• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.19-19
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• 2008

• Journal of Periodontal and Implant Science
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• v.28 no.2
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• pp.281-291
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• 1998

Chitosan is a biodegradable and non-toxic material with a molecular weight of 800-1,500Kd which can be obtained in various forms with extraordinary chemical structures and biological characteristics of which enables it to be used in many fields as a biomaterial. Ion irradiation is a useful tool to modify chemical structures and physical properties of high molecular weight polymers. The basic hypothesis of this study is that when surface properties of chitosan in a sponge form are modified with ion beam-irradiation and cell adhesion properties of chitosan would improve and thereby increase the regenerative ability of the damaged bone. The purpose of this study was to illuminate the changes in the cytocompatibility of chitosan sponges after ion beam-irradiation as a preliminary research. Argon($Ar^+$) ions were irradiated at doses of $5{\times}10^{13}$, $5{\times}10^{15}$ at 35 keV on surfaces of each sponges. Cell adhesion and activity of alkaline phosphatases were studied using rat fetal osteoblasts. The results of this study show hat ion beam-irradiation at optimal doses($5{\times}10^^{13}\;Ar^+\;ion/cm^2$) is a useful method to improve cytocompatibility without sacrificing cell viability and any changing cell phenotypes. These results show that ion beam-irradiated chitosan sponges can be further applied as carriers in tissue engineering and as bone filling materials.

• Nuclear Engineering and Technology
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• v.47 no.3
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• pp.323-331
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• 2015

Zirconium alloys are widely used in nuclear reactors as structural materials. During the operation, they are exposed to fast neutrons. Ion irradiation is used to simulate the damage introduced by neutron irradiation. In this article, we briefly review the neutron irradiation damage of zirconium alloys, then summarize the effect of ion irradiation on microstructural evolution, mechanical and corrosion properties, and their relationships. The microstructure components consist of dislocation loops, second phase precipitates, and gas bubbles. The microstructure parameters are also included such as domain size and microstrain determined by X-ray diffraction and the S-parameter determined by positron annihilation. Understanding the relationships of microstructure and properties is necessary for developing new advanced materials with higher irradiation tolerance.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.5-9
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• 2024

This study investigated the effect of Kr ion beam irradiation on the superconducting properties of Nb thin films, which are known for their high superconducting transition temperature (T_c) at ambient pressure among single elements. Using the Stopping and Range of Ions in Matter (SRIM) program, we analyzed the distribution of Kr ions and displacement per atom (DPA) after irradiation, finding a direct correlation between irradiation amount and DPA. In samples with stronger beam energy, deeper ion penetration, fewer ions remained, and higher DPA values were observed. X-ray diffraction (XRD) revealed that the Nb (110) peak at 38.5° weakened and shifted with increasing irradiation. T_c decreased in all samples after irradiation, more significantly in those with higher beam energy. Irradiation raised resistivity of the film and lowered the residual-resistivity ratio (RRR). AC susceptibility measurements were also consistent with these findings. This research could potentially lead to more efficient and powerful superconducting devices and a better understanding of superconducting materials.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Journal of Radiation Protection and Research
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• v.40 no.2
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• pp.87-91
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• 2015

We have employed X-ray photoelectron spectroscopy (XPS) technique to examine the combined effects of low-energy electron (LEE) irradiation and $Fe^{3+}$ ion on DNA damage. pBR322 plasmid DNA extracted from E. coli ER2420 was used for preparing DNA-$Fe^{3+}$ sample. The C1s XPS spectra were scanned for LEE-irradiated and LEE-unirradiated samples and then curve-fitted. For the samples with LEE irradiation only or with Fe ion only, no significant changes from pure DNA samples were observed - a single effect of either $Fe^{3+}$ ion or LEE irradiation did not cause a significant damage. However, when these two components were combined, the DNA damage was increased quite significantly, compared to the sum of DNA damages caused by $Fe^{3+}$ ion and by LEE irradiation independently. This observation is consistent with our previous results [Radiat. Res. 177, 775 (2012)] which was done using gel-electrophoresis technique. Partial interpretation of the observed spectrum peaks was also attempted.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.103-108
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• 2004

Carbon fiber reinforced composites(CFRP) were fabricated with phenolic resin matrix by hot press molding, and its surface was modified by the ion-assisted reaction process. When we tested the friction coefficient and wear rate variation and observed the effect of fibers with respect to friction and wear characteristics, the amount of pitch based carbon fiber was 45wt% and the average friction coefficient was the lowest at 0.12. When the amount of ion-irradiation was $1\times10^{l6}ions/cm^2$, the friction coefficient of the composites was about 0.12 and the wear mode was stable, whereas, the friction coefficient of the non-treated composites was about 0.16 and the wear mode was very unstable. But if the amount of ion-irradiation was $5\times10^{l6}ions/cm^2$$1\times10^{l6}ions/cm^2$ion-irradiation case.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.839-844
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• 2002

This letter focuses on the liquid crystal alignment characteristics according to the properties of hydrogenated amorphous carbon(a-C:H) thin film deposited by RPECVD(Remote Plasma Enhanced Chemical Vapor Deposition) method using $C_2H_2$ and He gases. The properties of the deposited thin films were controlled by the ion beam irradiation time and ion beam energy. The results show that not ion beam energy but ion beam irradiation time plays an important role in the properties of a-G:H thin films. As the ion beam irradiation time increases, not only the sp2 concentration in a-G:H thin films but also liquid crystal pretilt angle was varied.