• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.209-219
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• 1993

Evaporated Al/Pd thin films were irradiated with various doses to produce intermetallic compounds. In order to study the first phase formation and phase sequence, RBS and TEM studies have been used. It was found that the initial phase formed by irradiation of $5{\times}10^{15}Ar^+/cm^2$ was $Al_3Pd_2$, while $1.5{\times}10^{16}Ar^+/cm^2$ gave the subsequent phase of AlPd. This phenomenon was analysed using effective heat of formation (${\Delta}$H') model. The experimental results agree with that predicted by effective heat of formation model. This model has been extended to predict the first phase formation and phase sequence by ion beam mixing in metal/Si systems as well as metal-metal systems.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.108-108
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• 2009

Precipitation hardening nickel base alloys strengthened by intermetallic compounds are extensively used to manufacture on the components of the hot section of gas turbine engines. To ensure structural stability and maintenance of strength properties for a long time, nickel alloys are normally subjected to complex alloying with elements to form ${\gamma}'$(gamma prime). Such alloys have a limited weldability, are normally welded in high temperature. However, laser welding have a merit that applies in room temperature as easy control of welding parameter and heat input. In this study, $CO_2$ laser welding is applied on STS304 plate with good ductility and precipitation hardening nickel base alloy (GTD111DS) used blade material. Also, several welding parameters are applied on powder, power and travel speed. There are no cracks in Rene 80 and IN 625 powder when STS304 plate is used. But IN 625 powder has no cracks and Rene 80 have some cracks in welds with GTD111DS substrate. Adjusting of welding parameter is tried to apply Rene 80 having a good strength compare to IN 625. In the result of adjusted welding parameter, optimized welding parameters are set with low power, low feed rate and high welding speed. Tensile strength of GTD111DS substrate with Rene 80 powder is same and over than the one of base metal in room temp and high temp($760^{\circ}C$).

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.398-402
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• 2000

Three kinds of $Al_3Ti-Cr$ alloys, namely, $Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{59}Ti_{26}Cr_{15}$, were prepared by induction melting followed by the thermomechanical treatment. The corrosion behavior in 3.5% NaCl solution and the high-temperature oxidation behavior at 1000, 1100 and $1200^{\circ}C$ for the prepared alloys were investigated. Electrochemical results indicated increased resistance to localized corrosion with increasing Cr content. Cr additions were found to prevent passive film from undergoing brittle fracture. XPS results revealed the passive films of $Al_3Ti-Cr$ alloys were composed mainly of $Al_2O_3$ that coexisted with $TiO_2$ and $Cr_2O_3$. The overall oxidation resistance of the prepared alloys were excellent. Specifically, the oxidation resistance increased in the order of $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{67}Ti_{25}Cr_8$. As the Al content in the base alloys increased, the $Al_2O_3$ formation was facilitated leading to the increased oxidation resistance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Journal of Biomedical Engineering Research
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• v.24 no.3
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• pp.203-208
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• 2003

The effect of indium on the microstructure and hardness of a Au-Pt-Cu ternary alloy was investigated using optical microscopy, differential scanning calorimeter, scanning electron microscopy x-ray diffractometry, electron probe microanalizer and vickers hardness tester. A hardness of the solution floated Au-Pt-Cu-0.5In quarternary alloy with 0.5 wt.% was reached a maximum value (162 Hv) in 30 min at 550$^{\circ}C$ in the range of 150 to 950$^{\circ}C$ but that of the alloy was rapidly increased until 30 min with increasing aging time at 550$^{\circ}C$ and after that was remained almost constant value. Also, the microhardness of the matrix Au-Pt-Cu ternary alloy aged at 550$^{\circ}C$ for 30 min was continuously increased with indium contents and the grain size of Au-Pt-Cu ternary alloy decreased as increased indium contents. Analyses of EPMA and XRD revealed that the matrix Au-Pt-Cu-In quarternary alloy is composed of fcc structure and intermetallic InPt$_3$ precipitate with Ll$_2$ structure. Based on this investigation, it can be concluded that an increase in microhardness of Au-Pt-Cu-In quarternary alloy is due to precipitation hardening InPt$_3$ and grain size refinement.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.43-47
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• 2011

It is known that the Fe-Al transition metal compounds have a lot of disagreement about structural stability and magnetism. In this study, the correlation between magnetism and atomic structure of ordered $B_2$, $L1_2$, and $D0_3$ structured Fe-Al compounds has been investigated using the all-electron full-potential linearized augmented plane wave (FLAPW) method based on the generalized gradient approximation (GGA). We found that considered all the structures were calculated to be stabilized in a ferromagnetic state. The calculated spin magnetic moments of the Fe atoms for B2 and $L1_2$ structures were 0.771 and 2.373 ${\mu}_B$, respectively, and that of Fe(I) and Fe(II) in $D0_3$ structure calculated to be 2.409 ${\mu}_B$, 1.911 ${\mu}_B$, respectively. In order to investigate structural stability between $L1_2$ and $D0_3$ structures, we performed the formation enthalpy calculations. As a result, the $D0_3$ structure is found to be more favorable than $L1_2 one by energy difference 16 meV/atom, which is well consistent with the experimental observation. We understood about structural stability and magnetism for Fe-Al compounds in terms of analysis of their atomic and electronic structures.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.