• Smart Media Journal
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• v.12 no.1
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• pp.17-23
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• 2023

Design-For-Security (DFS) methodology is to protect integrated circuits from physical attacks, and that can be implemented by adding a security circuit to detect abnormal external access. Among the abnormal accesses called invasive attack, microprobing and FIB circuit editing are classified as the most powerful methods because they have direct access. Microprobing deliberately inject defects into the wire of circuit through probes, or reads and changes data. FIB circuit editing is methods of reconnecting or destroying circuits to neutralize security circuits or to access data. Previous DFS methodology have responded to the attacks by detecting arrival time asymmetry between the two signals or by comparing input/output data based on encrypted communication. This study conducted to reduce hardware overhead, and the proposed circuit detects the reflected signal asymmetry generated through probe or FIB circuit editing and detects the attacks through comparison. Since the proposed security circuit reduces the size and test cycle of the circuit compared to previous studies, the cost used for security can be reduced.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of Photoscience
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• v.11 no.1
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• pp.19-23
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• 2004

The sharp-line absorption spectrum of microcrystalline samples of cis-[Cr(cycb)$Cl_2$]Cl (cycb=rac-5,5,7,12,12,14-hexamethyl-1,4,8,11-tetraazacyclotetradecane) has been measured between 13000 and $16000 cm^{-1}$ at temperatures down to 5K. The 77K emission and excitation spectra, and 298 K infrared and visible absorption spectra have also been measured. The nine electronic bands due to spin-allowed and spin-forbidden transitions were assigned. Using the observed transitions, a ligand field analysis has been performed to probe the ligand field properties of coordinated atoms in the title chromium(III) complex. The zero-phonon line in the sharp-line absorption spectrum splits into two components by $240 cm^{-1}$ , and the $large ^2$$_E{g}$ splitting can be reproduced by the modem ligand field theory. It is confirmed that nitrogen atoms of the macrocyclic cycb ligand have a strong $\sigma$-donor character, but chloride ligand has weak $\sigma$- nd $\pi$-donor properties toward chromium(III) ion.n.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.3
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• pp.289-295
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• 2005

Instrumentation and Control (I&C) of the Neutral Beam Test Stand (NB- TS) Facility at the Korea Atomic Energy Research Institute (KAERI) for the Korea Superconducting Tokamak Advanced Research (KSTAR) project has been underway since the start of the project to answer the diverse requests arising from the various facets of the development and construction phases of the project. Optical signal transmission constitutes a significant portion of I&C works and has been performed for the entirety of the project. During the NB- TS construction and related experiments, significant achievements to a more accurate as well as more refined optical signal transmissions have been made. Examples of those I&C works that utilized the optical signal transmission are the Langmuir probe signal transmission, gradient grid current signal transmission, gas flow control and signal transmission, ion source temperature measurement, beam line component temperature monitoring, and coolant flow signal transmission, etc. These optical signal transition provisions are now performing part of the indispensable functions for the proper operation of the NB- TS facility. Attained experience and expertise are expected to be well applied to the upcoming main neutral beam injection (NBI) system construction for the KSTAR project.

• Corrosion Science and Technology
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• v.14 no.2
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• pp.85-92
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• 2015

An on-line corrosion rate measurement system was developed using a personal computer, a data acquisition board and program, and a 2-electrode corrosion probe. Reliability of the developed system was confirmed with through comparison test. With this system, the effect of sodium nitrite ($NaNO_2$) as a corrosion inhibitor were studied on iron and aluminum brass that were immersed in sodium chloride (NaCl) solution. Corrosion rate was measured based on the linear polarization resistance method. The corrosion rates of aluminum brass and iron in 1% NaCl solutions were measured to be 0.290 mm per year (mmpy) and 0.2134 mmpy, respectively. With the addition of 200 ppm of $NO{_2}^-$, the corrosion rates decreased to 0.0470 mmpy and 0.0254 mmpy. The addition of $NO{_2}^-$ caused a decrease in corrosion rates of both aluminum brass and iron, yet the $NO{_2}^-$ acted as a more effective corrosion inhibitor for iron. than aluminum brass.

• Tribology and Lubricants
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• v.18 no.4
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• pp.267-272
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• 2002

Nano adhesion between SPM(scanning probe microscope) tips and DDPO$_4$(octadecylphosphoric acid ester.) and ODPO$_4$(octadecylphosphoric acid ester) SAM(self-assembled monolayer.) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes with the applied normal load. DDPO$_4$ and ODPO$_4$ SAM were formed on Ti and TiOx surfaces. Ti and TiOx were coated on the Si wafer by ion sputtering. Adhesion and friction of DDPO$_4$ and ODPO$_4$ SAM surfaces were compared with those of OTS(octadecyltrichlorosilane) SAM and DLC surfaces. DDPO$_4$ and ODPO$_4$ SAM converted the Ti and TiOx surfaces to be hydrophobic. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare surfaces. Work of adhesion was also discussed to explain how the surface was converted into hydrophobic Results also showed that tribological characteristics of DDPO$_4$ and ODPO$_4$ SAM had good properties in the adhesion, friction, wetting angle and work of adhesion. DDPO$_4$ and ODPO$_4$ SAM could be one of the candidates for the bio-MEMS elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.250.2-250.2
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• 2015

결정질 태양전지의 변환효율은 이미 이론적 한계에 가까워져, 최근 산업에서는 이 대신 제조공정 단가를 낮추려는 연구가 진행되고 있다. 본 연구에서는 태양전지 도핑공정에 대기압 DBD 플라즈마를 응용하여 저렴하게 태양전지를 제작할 수 있는 방법을 모색한다. 대기압 DBD 플라즈마를 발생시키기 위해 DC-AC 인버터 구조의 전원을 사용하여 수십 kHz의 주파수, 수 kV의 전압을 인가하여 $5cm{\times}1cm$ 직사각형 모양의 아노다이징된 알루미늄 전극을 사용하였다. 전극과 Ground 사이에 Argon 가스를 주입하여 플라즈마를 발생시켰으며, 출력전류는 수십 mA의 전류가 측정되었다. $3cm{\times}3cm$의 P-type wafer에 스핀코팅 방식으로 H3PO4를 도포한 후, Wafer 표면에 플라즈마를 조사하여 대기압 DBD 플라즈마를 이용한 태양전지 도핑 가능성을 확인하였다. 플라즈마 출력 전류와 플라즈마 조사시간을 변수로 도핑된 Wafer의 특성을 확인하였다. 도핑 프로파일은 SIMS (Secondary Ion Mass Spectrometry)를 통해 측정하였으며, 전기적인 특성은 4 point probe로 면저항을 측정하였다. 대기압 DBD 플라즈마를 이용해 도핑된 wafer에 전극을 형성하여, 같은 도펀트를 사용하여 Furnace로 열 확산법을 이용해 도핑 공정을 진행한 wafer와 변환효율(Conversion efficiency)을 측정하여, 대기압 플라즈마를 이용한 도핑 가능성을 확인하였다.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.2
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• pp.95.2-95.2
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• 2013

The Van Allen Probes were designed to study the Earth's radiation belts on various scales of space and time. The identical two spacecrafts going nearly eccentric orbits lap each other several times over the course of the mission and each probe carries five instrument suites to address the science objectives on the radiation belt. Since Van Allen Probes launched on August 30, 2012, the probes detecte several storm events up to now. To understand the particle acceleration and loss mechanism in the radiation belt, we first focus on the energetic electrons' dynamics detected by ECT (Energetic Particle, Composition, and Thermal Plasma Suite). ECT measures near-Earth space's radiation particles covering the full electron and ion spectra from ~ eV to 10's of MeV with sufficient energy resolution. In this paper, we present the preliminary results of the recent several storm events using electron data from ECT(MagEIS and REPT).