• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.394-394
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• 2009

Water solubility of conjugated polymers may offer many applications. Potential applications of water-soluble conjugated polymers include the polymer light-emitting diode and new materials for nano and micro hollow-capsules, and bio- or chemo-sensors. We synthesized neutral polyfluorenes containing bromo-alkyl groups by the palladium catalyzed Suzuki coupling reaction. Bromo-alkyl side groups in neutral polyfluorenes were quaternized by tri-methyl amine solution. The electrochemical and optical properties of water-soluble conjugated polymers are discussed. This novel synthesized water-soluble conjugated polymers were used as a interfacial dipole layer between active layer and metal cathode in polymer solar cell for enhancement of open-circuit voltage (Voc), which is one of the most critical factors in determining device characteristics. We also investigated the device performance of polymer solar cell with different metal cathode such as Al, Ag, Au and Cu. In polymer solar cell, novel cationic water-soluble conjugated polymers were inserted between active layer and high-work function cathode (Al, Ag, Au and Cu).

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.481-486
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• 2002

We have investigated the effects of plating materials for Cu lead (Sn-lOPb, AwPdJNi, Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu) on properties of QFP joints using a Sn-8Zn-3Bi solder. The results were compared with the joints using Sn-3. 5Ag-0. 7Cu and Sn-37Pb solders. As a result, the joints with the Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu plated Cu lead had the reliability comparable to those of the Sn-3.5Ag-0.7Cu and Sn-37Pb soldered joints with respect to the joint strength after the high temperature holding tests at 348K to 423k. In particular, the joint with the Sn-3.5Ag plated Cu lead had the best reliability. This is caused by the low growth rate of a Cu-Sn interfacial reaction layer that degrades the joint strength of the soldered joints. Consequently, the Sn-3.5Ag plating was found to be most feasible plating for the Sn-8Zn-3Bi soldered joint.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.353-359
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• 2023

This study investigated the growth behavior and characteristics of compounds formed at the interface between a liquid Al-Si-Cu alloy and solid cast iron. Through microstructural analyses, it was observed that various AlFe and AlFeSi phases are formed at the interface, and the relative proportion of each phase changes when small amounts of strontium are added to the Al alloy. The results of the microstructural analysis indicate that the primary phases of the interfacial compounds in the Al-Si-Cu base alloy are Al₈Fe₂Si and Al_4.5FeSi. However, in the Sr-added alloys, significant amounts of binary AlFe intermetallic compounds such as Al₅Fe₂ and Al₁₃Fe₄ formed, in addition to the AlFeSi phases. The inclusion of Sr has a slight diminishing effect on the rate at which the interfacial compounds layer thickens during the time the liquid Al alloy is in contact with the cast iron. The study also discusses the nano-indentation hardness and micro-hardness of the interfacial phases.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.

• Korean Journal of Metals and Materials
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• v.47 no.3
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• pp.202-208
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• 2009

The effects of aging time on the microstructure and shear strength of the Low Temperature Co-fired Ceramic (LTCC)/Ag pad/Electroless Nickel Immersion Gold (ENIG)/BGA solder joints were investigated through isothermal aging at $150^{\circ}C$ for 1000 h with conventional Sn-37Pb and Sn-3Ag-0.5Cu. $Ni_3Sn_4$ intermetallic compound (IMC) layers was formed at the interface between Sn-37Pb solder and LTCC substrate as-reflowed state, while $(Ni,Cu)_3Sn_4$ IMC layer was formed between Sn-3Ag-0.5Cu solder and LTCC substrate. Additional $(Cu,Ni)_6Sn_5$ layer was found at the interface between the $(Ni,Cu)_3Sn_4$ layer and Sn-3Ag-0.5Cu solder after aging at $150^{\circ}C$ for 500 h. Thickness of the IMC layers increased and coarsened with increasing aging time. Shear strength of both solder joints increased with increasing aging time. Failure mode of BGA solder joints with LTCC substrate after shear testing revealed that shear strength of the joints depended on the adhesion between Ag metallization and LTCC. Fracture mechanism of Sn-37Pb solder joint was a mixture of ductile and pad lift, while that of Sn-3Ag-0.5Cu solder joint was a mixture of ductile and brittle $(Ni,Cu)_3Sn_4$ IMC fracture morphology. Failure mechanisms of LTCC/Ag pad/ENIG/BGA solder joints were also interpreted by finite element analyses.

• 연구논문집
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• s.24
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• pp.63-79
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• 1994

This article reports a experimental study of the method to achieve a bond joint at lower temperature in a short time. DC magnetron sputtering of Sn, Sn/Pb, Sn/In and Sn/Cu on copper substrate was provided as an interlayer for Cu to Cu bonding under the air environment. Various examination was conducted and investigated on the effect of experimental parameters such as coating materials, coating time(or coating thickness), bonding temperature and bonding time etc. Bonding was performed at the temperature of $210^\circC-320^\circC$ for 0sec and interfacial reaction between the coated layer and copper substrate was examined using optical, scanning electron microscope and x-ray diffractometer. From the obtained results, it was found that intermetallic compounds layer consisted of $\eta-phase(Cu_6Sn_5)$ and $\beta-phase(Cu_3Sn)$ was formed at the joint interface for almost all coating materials. But the dominant phase formed in the preetched Cu substrate coated with Sn was $\beta-phase$. A characteristic morphology looks like a reaction ring, which was believed as the strong interconnecting regions between two substrates, was found to be formed on the reaction surface of copper substrates. The morphologies and compositions of the intermetallics, which depends on the regions of the reaction surface, was appeared as greatly different. Based on above results, the new bonding process to make the joint at lower temperature for short time can be admitted as a feasible process.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.747-752
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• 1999

The interfacial reaction and joint properties of Sn-3.5Ag/Cu and Sn-3.5Ag-1Zn/Cu joint were studied. Modified double lap shear solder joints of Sn-3.5Ag and Sn-3.5Ag- lZn solder were aged for 60days at $100^{\circ}C$ and $150^{\circ}C$ and then loaded to failure in shear. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-lZn at the aging temperature of $150^{\circ}C$ Through the SEM/EDS analysis of solder joint, it was proved that intermatallic layer was $Cu_{6}Sn_5$ phase and aged specimens showed that intermatallic layer grew in proportion to $t_{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_{6}Sn_{5}$ phase formed at the side of substrate and $Cu_{5}Zn_{8}$ phase formed at the other side in double layer. The shear strength of the Sn-3.5Ag/Cu joint improved by addition of IZn. The strength of the joint increases with strain rate and decreases with aging temperature