• Nuclear Engineering and Technology
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• 제33권1호
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• pp.83-92
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• 2001

The properties of off-gas generated from vitrification process of ion-exchange resin were characterized. Theoretical composition and flow rate of the off-gas were calculated based on chemical composition of resin and it＇s burning condition inside CCM. The calculated off-gas flow rate was 67.9Nm$^3$/h at the burning rate of 40kg/h. And the composition of off-gas was avaluated as $CO_2$(41.4%), steam(40.0%), $O_2$(13.3%), NO(3.6%), and SO$_2$(1.6%) in order. Then, actual flow rate and composition of off-gas were measured during pilot-scale demonstration tests and the results were compared with theoretical values. The actual flow rate of off-gas was about 1.6 times higher than theoretical one. The difference between theoretical and actual flow rates was caused by the in-leakage of air to the system, and the in-leakage rate was evaluated as 36.3Nm$^3$/h. Because of continuous change in the combustion parameters inside CCM, during demonstration tests, the concentration of toxic gases showed wide fluctuation. However, the concentration of CO, a barometer of incompleteness of combustion inside CCM, was stabilized soon. The result showed quasi-equilibrium state was achieved two hours after feeding of resin.

• 전자공학회논문지D
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• 제35D권7호
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• pp.94-101
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• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.239-239
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• 2013

For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1697-1699
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• 2004

In this investigation, we have studied the diffusion of the $Cu^+$ ion in the Cu/Ta/SiOCH/Si and Cu/Ta/$SiO_2$/Si MIS-C structure. The Cu ions diffusion into the Ta barrier and SiOCH was examined by shift in flatband voltage of capacitance-voltage measurement and leakage current of current-voltage measurement. These evalution indicated that $Cu^+$ ion diffusion rate in Ta/SiOCH is considerably lower then the Ta/$SiO_2$ structure. And diffusion barrier Ta(50[nm]) is useful barrier against $Cu^+$ ion diffusion up to 450$^{\circ}C$.

• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• 전자공학회논문지A
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• 제33A권7호
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• pp.134-142
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• 1996

The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.49-53
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• 2010

Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

• 한국통신학회논문지
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• 제15권3호
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• pp.252-259
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• 1990

本 論文은 기존 LOCOS工程의 張點을 모두 겸비한 側面璧 SWAMI 技術에 대한 새로운 構造를 提示한다. 새로운 SWAMI공정은 순수 窒化膜 壓力과 體積 膨腸에 기인한 壓力을 크게 줄이기 위해서 側面璧 주위에 얇은 질화막과 反應性이온 飾刻으로 기울어진 실리콘 측면벽을 結合시켰따. 製作된 結果에 의하면, 缺陷이 없는 완전히 새부리 모양이 形成되지 않는 局地的 酸化 공정은 기울어진 面의 異方性 산화 隔離에 의해 實現시킬 수 있었다. 추가적인 마스크 段階는 要求되지 않는다. 이 工程에서 PN 다이오드의 漏泄電流는 기존 LOCOS 공정 보다 減少되었다. 한편 가장자리 部位는 漏泄電流 密度에서 평편한 接合 부위 보다 높게 分析되었다.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2002년도 총회 및 춘계학술발표회
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• pp.254-257
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• 2002

The purposes of this research are to identify the source and to analyze the pathway of nitrate contamination in "cultural village", Jeungpyeong. In order to examine recharge processes and flow pattern that closely related to the influent of nitrate contaminant, the flow field was simulated and the oxygen and hydrogen stable isotopes were analyzed. The nitrogen isotope was used to delineate contaminant sources. The shallow groundwater was mainly composed of precipitation, but leakage of domestic water and sewage contributed to the recharge. Nitrate contaminants were possibly from the leakage of sewage and animal waste. The nitrate concentration decreased due to dilution by low concentration water.ion water.

• 전자공학회논문지D
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• 제34D권9호
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.