• Progress in Superconductivity
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• v.12 no.2
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• pp.93-98
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• 2011

Pinning force is the mechanism between a superconductor and a permanent magnet and it provides a stable levitation. However, when external force greater than the pinning force such as the earthquake exerts, the levitated object may lose the levitating characteristic. In order to achieve more stabilized levitation, the copper plate was inserted in between a superconductor and permanent magnets. And by applying the eddy current effect caused from the relationship between a copper plate and permanent magnets, more stabilized levitation can be established. In this study, an optimized design was found based on various configurations of permanent magnet's polarity, thickness and area of copper plate, and the gap distance between copper plate and permanent magnet. As results, higher eddy current value was obtained at where the change of polarity exists in permanent magnet configuration, and the highest eddy current value was observed at the copper plate thickness of 5 mm and the area of 80 mm ${\times}$ 80 mm. From the resulted optimized conditions above, which are 7 mm gap distance between a superconductor and permanent magnets and 80 mm ${\times}$ 80 mm ${\times}$ 5 mm dimension of a copper plate, the stiffness value was 65 % increased comparing to without any copper plate insertion.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.267-274
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• 2005

This paper presents the fabrication of surface acoustic wave (SAW)-based pressure sensor for long-term stable mechanical compression force measurement. SAW pressure sensor has many attractive features for practical pressure measurement: no battery requirement, wireless pressure detection especially at hazardous environments, and easy other functionality integrations such as temperature, humidity, and RFID. A $41^{\circ}$ YX $LiNbO_3$ piezoelectric substrate was used because of its high SAW propagation velocity and large values of electromechanical coupling factors $K^2$. A silicon substrate with $\~200{\mu}m$ deep cavity was bonded to the diaphragm with epoxy, in which gold was covered all over the inner cavity in order to confine electromagnetic energy inside the sensor, and provide good isolation of the device from its environment. The reflection coefficient $S_{11}$ was measured using network analyzer. High S/N ratio, sharp reflected peaks, and clear separation between the peaks were observed. As a mechanical compression force was applied to the diaphragm from top with extremely sharp object, the diaphragm was bended, resulting in the phase shifts of the reflected peaks. The phase shifts were modulated depending on the amount of applied mechanical compression force. The measured $S_{11}$ results showed a good agreement with simulated results obtained from equivalent admittance circuit modeling.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.323-330
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• 2005

We fabricate PIN PD (Positive Intrinsic Negative Photo-Diode) for CWDM optical repeater and optical transmission system, and analyze theoretically the characteristics to verify the capability of device fabricated. Furthermore, we integrate CWDM filter into PD package to enhance the cost and the performance when compared to the conventional system, in which CWDM filter and PD package are linked by optical fusion splicing. The integrated CWDM PD is fabricated by three steps as follows: CWDM filter design, PD packaging, and product assembly and test. The results of measurement for PD fabricated reveal 0.5 dB bandwidth of 17 nm, isolation over 60 dB at transmission port and over 20 dB at reflection port. Also, the IMD3 for wireless communication is over 63 dBc, and the responsivity of PD presents over 0.9 A/W for 20 samples of the total 23 PD. The total insertion loss reduces about 0.4${\~}$0.7 dB due to the integrated assembly of CWDM and PD.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.9
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• pp.815-821
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• 2013

The efficiency and lifetime of a polymer electrolyte membrane fuel cell (PEMFC) system is critically affected by the humidity of the incoming gas, which should be maintained properly under normal operating conditions. Typically, the incoming gas of a fuel cell is humidified by an external humidifier, but few studies have reported on the device characteristics. In this study, a laboratory-scale planar membrane humidifier is designed to investigate the characteristics of water transport through a hydrophilic membrane. The planar membrane humidifier is immersed in a constant temperature bath to isolate the humidifier from the effect of temperature variations. The mass transfer capability of the hydrophilic membrane is first examined under isothermal conditions. Then, the mass transfer capability is investigated under various conditions. The results show that water transport in the hydrophilic membrane is significantly affected by the flow rate, operating temperature, operating pressure, and flow arrangement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of Trauma and Injury
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• v.26 no.3
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• pp.248-251
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• 2013

Introduction: A post-traumatic mesenteric arteriovenous fistula (AVF) is extremely rare. Case Report: A previously healthy 26-year-old male was injured with an abdominal stab wound. Computed tomography (CT) showed liver injury, pancreas injury and a retropancreatic hematoma. We performed the hemostasis of the bleeding due to the liver injury, a distal pancreatectomy with splenectomy and evacuation of the retropancreatic hematoma. On the 5th postoperative day, an abdominal bruit and thrill was detected. CT and angiography showed an AVF between the superior mesenteric artery (SMA) and the inferior mesenteric vein with early enhancement of the portal vein (PV). The point of the AVF was about 4 cm from the SMA's orifice. After an emergent laparotomy and inframesocolic approach, the isolation of the SMA was performed by dissection and ligation of adjacent mesenteric tissues which was about 6 cm length from the nearby SMA orifice, preserving the major side branches of the SMA, because the exact point of the AVF could not be identified despite the shunt flow in the PV being audible during an intraoperative hand-held Doppler-shift measurement. After that, the shunt flow could not be detected by using an intraoperative hand-held Doppler-shift measuring device. CT two and a half months later showed no AVF. There were no major complications during a 19-month follow-up period. Conclusion: Early management of a post-traumatic mesenteric AVF is essential to avoid complications such as hemorrhage, congestive heart failure and portal hypertension.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Molecules and Cells
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• v.37 no.6
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• pp.497-502
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• 2014

Microfluidics can provide unique experimental tools to visualize the development of neural structures within a microscale device, which is followed by guidance of neurite growth in the axonal isolation compartment. We utilized microfluidics technology to monitor the differentiation and migration of neural cells derived from human embryonic stem cells (hESCs). We co-cultured hESCs with PA6 stromal cells, and isolated neural rosette-like structures, which subsequently formed neurospheres in suspension culture. Tuj1-positive neural cells, but not nestin-positive neural precursor cells (NPCs), were able to enter the microfluidics grooves (microchannels), suggesting that neural cell-migratory capacity was dependent upon neuronal differentiation stage. We also showed that bundles of axons formed and extended into the microchannels. Taken together, these results demonstrated that microfluidics technology can provide useful tools to study neurite outgrowth and axon guidance of neural cells, which are derived from human embryonic stem cells.

• Bulletin of the Korean Chemical Society
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• v.34 no.8
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• pp.2408-2412
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• 2013

We demonstrate herein the synthesis and modification of magnetic nanoparticles and its use in the immobilization of the lipase. Magnetic $Fe_3O_4$ nanoparticles (MNPs) were prepared by simple co-precipitation method in aqueous medium and then subsequently modified with tetraethyl orthosilicate (TEOS) and 3-aminopropyl triethylenesilane (APTES). Silanization magnetic nanoparticles (SMNP) and amino magnetic nanomicrosphere (AMNP) were synthesized successfully. The morphology, structure, magnetic property and chemical composition of the synthetic MNP and its derivatives were characterized using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) analysis, X-ray diffraction, superconducting quantum interference device (SQUID) and thermogravimetric analyses (TGA). All of these three nanoparticles exhibited good crystallization performance, apparent superparamagnetism, and the saturation magnetization of MNP, SMNP, AMNP were 47.9 emu/g, 33.0 emu/g and 19.5 emu/g, respectively. The amino content was 5.66%. The AMNP was used to immobilize lipase, and the maximum adsorption capacity of the protein was 26.3 mg/g. The maximum maintained activity (88 percent) was achieved while the amount of immobilized lipase was 23.7 mg $g^{-1}$. Immobilization of enzyme on the magnetic nanoparticles can facilitate the isolation of reaction products from reaction mixture and thus lowers the cost of enzyme application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.