• 한국초전도학회:학술대회논문집
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• v.9
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• pp.178-184
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• 1999

We have measured I-V characteristics of Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ mesa containing a small number of intrinsic stacked Josephson junctions in a magnetic field. We fabricated mesa with an area of 40${\times}$40 ${\mu}$m$^2$ containing 3${\sim}$20 intrinsic junctions. We applied magnetic field perpendicular to He CuO$_2$ planes up to 5T. We observed flux-flow branches and flux-flow steps in the I-V characteristics which might be due to collective motion of Josephson vortices in the long junction limit. In a parallel field, critical current I$_c$ varies as I$_c$(B) ${\sim}$ exp(-B/B$_0$), where B$_0$ is about 2T, which is consistent with the theoretical model. DC and AC intrinsic Josephson effects are also discussed.

• Progress in Superconductivity
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• v.1 no.2
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• pp.110-114
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• 2000

We have investigated the Josephson vortex dynamics in $Bi_2Sr_2CaCu_2O{8+\delta}$ intrinsic Josephson junctions subjected to a magnetic field parallel to $CuO_2$ planes. We investigated mesas with $40\times40{\mu}m^2$ in size and containing 6 and 20. intrinsic junctions. The zero field I-V characteristics exhibited a typical hysteretic, multi-branched nature of the intrinsic Josephson effect. At high magnetic fields (H>1.5 T), I-V characteristics showed flux flow steps. The Swihart velocity obtained from this observation was about $4.2\times10^5$ m/s, which was the lowest mode electromagnetic wave velocity of N coupled stack. The experimental I-V curves fitted well into the simple model of Cherenkov radiation including Ohmic and non-linear dissipation terms. This suggests that the dissipation mechanism of Josephson vortex be due to both Cherenkov radiation and quasiparticle tunneling current.

• Progress in Superconductivity
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• v.5 no.1
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• pp.9-12
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• 2003

We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8＋x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.17-20
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• 2003

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than 10%-20% of the channel resistance. To achieve the requirements, we should investigate a methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.113-121
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• 2017

The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.48-48
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• 2006

• Progress in Superconductivity
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• v.8 no.2
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• pp.138-142
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• 2007

We observed discrete fluxon-flow resonance steps in high magnetic fields in a stack of Josephson junctions with lateral size of $1.5{\times}17{\mu}m^2$. The measurement sample was prepared by sandwiching a stack of $Bi_2Sr_2CaCu_2O_{8+x}$ intrinsic Josephson junctions between two Au electrodes by using the double-side-cleaving technique. This technique allowed us to isolate the intrinsic Josephson junction structures from the inductive interference of the basal stack. The resonance steps observed are in good agreement with the collective Josephson fluxon dynamics that are in resonance with the plasma oscillation modes inside the stacked Josephson junctions.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.666-672
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• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.