• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.482-486
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.100-105
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• 1998

This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.177-181
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• 2009

Compositional gradient CrNx coatings were fabricated using arc ion plating in Ar/$N_2$ gaseous mixture by gradually increasing $N_2$ flux rate from 0 to 120 SCCM. The effect of negative substrate bias on the film microstructure and mechanical properties were systematically investigated with XRD, GDOES, and SEM. The results show that substrate bias has an important influence on film growth and microstructure of gradient CrNx coatings. The coatings mainly crystallized in the mixture of hexagonal $Cr_{2}N$ and fcc CrN phases. By increasing substrate bias, film microstructure evolved from an apparent columnar structure to an equiaxed one. With increasing substrate bias, deposition rate first increased, and then decreased. The maximum of deposition rate was 15 nm/min obtained at a bias of -50V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.252-255
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• 2019

Black phosphorus (BP) is a potential candidate for an anode in lithium ion batteries due to its high theoretical capacity and the large interlayer spacing in the monolayered phosphorene form, allowing for lithium intercalation/deintercalation. In this study, large-scale exfoliation of bulk BP was accomplished using a solution of NaOH and N-methyl-2-pyrrolidone (NMP), yielding phosphorene, which can be assembled into nanoflakes using electrophoretic deposition (EPD). Through the systematic addition of NaOH and subsequent sonication, BP nanoflakes were obtained in high yields by EPD, allowing for the integration of these nanoflakes into an anode in the film state. Anodes with a charge/discharge capacity of 172 mAh/g at a rate of 200 mA/g were obtained, which are promising for battery applications through various post-film treatments.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.36-36
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• 1997

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.493-496
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• 2011

In this paper, ion beam technology was investigated mainly through the published papers. There are two different types of method application. One method is to remove the material from the substrate, the other one is deposited to the surface of the substrate or specimen. Based on the literature review there are 3-4 times more published research papers related to the deposition than those of the removal.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.397-397
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• 2007

Diamondlike carbon (DLC) coatings were deposited on alumina ceramic seals using a plasma immersion ion deposition technique (PIID). Then they were subjected to tribological tests using a pin-on-disc tribometer under a high load (1.3 GPa) and under elevated temperatures up to 400C. Coefficients of friction (COFs) were recorded and compared with that of the untreated alumina while the wear tracks were analyzed using SEM with EDS to characterize the DLC films. To enhance the DLC adhesion to the substrate, various interlayers including Si and Cr were deposited using the PIID process or an ion beam assisted deposition (IBAD) method. It was observed that the DLC coating, if adhering well to the substrate, reduced the COFs significantly, from 0.4-0.8 for the uncoated alumina to about 0.05-0.1, within the tested temperature range. The adhesion was determined by the interlayer type and possibly by the application method. Cr interlayer did not perform as well as the Si interlayer. This could also be due to the fact that the Cr interlayer and the subsequent DLC coating had to be done in two different processing systems, while both the Si interlayer and the subsequent DLC film were deposited in one system without breaking the chamber. The coating failure mode was found to be delamination between the Cr and the alumina substrate. In contrast, the Si interlayer with proper DLC deposition procedures resulted in very good adhesion and hence excellent tribological performance. Further study may lead to future DLC applications of ceramic seals.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.