• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.102-108
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• 2015

This paper proposes a new fault isolation methodology for a smart protective device which plays an agent role on the smart grid distribution system with the distributed generation. It, by itself, determines accurately whether its protection zone is fault or not, identifies the fault zone and separates the fault zone through the exchange of fault information such as the current information and the voltage information with other protective devices using bi-directional communication capabilities on the smart grid distribution system. The heuristic rules are obtained from the structure and electrical characteristics determined according to the location of the fault and DG (Distributed Generation) when faults such as single-phase ground fault, phase-to-phase short fault and three-phase short fault occur on the smart grid distribution system with DG.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• 한국구조물진단유지관리공학회 논문집
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• 제23권6호
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• pp.77-83
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• 2019

원자력발전소에 지진격리장치를 설치하면 지진에 의한 하중을 지진격리장치가 담당하면서 설치 전보다 큰 변위가 발생하게 될 것으로 예상되며, 변위증가에 따라 일부 설비의 지진리스크가 증가될 가능성이 있다. 특히 지진격리된 구조물과 일반 구조물을 연결하는 설비인 배관 시스템의 경우 지진리스크가 크게 증가될 것으로 예상된다. 본 연구에서는 원자력발전소 배관 시스템의 취약부위인 강재 배관 Tee의 한계상태를 누수로 정의하고 면내반복가력시험을 수행하였다. 강재 배관 Tee의 모멘트와 변형각은 기존의 센서를 이용한 계측이 어려우므로 이미지 신호를 이용하여 측정하였다. 본 연구에서는 3인치 강재 배관 Tee의 모멘트와 변형각의 관계를 이용한 누수 선도 및 저주기 피로 곡선들을 제시하였다.

• Smart Structures and Systems
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• 제23권1호
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• pp.91-106
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• 2019

Adopting sloped rolling-type isolation devices underneath a raised floor system has been proved as one of the most effective approaches to mitigate seismic responses of the protected equipment installed above. However, pounding against surrounding walls or other obstructions may occur if such a base-isolated raised floor system is subjected to long-period excitation, leading to adverse effects or even more severe damage. In this study, real-time hybrid simulation (RTHS) is adopted to assess the control performance of a smart base-isolated raised floor system as it is an efficient and cost-effective experimental method. It is composed of multiple sloped rolling-type isolation devices, a rigid steel platen, four magnetorheological (MR) dampers, and protected high-tech equipment. One of the MR dampers is physically tested in the laboratory while the remainders are numerically simulated. In order to consider the effect of input excitation characteristics on the isolation performance, the smart base-isolated raised floor system is assumed to be located at the roof of a building and the ground level. Four control algorithms are designed for the MR dampers including passive-on, switching, modified switching, and fuzzy logic control. Six artificial spectrum-compatible input excitations and three slope angles of the isolation devices are considered in the RTHS. Experimental results demonstrate that the incorporation of semi-active control into a base-isolated raised floor system is effective and feasible in practice for high-tech industry.

• 대한토목학회논문집
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• 제28권5A호
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• pp.685-690
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• 2008

최근 대규모의 지진피해로 인해 내진설계에 대한 관심이 높아지면서, LRB(Lead Rubber Bearing), FPS(Friction Pendulum System) 등 다양한 지진격리장치에 대한 연구가 진행되고 있다. 본 연구에서 E-Shape 강재이력댐퍼를 이용한 지진격리장치의 성능 평가를 위해 E-Shape 댐퍼의 동적거동 실험을 수행하였으며, 이를 바탕으로 해석적 연구를 위한 수치모델을 제안하였다. 또한, 제안된 E-Shape 강재이력댐퍼의 수치모델을 6자유도를 가진 5층 건물에 적용하여 LRB 시스템과 이력거동을 비교하여 지진격리성능 평가를 수행하였다. 본 연구를 통하여 제안된 수치모델은 실제 E-Shape 강재이력댐퍼의 동적거동을 적절히 묘사할 수 있으며, E-Shape 강재이력댐퍼는 비선형 거동을 통한 에너지를 적절히 소산시킴으로서 기존 시스템과 비교하여 충분히 지진격리성능을 발휘할 수 있을 것으로 사료된다.

• 한국시뮬레이션학회논문지
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• 제22권4호
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• pp.93-98
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• 2013

본 논문에서는, 초고집적과 초고내압 MOSFET를 위한 높은 임계전압에서 제안한 구조의 얕은 트랜치 접합 격리 구조에 대한 시뮬레이션 하였다. 열전자 스트레스와 열 손상의 유전 강화 전계의 물리적 기본 모델들은 주위 온도와 스트레스 바이어스의 넓은 범위에 걸친 집적화된 소자들에 있어서 분석하는 전기적의 목표인 TCAD 툴을 이용하였다. 시뮬레이션 결과, 얕은 트랜치 접합 격리 구조가 수동적인 전기적 기능 일지라도, 소자의 크기가 감소됨에 따라서, 초대규모 집적회로 공정의 응용에서 제안된 얕은 트랜치 격리 구조가 전기적 특성에서 전위차, 전계와 포화 임계 전압이 높게 나타났다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.34-36
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• 2008

This paper is given a full detail of mathematical analyses of input current for novel active type power factor correction(PFC) AC-DC converter of step up-down added electric isolation. These are compared with harmonics components of input current for a conventional PFC converter of electric isolation type. The proposed PFC converter is constructed in using a new loss-less snubber circuit to achieve a soft switching of control device. Also the proposed converter for discontinuous conduction mode(DCM) eliminates the complicated circuit control requirement and reduces the size of components. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of ac input voltage under the constant duty cycle switching. Therefore, input power factor is nearly unity and the control method is simple. Particularly, the stored energy of loss-less snubber capacitor is recovered with input side and increases input current from resonant operation. The result is that input power factor of the proposed converter is higher than that of a conventional PFC converter. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• 설비공학논문집
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• 제24권11호
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• pp.806-812
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• 2012

Air curtains are widely used in commercial and public buildings to replace solid doors where traffic of people is predicted. At doorways where the solid door is open continuously or intermittently, an air curtain may be installed in order to reduce the flow of heat and moisture from the enclosed space to the outside. The purpose of this paper is to predict isolation performance of the single-sided air curtain when the wind is blowing. For the study, a numerical simulation is used to find the influence of various jet velocities on the efficiency of the single-sided air curtain device which is mounted at the side of the doorway. The isolation performance of the single-sided air curtain is evaluated by sealing efficiency which provides the assessment of the infiltration air ratio. According to the result of this study, the single-sided air curtain has lower sealing efficiency than downward-blowing air curtain. Therefore, for energy conservation in heating space, the single-sided air curtain is not recommended because of its low effectiveness.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.1380-1385
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• 2004

In this paper, auto-tuning technique of the PID controller gain by particle swarm optimization algorithm is presented. PID controller is easy to implement to numerous control systems. After PID gain tuning is completed, its result could be implemented to control spacecraft vibration such as jitter that is high frequency vibration usually over 10Hz. The off-line PID controller tuning is done under system nonlinearities and uncertainties existence, then its result is applied to control experiment device to prove the PSO efficiencies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.