• Nuclear Engineering and Technology
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• v.26 no.4
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• pp.461-470
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• 1994

Sorption experiments of $^{60}$ Co, $^{85}$ Sr. and $^{137}$ Cs onto sandstone particles in a batch were carried out to investigate the migration mobility. Sorption kinetics and reversibility as well as sorption mechanisms were examined. Sorption reaction occurred mostly within 10 hours on the outer surface of the sandstone particle but diffusion into the inner surface of the mineral has still occurred after that time. In order to distinguish sorption types of radionuclides, a sequential chemical extraction was introduced. The sorbed radionuclides were then extracted by applying different solutions of synthetic groundwater, CaCl$_2$, KCl and KOX-HA Especially KCl is adopted to extract the ion-exchanged cesium. Sorption types considered are reversible sorption under groundwater condition, ion exchange, association with ferro-manganese oxides or oxyhydroxides, and irreversible fixation. Strontium sorbs onto the sandstone surface mainly by fast and reversible ion exchange reaction. However, cobalt and cesium do not sorb by simple process. The main sorptive binding of cobalt was the association with ferro-manganese oxides and the secondary one was irreversible fixation. Diffusion into the lattice of minerals controlled the sorption rate of cobalt The main sorptin type of cesium was irreversible fixation, while ion exchange reaction was the secondary importance. Hence the oreder of migration mobility for the three radionuclides was Sr$^{2＋}$ ＞ Co$^{2＋}$ ＞ Cs$^{＋}$ in the sandstones.

• Journal of Soil and Groundwater Environment
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• v.20 no.6
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• pp.28-36
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• 2015

Simultaneous mobility reduction of explosives and heavy metals in an operational range by monopotassium phosphate (MKP) and bentonite spreading technology was investigated. Potassium ion and phosphate ion in MKP act as explosives sorption enhancer and insoluble heavy metal phosphate formation, respectively, while bentonite acts as the explosives adsorbent. Then, the decrease in surface water concentration of the pollutants and resulting risk reduction for local residents of the operational range, by MKP/bentonite application was estimated. Under untreated scenario, the noncancer hazard index (HI) exceeded unity on February, July and August, mainly due to 2,4,6-trinitrotoluene (TNT); however, MKP/bentonite treatment was expected to lower the noncancer hazard index by decreasing the surface water concentration of explosives and heavy metals (especially TNT). For example, on July, estimated surface water concentration and HI of TNT were 0.01 mg/L and 1.1, respectively, meanwhile the sorption coefficient of TNT was 3.9 mg¹⁻ⁿkg⁻¹Lⁿ. However, by MKP/bentonite treatment, the TNT sorption coefficient increased to 113.8 mg¹⁻ⁿkg⁻¹Lⁿ and the surface water concentration and HI decreased to about 0.002 mg/L and 0.2, respectively. Based on the result, it can be concluded that MKP/bentonite spreading is a benign technology that can mitigate the risk posed by the pollutants migration from operational ranges.

• Journal of Surface Science and Engineering
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• v.27 no.2
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• pp.65-73
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• 1994

Effects of deposition parameter on the ionic conductivity and structural change of the Lithium borosili-cate solid electrolyte films, prepared by rf sputtering using 7$LI_2O-3B_2O_3-1SiO_2$ single phase target and also a mosaic target enriched with $LI_2O$, were analyzed by measuring AC impedance and IR absorption spectra for the films. Thed solid electrolyte film deposited from the single phase target exhibited very low ionic conductivi-ty of $10^{-10}{\Omega}^{-1}cm{-1}$ at room temperature, a result of low $Li^+$ ion content(7.52 at%) in the film. The $Li^+$ con-ductivity for the films deposited from the mosaic target, however, significantly increased to $10^{-7}{\Omega}^{-1}cm{-1}$ due to both an increased $Li^+$content (14.75 at %) and a structural change of the films. The increased ionic conduc-tivity of the film appears to be associated with an easiness of ionic mobility by structural change of glassy film from a some close packed network structure to a open one. These structural changes of film were found to be closely related to the increase in the peak intensity at~$960cm^{-1}$ of IR absorption spectra for the glassy films. With increasing either argon pressure from 3 to 21 mtorr or rf power from 2 to 3 W/$cm^2$, the $Li^+$ conduc-tivity for the films significantly increased to an order of $10^{-6}{\Omega}^{-1}cm{-1}$ due to an increase in openness of film structure, as confirmed by both an increase in the IR absorption peak intensity at ~$960cm^{-1}$ and a resultant reduction of activation energy for mobility of $Li^+$ ion.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1040-1044
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• 1995

Magnetic garnet films of (YSmLuCa)$_3$(FeGe)$\_$5/O$\_$12/ have been grown by the liquid phase eqitaxy method on the substrate of non-magnetic garnet Gd$_3$Ga$\_$5/O$\_$12/. The variation of Sm ion concentration were varied 0.3, 0.4, 0.6, mole/formula unit respectively. The magnetic properties of the samples for the bubble magnetic materials, such as, line width ΔH of ferromagnetic resonance (FMR), magnetic saturation induction 4$\pi$Ms, wall mobility u$\_$w/ uniaxial magnetic anisotropy energy Ku, were measured and discussed the relations between these properties. The line width ΔH decreases with increasing 4$\pi$Ms, and with decreasing Sm concentration. The anisotropy energy Ku increases not only with increasing Sm ion concentration, but also increasing 4$\pi$Ms. The value of wall mobility u$\_$w/ increase with increasing 4$\pi$Ms and decreases with increasing Sm concentration. We define a physical constant Eι from the fact that the product of 4$\pi$Ms and ΔH is constant with dimension of energy density. The Eι is dependent only on Sm concentration.density. The Eι is dependent only on Sm concentration.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.45-50
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• 2023

Microfluidic preconcentration technologies, which collect or extract low-abundance analytes in a specific location, have been spotlighted in various applications such as medical and bio-engineering. Here, we conducted extensive studies on the variables to be considered when concentrating target samples based on electrophoresis in an electromembrane system utilizing an ion exchange membrane. Using negatively charged Alexa Fluor 488 and positively charged Rhodamine 6G as fluorescent dyes, we examined the effects of flow velocity of the main channel, channel electrolyte concentration, and applied voltage on sample preconcentration. As a result, it was found that the preconcentration of the target sample occurs much better when the flow velocity is slow and the concentration of the main channel containing the sample is high, given that the channel concentration ratio (main and buffer) is constant. In addition, based on the experimental data acquired in this study, the electrophoretic mobility values of Alexa Fluor 488 and Rhodamine 6G were experimentally calculated and compared.

• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.622-627
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• 2013

Colloidal silica is used in various industrial products such as chemical mechanical polishing slurry for planarization of silicon and sapphire wafer, organic-inorganic hybrid coatings, binder of investment casting, etc. An accurate determination of particle size and dispersion stability of silica sol is demanded because it has a strong influence on surface of wafer, film of coatings or bulks having mechanical, chemical and optical properties. The study herein is discussed on the effect of measurement results of average particle size, sol viscosity and electrophoretic mobility of particle according to the volume fraction of eight types of silica sol with different size and surface properties of silica particles which are presented by the manufacturer. The measured particle size and the mobility of these sol were changed by volume fraction or particle size due to highly active surface of silica particle and change of concentration of counter ion by dilution of silica sol. While in case the measured sizes of small particles less than 60 nm are increased with increasing volume fraction, the measured sizes of larger particles than 60 nm are slightly decreased. The mobility of small particle such as 12 nm are decreased with increase of viscosity. However, the mobility of 100 nm particles under 0.048 volume fraction are increased with increasing volume fraction and then decreased over higher volume fraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.