• 한국초전도학회:학술대회논문집
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• v.9
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• pp.133-133
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• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-T$_c$ superconducting (HTS) YBa$_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height t/h. The spread of step-edge junction parameters was measured from each13 junctions with t/h=l/3, l/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K..

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.263-267
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• 1998

In this study, we have fabricated in-situ multilayer $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ ramp edge type junctions by using a metal mask and pulsed laser deposition method and studied the junction properties. The junctions showed RSJ-like I-V characteristics. The normal state junction resistance R, of $18 \omega$ was nearly constant with temperature. The dc-SQUID sensors fabricated with the junctions show a sensitivity that transfer function dV/$d\Phi$)~$22\mu$V/$\Phi_{0}$, indicating that the in-situ ramp edge type junction is potentially useful for sensor application.

• Progress in Superconductivity
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• v.6 no.1
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• pp.89-94
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• 2004

The policrystalline$SmBa_2$$Cu_2$$O_{y}$ was synthesized by the solid state reaction method. The dependence of AC susceptibility on temperature and applied ac field was studied. The critical temperature $T_{c}$ is about 92 K. As the ac field is increased, the slope and the value of real part of susceptibility become smaller and the peak position of imaginary part $T_{P}$ was shifted to a lower temperature with peak broadening. Using Bean's model, we determined intergrain critical current density $J_{c}$ and obtained $44 A/{cm}^2$ at 75 K. From the relation of the $J_{c}$ (T)=($1-T/T_{c}$ )$^{\beta}$ we obtained $\beta$=0.8 and found that the Josephson junction type of the $SmBa_2$$Cu_2$$O_{y}$ is SIS junction. The peak of the imaginary part shifts to higher temperature with increasing frequency, f. from Arrhenius plot, we obtained the activation energy of about 0.96 eV.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.5-8
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• 2016

We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ${\sim}6{\mu}A$ at T = 2.3 K and the supercurrent persists even at T = 4.7 K. Magnetic field dependence of the critical current is consistent with a theoretical fit using the narrow junction model. The superconducting quantum interference device (SQUID) was also fabricated using two PbIn-Au-PbIn junctions connected in parallel. Under perpendicular magnetic field, we clearly observed periodic oscillations of dV/dI with a period of magnetic flux quantum threading into the supercurrent loop of the SQUID. Our fabrication methods would provide an easy and simple way to explore the superconducting proximity effects without ultra-low-temperature cryostats.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.109-110
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• 2002

The purpose of a superconductive DC/SFQ circuit is to produce a controlled number of picosecond single flux quantum pulses at the output when a slowly changing DC current is applied to the input. In this work, we have designed and simulated a DC/SFQ circuit based on Nb/Al$O_{x}$/Nb Josephson junction technology. From the simulation, we could obtain the margins for various circuit parameters. And also we have successfully operated a DC/SFQ circuit which was fabricated with the same design. The margin for the input bias current of the circuit was observed to be of $\pm$60%, which was very close to the simulated value.

• Progress in Superconductivity
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• v.1 no.2
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• pp.105-109
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• 2000

We have designed and fabricated a single-flux-quantum(SFQ) four-stage shift register using YBCO bicrystal Josephson junctions, and tested its operations using a digital measurement set-up. The circuit consists of 4 shift register stages and a read SQUID placed next to each side of the shift register. Each SQUID was inductively coupled to the nearby shift register stage. The major obstacle in testing the circuits was the interference between the two read SQUIDs, and we could get over the problem by determining the correct operation points of the SQUID from the simultaneously measured modulation curves. Loaded data ('1' or '0') were successfully shifted from a stage to the next by a controlled current pulse injected to the bias lines located between the stages, and the corresponding correct data shifts were observed with the two read SQUIDs.

• Progress in Superconductivity
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• v.4 no.1
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• Progress in Superconductivity
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• v.9 no.2
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• pp.157-161
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• 2008

Due to high speed operations and ultra low power consumptions RSFQ logic circuit is a very good candidate for future electronic device. The focus of the RSFQ circuit development has been on the advancement of analog-to-digital converters and microprocessors. Recent works on RSFQ ALU development showed the successful operation of an 1-bit block of ALU at 40 GHz. Recently, the study of an RSFQ analog-to-digital converter has been extended to the development of a single chip RF digital receiver. Compared to the voltage logic circuits, RSFQ circuits operate based on the pulse logic. This naturally leads the circuit structure of RSFQ circuit to be pipelined. Delay time on each pipelined stage determines the ultimate operating speed of the circuit. In simulations, a two junction Josephson transmission line's delay time was about 10 ps, a splitter's 14.5 ps, a switch's 13 ps, a half adder's 67 ps. Optimization of the 4-bit ALU circuit has been made with delay time consideration to operate comfortably at 10 GHz or above.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Progress in Superconductivity
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• v.10 no.2
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• pp.74-78
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• 2009

Inter-grain nanobridges of the $MgB_2$ superconductor have been fabricated by focused-ion-beam(FIB) and their electrical transport properties were studied. The $MgB_2$ film was prepatterned into microbridges by a standard argon ion milling technique and then FIB-patterned into 100 nm$\times$100 nm bridges. Current-voltage characteristics showed a strong flux-flow type behavior at all temperatures with a trait of Josephson coupling near $T_c$. At low temperatures, the curves showed a two-step resistance-doubled transition with occasional hysteresis. The resistance-doubling transition is believed to be due to a two-channel flux-flow effect. The temperature-dependent critical current data showed $I_c(T){\propto}(1-T/T_c)^2$ near $T_c$, same as a normal barrier junction, and $I_c(T){\propto}(1-T/T_c)^{1.2}$ at low temperatures, similar to that of a film.