• Title/Summary/Keyword: interlayer

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Reduction of Contact Resistance Between Ni-InGaAs Alloy and In0.53Ga0.47As Using Te Interlayer

  • Li, Meng;Shin, Geon-Ho;Lee, Hi-Deok;Jun, Dong-Hwan;Oh, Jungwoo
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.5
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    • pp.253-256
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    • 2017
  • A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

Improvement of Modeling Capability of GMDH Algorithm with Interlayer Connection (층간 연결에 의한 GMDH 알고리듬의 모델링 성능 향상)

  • Hong, Yeon-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.6
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    • pp.1200-1207
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    • 2009
  • The GMDH(Group Method of Data Handling) algorithm can be used to model the complex nonlinear systems. The traditional GMDH algorithm produces the output of the system model in the output layer through the input layer and the intermediate layers as the prescribed process. The outputs of each layer are produced only by the outputs of the former layer. However among the inputs there may be the inputs which can influence the modeling result more than the other inputs. Therefore in this paper the method which improve the modeling capability by interlayer connection of more influential inputs is proposed. The capability improvement of the proposed algorithm compared to the traditional algorithm is verified through computer simulation.

A study on the effect of process parameters on the corrosion resistance of ion plated Tin films with Ti and Ni interlayers. (이온플레팅시 공정조건이 Ti 및 Ni 중간층을 갖는층을 갖는 TiN 박막의 내식성에 미치는 영향에 관한 연구)

  • 하희성;이종민;이인행;이정중
    • Journal of Surface Science and Engineering
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    • v.30 no.1
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    • pp.33-43
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    • 1997
  • The effects of process parameters substrate such as substrate current and substrate temperature on the corrosion resistance of ion plated TiN film were investigated. TiN fims were deposited on speed steel on which Ti or Ni hed been previously evaporated. Dense TiN films could be obtained under higher substrate current(1A) and substrate temperature($500^{\circ}C$), whereas TiN films deposited with lower substances current(0.5A) and substrate temperature($300^{\circ}C$) showed porous structure. The corrosion resistances of high speed steel was considerably increased when dense TiN films had been formed on it. The effect of Ti and Ni interlayer on the increase of the corrosion resistance was also significant with dense TiN films, while there was little effect of interlayer on the corrosion resistance when TiN films were porous. the effect of interlayer on the corrosion resistance was more outstanding with Ti then with Ni, because Ti reacts more easily with oxygen to form an oxide layer, and it also shows higher resistance against chlorine containing corrosion media.

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Epitaxial Growth of CoSi2 Layer on (100)Si Substrate using CoNx Interlayer deposited by Reactive Sputtering (반응성 스퍼터링법으로 증착된 CoNx 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi2 성장 연구)

  • Lee, Seung-Ryul;Kim, Sun-Il;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.30-36
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    • 2006
  • A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

A study on transient liquid phase diffusion bonding of 304 stainless steel and structural carbon steels (304 스테인레스강과 구조용탄소강과의 천이액상확산접합에 관한 연구)

  • 김우열;정병호;박노식;강정윤;박세윤
    • Journal of Welding and Joining
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    • v.9 no.4
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    • pp.28-39
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    • 1991
  • The change of microstructure in the bonded interlayer and mechanical properties of the joints were investigated during Transient Liquid Phase Diffusion Bonding(TLP bonding) of STS304/SM17C and STS304/SM45C couples using Ni base amorphous alloys added boron and prepared alloy as insert metal. Main experimental results obtained in this study are as follows: 1) Isothermal solidification process was completed much faster than theoretically expected time, 14ks at 1473K temperature. Its completion times were 3.6ks at 1423K, 2.5ks at 1473K and 1.6ks at 1523K respectively. 2) As the concentration of boron in the insert metal increased, the more borides were precipitated near bonded interlayer and grain boundary of STS304 side during isothermal solidification process, its products were $M_{23}P(C,B)_6}_3)$ The formation of grain boundary during isothermal solidification process was completed at structural carbon steel after starting the solidfication at STS304 stainless steel. 4) The highest value of hardness was obtained at bonded interface of STS304 side. The desirable tensile properties were obtained from STS304/SM17C, STS304/SM45C using MBF50 and experimentally prepared insert metal with low boron concentration.

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Effects of Interlayer Formation and Thermal Treatment on Field-emission Properties of Carbon Nanotube Micro-tips (계면층 형성 및 열처리가 탄소 나노튜브 미세팁의 전계방출 특성에 미치는 영향)

  • Kim, Bu-Jong;Park, Jin-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.1-6
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    • 2013
  • The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

Exchange and Interlayer Coupling in NiO Spin Valve Films (NiO 스핀밸브 박막에서 교환결합과 사잇층 결합에 관한 연구)

  • 박창만;고성호;황도근;이상석;이기암
    • Journal of the Korean Magnetics Society
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    • v.7 no.5
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    • pp.258-264
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    • 1997
  • Exchange and interlayer couplings between a NiFe ferromagnetic layer and an antiferromagnetic NiO layer in NiO/NiFe/Cu/NiFe spin-valve films prepared by rf/dc magnetron sputtering were investigated. The interlayer coupling field ($H_{int}$ decreased with the Cu layer thickness, and the exchange coupling field $(H_{ex}$ saturated to 90 Oe. the magnetitudes of $H_{ex}$ and $H_{int}$ decreased with increasing thickness of the pinned NiFe layer. The increase of $H_{int}$ with the free NiFe layer may be due to the increased magnetization.

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MAGNETORESISTANCE OF NiFeCo/Cu/NiFeCo/FeMn MULTILAYERED THIN FILMS WITH LOW SATURATION FIELD

  • Bae, S.T.;Min, K.I.;Shin, K.H.;Kim, J.Y.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.570-574
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    • 1995
  • Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

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A theoretical mapping model for bridge deformation and rail geometric irregularity considering interlayer nonlinear stiffness

  • Leixin, Nie;Lizhong, Jiang;Yulin, Feng;Wangbao, Zhou;Xiang, Xiao
    • Steel and Composite Structures
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    • v.46 no.1
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    • pp.93-105
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    • 2023
  • This paper examines a high-speed railway CRTS-II ballastless track-bridge system. Using the stationary potential energy theory, the mapping analytical solution between the bridge deformation and the rail vertical geometric irregularity was derived. A theoretical model (TM) considering the nonlinear stiffness of interlayer components was also proposed. By comparing with finite element model results and the measured field data, the accuracy of the TM was verified. Based on the TM, the effect of bridge deformation amplitude, girder end cantilever length, and interlayer nonlinear stiffness (fastener, cement asphalt mortar layer (CA mortar layer), extruded sheet, etc.) on the rail vertical geometric irregularity were analyzed. Results show that the rail vertical deformation extremum increases with increasing bridge deformation amplitude. The girder end cantilever length has a certain influence on the rail vertical geometric irregularity. The fastener and CA mortar layer have basically the same influence on the rail deformation amplitude. The extruded sheet and shear groove influence the rail geometric irregularity significantly, and the influence is basically the same. The influence of the shear rebar and lateral block on the rail vertical geometric irregularity could be negligible.

Diamond Films on Electroless Ni-P Plated WC-Co Substrates (무전해 Ni-P도금층/WC-Co기판 상에 다이아몬드 막 제조)

  • Kim, Jin-Oh;Kim, Hern;Park, Jeong-Il;Park, Kwang-Ja
    • Applied Chemistry for Engineering
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    • v.8 no.5
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    • pp.742-748
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    • 1997
  • Diamond films which have high hardness and thermal conductivity can be used to improve the performance of WC-Co as a cutting tool material. However, it is difficult to get such coatings of good uniformity and adhesiveness due to the surface characteristics of WC-Co. To get better coatings, some techniques, such as the surface treatment of substrate or the formation of interlayer between substrate and diamond film, have been tried. In the present work, the nickel interlayer is formed onto WC-Co by electroless Ni-P plating, which is introduced as a new method, and then diamond film is deposited on the interlayer. Formation and uniformity of three layers, i.e., substrate, electroless plate, and diamond film, and the adhesiveness of interlayers were studied. To investigate the effects of pretreatment on electroless plating, two different methods such as acid treatment and diamond powder treatment were used. The effects of heat treatment of the electroless plated surface on adhesiveness between the substrate and the interlayer were examined. It was found that as the temperature increases, the Ni crystals grow and then result in improved adhesiveness. Diamond film coatings of pure diamond phase were obtained at $800^{\circ}C$. It is concluded that the heat treated electroless Ni-P plating can be effectively used as a interlayer between WC-Co substrate and diamond film.

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