• 제목/요약/키워드: ion source

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Arc Ion Plating Deposition System의 Bias 종류에 따른 TiN 박막의 특성평가

  • 김왕렬;박민석;김대영;김현승;권민철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.208-208
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    • 2012
  • 최근 환경문제가 많이 제기되면서 친환경적 운송수단인 자전거 개발과 관련하여 다양한 기술개발이 이루어지고 있다. 그 중 고부가가치의 서스펜션 포크의 프레임에 고기능성 표면처리로 Arc ion plating deposition system (AIPDS)을 이용하여 부식, 내마모 특성이 뛰어난 TiN 박막을 증착시켰다. AIPDS는 기존의 arc system과 달리 다원계 소재 코팅 공정조건 확립을 위하여 chamber wall에 2개의 rectangular type sputter source를 장착하고 소재의 pre-treatment 용 linear type ion source를 설치하였다. 장비의 Chamber 중앙에는 pipe형 arc cathode를 설치하였으며, 그 주위를 anode 역할을 하는 copper 코일로 감아 이는 발생한 arc를 target인 cathode 축을 중심으로 방향성을 가지고 회전하여 진행 할 수 있도록 유도 하였다. 이 시스템에서 증착된 TiN 박막은 bias 전압 변화에 따른 박막의 구조 및 물성을 평가하였다. XRD 장비를 통하여 TiN 박막의 상분석을 진행하였고, 마모테스터, 원자현미경, 마이크로 비커스 경도기 등을 이용하여 기계적 특성을 평가하였다.

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액체 금속 이온원의 빔 안정도 향상 (Beam stability improvement of a liquid metal ion source)

  • 현정우;임연찬;김성수;박철우;이종항;강승언
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.504-507
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    • 2004
  • Previous studies on the liquid Gallium ion sources used an electro-chemically etched tungsten wire with a coil-type heater. Such a structure requires excessive power consumption in the course of heating the liquid metal. In this work, a new structure is proposed that replaces the coil-type heater. It uses a Gallium reservoir made of six pre-etched 250 $\mu\textrm{m}$ tungsten wires that surround the needle electrode. Gallium loading at the reservoir is observed to be much more stable, resulting in an improved beam stability.

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KSTAR 중성입자빔 수송라인 해석 (An Analysis on the KSTAR neutral beam injection line)

  • 임기학;김진춘;권경훈;조승연
    • 한국진공학회지
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    • 제8권4B호
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    • pp.556-564
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    • 1999
  • The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

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아르곤 이온빔을 이용한 CNT 페이스트 에미터의 표면처리에 관한 연구 (A Study on the Surface Treatment of CNT Paste Emitter by Ar Ion Irradiation)

  • 권상직
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.456-461
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    • 2007
  • In this study, a surface treatment method using accelerated Ar ions was experimented for exposing the carbon nanotubes (CNT) from the screen-printed CNT paste. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposed by UV light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy, bombardment time, and the power of RF plasma ion source. When Ar ions accelerated with 100 eV energy from the 100 W RF plasma source are bombarded on the CNT paste surface for 10 min, the emission level and the uniformity were best.

플라즈마 소스 이온주입용 플라즈마원의 이온 분석 (Ion composition analysis of plasma sources for PSII)

  • 김광훈;;이홍식;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.2044-2046
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    • 2000
  • A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.

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Urgency of LiFePO4 as cathode material for Li-ion batteries

  • Guo, Kelvii Wei
    • Advances in materials Research
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    • 제4권2호
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    • pp.63-76
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    • 2015
  • The energy crisis involving depletion of fossil fuel resource is not the sole driving force for developing renewable energy technologies. Another driving force is the ever increasing concerns on the air quality of our planet, associated with the continuous and dramatic increase of the concentration of greenhouse gas (mainly carbon dioxide) emissions. The internal combustion engine is a major source of distributed $CO_2$ emissions caused by combustion of gasoline derived largely from fossil fuel. Another major source of $CO_2$ is the combustion of fossil fuels to produce electricity. New technologies for generating electricity from sources that do not emit $CO_2$, such as water, solar, wind, and nuclear, together with the advent of plug-in hybrid electric vehicles (PHEV) and even all-electric vehicles (EVs), offer the potential of alleviating our present problem. Therefore, the relevant technologies in $LiFePO_4$ as cathode material for Li-ion batteries suitable to the friendly environment are reviewed aim to provide the vital information about the growing field for energies to minimize the potential environmental risks.

아날로그 - 디지털 스위칭 혼합형 저 리플- 고 효율 Li-Ion 배터리 충전기 (Analog-Digital Switching Mixed Mode Low Ripple - High Efficiency Li-Ion Battery Charger)

  • 정상화;우영진;김남인;조규형
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 D
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    • pp.2531-2533
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    • 2001
  • This paper describes a low noise and high efficiency analog-digital switching mixed mode battery charger for production facilities of Li-Ion batteries. The requirements for battery chargers for production facilities are very strict. The accuracy of output voltage and output current should be below 0.1% with very low ripple current. Therefore analog type linear regulators are widely used for battery charger in spite of their inefficiency and bulkiness. We combined linear regulator as a voltage source with digital switching converter as a dependent current source. Low current ripple and high accuracy are obtained by linear regulator while high efficiency is achieved by digital switching converter. Experimental results show that proposed method has 0.1% ripple and 90% efficiency at an output current of 1A for a battery voltage of 4V.

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Investigation of Adhesion Mechanism at the Metal-Organic Interface Modified by Plasma Part I

  • Sun, Yong-Bin
    • 마이크로전자및패키징학회지
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    • 제9권4호
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    • pp.31-34
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    • 2002
  • For the mold die sticking mechanism, the major explanation is that the silica as a filler in EMC (epoxy molding compound) wears die surface to be roughened, which results in increase of adhesion strength. As the sticking behavior, however, showed strong dependency on the EMC models based on the experimental results from different semiconductor manufacturers, chemisorption or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2, N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic or vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.

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Reverse annealing of boron doped polycrystalline silicon

  • Hong, Won-Eui;Ro, Jae-Sang
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.140-140
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    • 2010
  • Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

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유도결합 플라즈마(ICP) source로 생성된 plasma 특성의 공정 변수 영향 (The Effects of Processing Parameters of Plasma Characteristics by Induced Coupled Plasma Source)

  • 이상욱;김훈;임준영;안영웅;황인욱;김정희;지종열;최준영;이영종;한승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.328-329
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    • 2006
  • 반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

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