral bombardments while opening a new possibility of dynamical origin for the $10-{\mu}m$ brightening.

• 한국항공우주학회지
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• 제33권5호
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• pp.1-8
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• 2005

아크히터의 작동특성을 예측하고 아크히터 자체의 설계와 해석을 위해, 세그먼트 아크히터(segmented arc-heater)의 내부 유동을 계산하였다. 지금까지 몇몇 연구자들이 아크히터 내부 유동을 수학적으로 모델링하여 일부 아크히터의 내부 유동을 정확하게 계산하는데 성공하였지만, 다양한 아크히터의 여러 운용 조건을 모두 만족하는 수학적 모델을 완성하지 못했다. 본 연구에서는 수학적 모델링의 범용성 확보를 위해, 아크 히터 내부의 난류 유동에 중점을 두었다. 기존의 대수 난류 모델을 대신하여 세 개의 2방정식 난류를 사용하였으며, 계산 결과 $k-\varepsilon$ 난류 모델이 아크히터 내부의 유동을 모사하는데 적합하다는 것을 확인했으며, 난류가 아크히터 유동을 특성을 좌우하는 중요한 요소 중에 하나라는 것을 밝혔다.

• 한국안전학회지
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• 제33권5호
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• pp.15-20
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• 2018

This paper describes the fusing time characteristics of Light PVC Sheathed Circular Cord(VCTF) and Tray Frame Retardant(TFR) cables according to increased temperature under over current condition. The experimental equation will be used to determine the validity and reliability of the test results. The over current flowed 3, 5 and 10 times higher than the amount of allowable current using DC power supply with DAQ(Data Acquisition) measurement system. An infrared radiation heater, which was controlled by a variable AC auto transformer, was used to increase the temperature from room temperature to 50, 100 and 150 degrees Celsius. First, two type of cables were analyzed those with different cross-sectional areas with in the same structure and those with different structures with in the same cross-sectional areas. Then, it was determined how fusing time had been influenced according to the cross-sectional areas and different structures, respectively. The cable resistance was increased by joule heating according to increasing temperature. Therefore, the allowable current of cable is decreased. Finally, the fusing time of the cable was decreased due to increased temperatures at current flow, which were 3 times the amount of allowable current. The instantaneous breakdown was observed when current flow was 5 and 10 times over the amount of allowable current. The fusing time is directly affected by the structure of cable insulation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.259-267
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• 2002

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

• 한국초전도ㆍ저온공학회논문지
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• 제19권2호
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• pp.38-43
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• 2017

The role of current lead in high-temperature superconducting synchronous machine (HTSSM) is to function as a power supply by connecting the power supply unit at room temperature with the HTS field coils at cryogenic temperature. Such physical and electrical connection causes conduction and Joule-heating losses, which are major thermal losses of HTSSM rotors. To ensure definite stability and economic feasibility of HTS field coils, quickly and smoothly cooling down the current lead is a key design technology. Therefore, in this paper, we introduce a novel concept of a cooling anchor to enhance the cooling performance of a metal current lead. The technical concept of this technology is the simultaneously chilling and supporting the current lead. First, the structure of the current lead and cooling anchor were conceptually designed for field coils for a 1.5 MW-class HTSSM. Then, the effect of this installation on the thermal characteristics of HTS coils was investigated by 3D finite element analysis.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.150-150
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• 2010

Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of $1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability.

• 한국인터넷방송통신학회논문지
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• 제14권5호
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• pp.215-221
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• 2014

본 논문에서는 RF 고전력 스트레스에 의한 SAW 디바이스의 신뢰성 분석을 위하여 향상된 내전력 시험시스템 및 시험방법을 제안하고 고장분석을 통해 고장메카니즘을 분석하였다. 광학현미경, SEM(Scanning Electron Microscope) 및 EDX(Energy Dispersive X-ray Spectro-scopy)장비를 이용하여 고장 분석한 결과, SAW 디바이스의 고장메카니즘은 고전류 밀도 및 고온 조건에서 줄열에 의한 Electromigration으로 분석하였다. Electromigration은 IDT전극에 void와 hillock을 생성하고, 그 결과로 전극이 단락과 단선되어 삽입손실이 증가하는 것이다. 제안된 내전력 시험시스템과 방법을 이용하여 450MHz CDMA용 SAW 필터의 가속수명시험을 수행하고, 아이링 모델과 와이블 분포를 이용하여 SAW 필터의 $B_{10}$수명은 98,500시간으로 추정하였다.