• Transactions on Electrical and Electronic Materials
• /
• 제13권1호
• /
• pp.6-9
• /
• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• 한국진공학회지
• /
• 제6권S1호
• /
• pp.110-114
• /
• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• 반도체디스플레이기술학회지
• /
• 제4권2호
• /
• pp.39-43
• /
• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 추계학술대회 논문집
• /
• pp.782-785
• /
• 1997

In this study, the spectra was surface-treated using $Ar^+$ ion beam to improve the tensile property of spectra/vinylester composites. The effect of surface treatment on the tensile property of spectra/vinylester composites was investigated comparing tensile strength and stiffness of surface-treated spectra/vinylester composites with those of untreated spectra/vinylester composites. The results showed that the tensile strength and stiffness of surface-treated s spectra/vinylester composites were 12% and 22% higher than those of untreated spectra/vinylester composites.

• 대한기계학회논문집A
• /
• 제27권4호
• /
• pp.632-637
• /
• 2003

In this study, the effect of surface treatment of CFRP and aluminum on the fracture toughness of CFRP/aluminum composites was investigated. CFRP was surface-treated by Ar$^{+}$ ion beam under oxygen environment, and the aluminum was surface-treated by DC plasma. CFRP was adhesively bonded to aluminum using the secondary bonding procedure. Cracked lap shear specimens were used to determine fracture toughness. Three cases of cracked lap shear specimens were made depending on the surface treatment. The values of fracture toughness of three cases were compared to each other It was found that the fracture toughness of ion beam-treated CFRP/aluminum composites was almost 72 % higher than that of unrented CFRP/aluminum composites. The fracture toughness of CFRP/plasma-treated aluminum composites was 50 % higher than that of untreated CFRP/aluminum composites.s.

• 한국표면공학회지
• /
• 제35권4호
• /
• pp.206-210
• /
• 2002

The use of Spectra fibers as fiber cloth is increasing because of their excellent impact resistance. However, a major limitation on the use of Spectra fibers is a chemical inertness. In this Study, Spectra fibers were surface-treated using Ar$^{+}$ ion beam under oxygen environment to improve the tensile property of Spectra/vinylester composites. The effect of surface treatment of Spectra fibers on the tensile property of Spectra/vinylester composites was determined from tensile tests using Spectra/vinylester composite specimens with and without a hole. It was found that the tensile stiffness and strength of surface-treated case were 22% and 17% higher than those of untreated case for specimens with no hole. The maximum load of surface-treated case was about 15% higher than that of untreated case for specimens with a hole.

• 한국산학기술학회논문지
• /
• 제16권12호
• /
• pp.8679-8683
• /
• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
• /
• pp.112-112
• /
• 1997

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
• /
• pp.113-113
• /
• 1997