• Journal of the Korean Society for Precision Engineering
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• 제24권11호
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• pp.108-115
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• 2007

We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.184-188
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• 2000

We have fabricated directly-coupled single-layer second-order high-Tc SQUID gradiometer. The gradiometer consisted of 3 parallel-connected square pickup loops, and each loop was directly coupled to SQUID. YBCO thin film was deposited by pulsed laser deposition and patterned by photolithography with ion milling technique. Optimum balancing condition was achieved by varying the outer diameter of the center loop. We have investigated nearly zero response of the SQUID to uniform and 1 st-order field gradient.

• Progress in Superconductivity
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• 제3권2호
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• pp.146-150
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• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• Progress in Superconductivity
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• 제3권2호
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• pp.163-167
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• 2002

We have fabricated planar-type single-layer second-order high-Tc SQUID gradiometers. The devices consisted of symmetrically designed three parallel-connected square pickup loops that were directly coupled to the SQUID. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ substrate by a PLD system and patterned into a device by the photolithography with ion milling technique. Junctions of the SQUID were either step-edge or bicrystal type. All the structures were formed on a 10 mm $\times$ 5 mm substrate. Balancing of the gradiometer was achieved by adjusting the width of the central pickup loop. The gradiometer noise was measured both inside and outside a magnetically shielded room. Details of the results will be discussed.

• Progress in Superconductivity
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• 제1권2호
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• pp.95-98
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• 2000

We have studied critical currents of $YBa_2Cu_3O_7$ step-edge junctions with different step orientations with respect to the major axes of $SrTiO_3$ (100) substrates. The junctions were prepared by pulsed laser deposition and argon ion milling with photoresist mask. We investigated current-voltage characteristics and critical current of the junctions as a function of the angle. The junction critical current showed an angle dependent modulation with maxima near 0 or 90 degree and minima near 45 and 135 degrees. The experimental results were analyzed based on the microstructure of the junction along the step and the d-wave symmetry of $YBa_2Cu_3O_7$ superconductor.

• Progress in Superconductivity
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• 제3권1호
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• pp.60-64
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• 2001

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.51-54
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.242-245
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• Korean Journal of Materials Research
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• 제11권4호
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• pp.294-299
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• 2001

Effects of the surface fluorination on the electrochemical charge-discharge properties of $Mg_2$Ni electrode in Ni-MH batteries fabricated by mechanical alloying were investigated. After 20h ball milling, Mg and Ni powder formed nanocrystalline $Mg_2$Ni. Discharge capacity of this alloy increased greatly at first one cycle, but due to the formation of Mg(OH)$_2$ passive layer, it showed a rapid degradation in alkaline solution within 10cyc1es. In case of 6N KOH +xN KF electrolyte (x = 0.5, 1, 2), a continuous and stable fluorinated layer formed by adding excess F$^{[-10]}$ ion, increased durability of $Mg_2$Ni electrode greatly and high rate discharge capability(90-100mAh/g). 2N KF addition led to the highest durability of all tested here. The reason of the improvement is due to thin MgF$_2$, which can prevent the $Mg_2$Ni electrode from forming Mg(OH)$_2$layer that is the main cause of degradation.

• Journal of the Korean Magnetics Society
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• 제25권4호
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.