• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2184-2186
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• 2005

Neutron production is very important to apply fusion energy through SCBF(Spherically Convergent Beam Fusion) device and its rate is Proportional to the square of the ion current$({\propto}I^2)$. Also the ion current has a close relation with the potential well structure in grid cathode. In this paper, the ion current is calculated for the increasement of neutron production rate in a variety of grid cathode geometry. The atomic and molecular collision are taken into account by Monte Carlo Method and Potential is calculated by Finite Element Method. Main processes of the discharge is the ionization of $D_2$ by fast $D_2^+$ ion. As the number of a cathode ring is small and gap distance decreases, the ion current increases and neutron production rate will increase.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.394-397
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• 1999

Impact ionization, which is a kind of a carrier-carrier interaction process occurring in a semiconductor under the influence of a high electric field, is necessary to analyse carrier transport properties. Since the parabolic or nonparabolic E-k relation is different from real band structure in high energy range, exact model of impart ionization have been presented using full band I-k relation and Fermi's golden rule. We have investigated relation of density of states, energy band structure and overlap integral. We make use of empirical pseudopotential method in order to calculate energy band structure of silicon, tetrahedron method in order to calculate density of states. We know density of states very depends on energy band structure and overlap integral depends on the primary electron energy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Korean Journal of Pharmacognosy
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• v.48 no.4
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• pp.320-328
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• 2017

Yongdamsagan-tang has been used to treat the urinary disorders, acute- and chronic-urethritis, and cystitis in Korea. In this study, an ultra-performance liquid chromatography-electrospray ionization-mass spectrometry (UPLC-ESI-MS/MS) method was established for simultaneous analysis of the 20 bioactive marker compounds, geniposidic acid, chlorogenic acid, geniposide, liquiritin apioside, acteoside, calceolarioside B, liquiritin, nodakenin, baicalin, liquiritigenin, wogonoside, baicalein, glycyrrhizin, wogonin, glycyrrhizin, wogonin, saikosaponin A, decursin, decursinol angelate, alisol B, alisol B acetate, and pachymic acid in traditional herbal formula, Yongdamsagan-tang. Chromatographic separations of all marker compounds were conducted using a Waters Acquity UPLC BEH $C_{18}$ analytical column ($2.1{\times}100mm$, $1.7{\mu}m$) at $45^{\circ}C$ using a mobile phase of 0.1% (v/v) formic acid in water and acetonitrile with gradient elution. The MS analysis was performed using a Waters ACQUITY TQD LC-MS/MS coupled with an electrospray ionization source in the positive and negative modes. The flow rate was 0.3 mL/min and injection volume was $2.0{\mu}L$. The correlation coefficient of 20 marker compounds in the test ranges was 0.9943-1.0000. The limits of detection and quantification values of the all marker components were 0.11-6.66 and 0.34-19.99 ng/mL, respectively. As a result of the analysis using the optimized LC-ESI-MS/MS method, three compounds, geniposidic acid (from Plantaginis Semen), alisol B (from Alismatis Rhizoma), and pachymic acid (from Poria Sclerotium), were not detected in this sample. While the amounts of the 17 compounds except for the geniposidic acid, alisol B, and pachymic acid were $0.04-548.13{\mu}g/g$ in Yongdamsagan-tang sample. Among these compounds, baicalin, bioactive marker compound of Scutellariae Radix, was detected at the highest amount as a $548.13{\mu}g/g$.

• Korean Journal of Pharmacognosy
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• v.47 no.1
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• pp.92-101
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• 2016

In this study, an ultra-performance liquid chromatography-electrospray ionization-mass spectrometry (UPLC-ESI-MS/MS) method was established for simultaneous determination of the 25 marker components, including chlorogenic acid, gallic acid, oxypaeoniflorin, homogentisic acid, methyl gallate, caffeic acid, 3,4-dihydroxybenzaldehyde, paeoniflorin, albiflorin, liquiritin, nodakenin, ferulic acid, ginsenoside Rg1, liquiritigenin, coumarin, cinnamic acid, benzoylpaeoniflorin, ginsenoside Rb1, cinnamaldehyde, paeonol, glycyrrhizin, 6-gingerol, evodiamine, rutecarpine, and spicatoside A in traditional Korean formula, Onkyung-tang. All analytes were separated on a Waters Acquity UPLC BEH $C_{18}$ analytical column ($2.1{\times}100mm$, $1.7{\mu}m$) at $45^{\circ}C$ using a mobile phase of 0.1% (v/v) formic acid in water and acetonitrile with gradient elution. The MS analysis was carried out using a Waters ACQUITY TQD LC-MS/MS coupled with an electrospray ionization (ESI) source in the positive and negative modes. The flow rate and injection volume were 0.3 mL/min and $2.0{\mu}L$, respectively. The correlation coefficient of all analytes in the test ranges was greater than 0.98. The limits of detection and quantification values of the 25 marker compounds were in the ranges 0.03-19.43 and 0.09-58.29 ng/mL, respectively. As a result, methyl gallate, 3,4-dihydroxybenzaldehyde, evodiamine, and rutecarpine were not detected in this sample and the concentrations of the 21 compounds except for the above 4 compounds were $33.09-3,496.32{\mu}g/g$ in Onkyung-tang decoction. Among these compounds, paeonol was detected at the highest amount as a $3,496.32{\mu}g/g$.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.331-340
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• 2010

3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.121-126
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• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.874-877
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• 2002

The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.238-238
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• 1999

현대 AC-PDP(Plasma Display Panel)의 유지전극 구조는 공면 전극구조를 가지고 있다. 공면 전극구조하에서 Ne-Xe 혼합가스에 대한 이온화율 측정을 시도하였다. 일정한 전극 간격을 가지고 있는 공면 전극 구조에서 암전류와 방전류를 측정함으로써 이온화율을 측정하였다. 본 실험의 결과를 통하여 압력으로 규격화된 전기장에 대하여 압력으로 규격화된 이온화율을 나타낼 수 있으며 단일 가스에 대한 이온화율과 혼합값에 대한 이온화율을 비교할 수 있으며 실제 PDP구조하에서의 이온화율을 적용할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.