• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.391-399
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• 1997

To figure out wheher the tribological properties of a hras-coating layer can be imporved by ion implantatio, TiN-coated SKD 11 61 were implanted with nitrogen ion and their wear peoperties were examined systematically. The amount of nitrgen ione implanted on the coating layer was $2 \times 10^{15},\;10^{16},\;10^{17},\;and\;10^{18}\;ions/\textrm{cm}^2$, respectively. X-ray diffraction revealed theintensity of the peaks belong TiN tended to increase as the ion dose increased, which implied that the implantation promoted the formation of TiN in the coated later. Howeverthe hardensity of the specimens increased then decreased again as the ion dose increased, resulting in a obvious drop of the hardness for the ion does of $2 \times 10^{18}\;ions/\textrm{cm}^2$<\TEX>. While the adhesion of the coated layer of SKD 61 was excllent regrdless of the implatation, the adhesion of the later of SKD 11 was apparently improved by the implantation. The overall wear properties of SKD 11 was better than that of SKD 61, and the best result was yielded at the ion dose of $2 \times 10^{15}\;ions/\textrm{cm}^2$<\TEX>.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Bulletin of the Korean Chemical Society
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• v.25 no.10
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• pp.1465-1470
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• 2004

A short and efficient synthesis, solvent extraction and potentiometric measurements of new thiazole-containing naphtho-crown ethers are reported. The naphthalene moiety enhances the ammonium ion selectivity over potassium ion. The selectivity of ${NH_4}^+/K^+$ follows the trend $3\;{\approx}\;2\;>\;1$, indicating that the differences in conformational changes of 2 and 3 in forming ammonium complexes affect little on the resulting ammonium/potassium extraction selectivity ratio. The ammonium ion-selective electrodes were prepared with noctylphenyl ether plasticized poly(vinyl chloride) membranes containing 1-4 the effect of one naphthalene unit introduced on either right (2) or left (3) side of thiazolo-crown ether on their potentiometric properties (e.g., ammonium ion selectivity over other cations, response slopes, and detection limits) were not apparent. However, the ammonium ion selectivity of 1, 2 and 3 over other alkali metal and alkaline earth metal cations is 10-100 times higher than that of nonactin.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.92-94
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• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.470-470
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• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.124-127
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• 2002

LC aligning capabilities and the variation of pretilt angles with ion beam irradiation on the a-C:H thin films, and electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the a-C:H thin film were studied. A high pretilt angle of $3.5{^{\circ}}$ via ion beam irradiation on the a-C:H thin film was measured. Also, the LC pretilt angle decreased due to the increase in surface roughness at over 2 min of IB exposure time. It is considered that this roughness increase due to increasing IB exposure time that generated destroy of oriented rings of atoms related to LC alignment. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the a-C:H thin film for 1 min can be achieved. Finally, the residual DC property of the ion beam aligned TN-LCD with ion beam exposure of 1 min on the a-C:H thin film is almost same as that of the rubbing aligned TN-LCD on a PI surface.

• Bulletin of the Korean Chemical Society
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• v.24 no.1
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• pp.116-118
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• 2003

• Journal of the Korean Chemical Society
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• v.62 no.4
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• pp.324-327
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• 2018

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.275-278
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• 2013