• Title/Summary/Keyword: interlayer

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Impact of soft and stiff soil interlayers on the pile group dynamic response under lateral harmonic load

  • Masoud Oulapour;Sam Esfandiari;Mohammad M. Olapour
    • Geomechanics and Engineering
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    • v.33 no.6
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    • pp.583-596
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    • 2023
  • The interlayers, either softer or stiffer than the surrounding layers, are usually overlooked during field investigation due to the small thickness. They may be neglected through the analysis process for simplicity. However, they may significantly affect the dynamic behavior of the soil-foundation system. In this study, a series of 3D finite-element Direct-solution steady-state harmonic analyses were carried out using ABAQUS/CAE software to investigate the impacts of interlayers on the dynamic response of a cast in place pile group subjected to horizontal harmonic load. The experimental data of a 3×2 pile group testing was used to verify the numerical modeling. The effects of thickness, depth, and shear modulus of the interlayers on the dynamic response of the pile group are investigated. The simulations were conducted on both stiff and soft soils. It was found that the soft interlayers affect the frequency-amplitude curve of the system only in frequencies higher than 70% of the resonant frequency of the base soil. While, the effect of stiff interlayer in soft base soil started at frequency of 35% of the resonant frequency of the base soil. Also, it was observed that a shallow stiff interlayer increased the resonant amplitude by 11%, while a deep one only increased the resonant frequency by 7%. Moreover, a shallow soft interlayer increased the resonant frequency by 20% in soft base soils, whereas, it had an effect as low as 6% on resonant amplitude. Also, the results showed that deep soft interlayers increased the resonant amplitude by 17 to 20% in both soft and stiff base soils due to a reduction in lateral support of the piles. In the cases of deep thick, soft interlayers, the resonant frequency reduced significantly, i.e., 16 to 20%. It was found that the stiff interlayers were most effective on the amplitude and frequency of the pile group.

Behavior of High-elastic Stress Absorbing Interlayer for Reflective Cracking Resistance (고탄성 응력흡수층의 반사균열 저항특성 연구)

  • Park, Tae Soon;Lee, Yo Seop
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.26 no.3D
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    • pp.445-451
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    • 2006
  • This study was conducted to develop the interlayer mixture that absorbs the stress between the old concrete pavement and the asphalt overlay pavement layer. The elasticity, the flexibility, the consistency and the impermeability is required for high-elastic Stress Absorbing Interlayer(HSAI) to absorb and disperse the stress that causes the flexural and horizontal movements of the joint and the crack. The HSAI developed from foreign product was satisfied with the design criteria. The specimens using the HSAI showed the significant reduction of the reflective crack compared those not using the HSAI. The significance included that the life of shear failure and horizontal displacement resistance increased 4 times. The life of the share failure increased to 5 times and the horizontal displacement increased to 9 times according to the selection of surface course material which showed the excellence of the HSAI.

Novel Phenol Resin Carbonizing Method for Carbon Interlayer Coating between Reinforcing Fiber and Matrix in Fiber Reinforced Ceramic Composite (페놀수지 탄화 코팅법을 이용한 섬유강화 복합재료 계면 형성에 관한 연구)

  • Kim, Se-Young;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.301-305
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    • 2009
  • The novel carbon coating process for interlayer of fiber reinforced ceramic composites between fiber and matrix was performed by carbonizing phenolic resin solution that coated on fiber surface in $N_2$ atmosphere at $600^{\circ}C$ to improve the strength and fracture toughness of CMC(ceramic matrix composite). 160 nm carbon layer was coated on fiber surface with 5 vol% of phenolic resin solution. Since the process temperature ($600^{\circ}C$) is lower than chemical vapor deposition($900{\sim}1000^{\circ}C$), the strength and toughness could be preserved. Furthermore the coating thickness uniformity was improved to 8% of deviation along the stacking sequence. Therefore, prevention from fiber degradation during coating process and controlling coating thickness uniformity along the preform depth were achieved by coating with phenolic resin carbonizing method.

An analytical model of layered continuous beams with partial interaction

  • Schnabl, Simon;Planinc, Igor;Saje, Miran;Cas, Bojan;Turk, Goran
    • Structural Engineering and Mechanics
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    • v.22 no.3
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    • pp.263-278
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    • 2006
  • Starting with the geometrically non-linear formulation and the subsequent linearization, this paper presents a consistent formulation of the exact mechanical analysis of geometrically and materially linear three-layer continuous planar beams. Each layer of the beam is described by the geometrically linear beam theory. Constitutive laws of layer materials and relationships between interlayer slips and shear stresses at the interface are assumed to be linear elastic. The formulation is first applied in the analysis of a three-layer simply supported beam. The results are compared to those of Goodman and Popov (1968) and to those obtained from the formulation of the European code for timber structures, Eurocode 5 (1993). Comparisons show that the present and the Goodman and Popov (1968) results agree completely, while the Eurocode 5 (1993) results differ to a certain degree. Next, the analytical solution is used in formulating a general procedure for the analysis of layered continuous beams. The applications show the qualitative and quantitative effects of the layer and the interlayer slip stiffnesses on internal forces, stresses and deflections of composite continuous beams.

Investigation of the interface between diamond film and silicon substrate using transmission electron microscopy (투과 전자 현미경을 이용한 다이아몬드 박막과 실리콘 기판의 계면 연구)

  • 김성훈
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.2
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    • pp.100-104
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    • 2000
  • Diamond film was deposited on Si substrate by using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. After thinning the cross section between diamond film and Si substrate by ion milling method, we investigated its interface via transmission electron microscopy We could observe that the diamond film was grown either directly on Si substrate or via the interlayer between diamond film and Si substrate. Thickness of the interlayer was varied along the cross section. The interlayer might mainly composed of Sic andlor amorphous carbon. We could observe the well-developed electron diffraction pattern of both Si and diamond around the interface. Based on this result, we can conjecture the initial growth behavior of diamond film on Si substrate.

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Characteristics of Gate Oxides with Cobalt Silicide Process (복합 코발트 실리사이드 공정에 따른 게이트 산화막의 특성변화)

  • Song, Oh-sung;Cheong, Seong-hwee;Yi, Sang-don;Lee, Ki-yung;Ryu, Ji-ho
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.711-716
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    • 2003
  • Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

Effects of Strain Rate and Temperature on Fracture Strength of Ceramic/Metal Joint Brazed with Ti-Ag-Cu Alloy

  • Seo, Do-Won;Lim, Jae-Kyoo
    • Journal of Mechanical Science and Technology
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    • v.16 no.9
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    • pp.1078-1083
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    • 2002
  • Ceramics are significantly used in many industrial applications due to their excellent mechanical and thermal properties such as high temperature strength, low density, high hardness, low thermal expansion, and good corrosion resistive properties, while their disadvantages are brittleness, poor formability and high manufacturing cost. To combine advantages of ceramics with those of metals, they are often used together as one composite component, which necessiates reliable joining methods between metal and ceramic. Direct brazing using an active filler metal has been found to be a reliable and simple technique, producing strong and reliable joints. In this study, the fracture characteristics of Si$_3$N$_4$ ceramic joined to ANSI 304L stainless steel with a Ti-Ag-Cu filler and a Cu (0.25-0.3 mm) interlayer are investigated as a function of strain rate and temperature. In order to evaluate a local strain a couple of strain gages are pasted at the ceramic and metal sides near joint interface. As a result the 4-point bending strength and the deflection of interlayer increased at room temperature with increasing strain rate. However bending strength decreased with temperature while deflection of interlayer was almost same. The fracture shapes were classified into three groups ; cracks grow into the metal-brazing filler line, the ceramic-brazing filler line or the ceramic inside.

Transient Liquid Phase Bonding of Directionally Solidified Ni Base Superalloy, GTD-111(I) - Bonding Phenomena and Mechanism - (일방향응고 Ni기초내열합금 GTD-111의 천이액상확산접합(I))

  • 강정윤;권민석;김인배;김대업;우인수
    • Journal of Welding and Joining
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    • v.21 no.2
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    • pp.82-88
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    • 2003
  • The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)

Pseudogap behavior in interlayer tunneling spectroscopy in $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$

  • Bae Myung-Ho;Choi Jae-Hyun;Lee Hu-Jong
    • Progress in Superconductivity
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    • v.7 no.1
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    • pp.1-5
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    • 2005
  • A pseudogap in the normal-state quasiparticle density of states of $high-T_c$ superconductors has been revealed in many different kinds of experiments. The existence of the pseudogap and the superconducting gap, and the correlation between them has attracted considerable attention because they are believed to be a key to understanding the mechanism of the $high-T_c$ superconductivity. The interlayer tunneling spectroscopy, excluding the surface-dependent effect, is one of the most accurate means to examine the electron spectral characteristics both in the superconducting and the normal states. In this study, a new constant-temperature intrinsic tunneling spectroscopic technique, excluding the overheating effect using the in-situ temperature monitoring combined with the digital proportional-integral-derivative control, is introduced. The implication on the $high-T_c$ superconductivity of the detailed temperature dependencies of the observed spectral weight in $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}\;high-T_c$ material for overdoped and underdoped levels is discussed.

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The formation of diamond films on high speed steel with a titanium inter- layer by electron-assisted CVD process (화학증착법에 의한 티타늄 피복된 고속도강에의 다이아몬드 박막 형성)

  • 정연진;이건영;이호진;최진일
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.1
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    • pp.6-11
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    • 2004
  • The characteristics of interface layer and the effect of bias voltages on the nucleation density and heteroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of $700^{\circ}C$. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.