• 한국세라믹학회지
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• 제33권7호
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• pp.823-831
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• 1996

Due to the intrinsic low surface activation of ${\gamma}$-alumina it has been used limitely in practice. Accordingly forward enhancing its utility ${\gamma}$-alumina surface was treated with slfuricf aicd nitric acid and chloric acid respec-tively. Subsequently the effects of surface activity on the surface electrical characteristics were investigated. The ${\gamma}$-alumina was prepared by the precipitation of aluminium nitrate [Al(NO3)3.9H2O] using ammonia water as a precipitator and it was chemically treated with such acids mentioned above. The surface and morphology of the acid-treated ${\gamma}$-alumina were analysed by XRD, BET and the surface activities were measured by the amine titration methods. The interfacial properties of the ${\gamma}$-alumina dispersed in electrolyte solution were esti-mated by the surface charge density measured using potentiometric tiration. Based on the relation between surface charge density and the acid amount the following results were drawn for the surface and interfacial electrical properties ; Acidic properties of surface-treated alumina increase with anion load on alumina surface. P. Z. C decreases with acid amount on alumina surface. The surface charge densities were apart from electrolyte ionic strength. The acidity of ${\gamma}$-alumina is linearly dependent on the P. Z,.C when the ${\gamma}$-alumina was dispersed in aqueous electrolyte solution.

• 폴리머
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• 제27권2호
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• pp.91-97
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• 2003

각기 다른 온도에서 불소화 표면처리에 의한 실리카의 표면특성을 X-선 광전 분광법 그리고 접촉각을 통해 관찰하였으며, 복합재료의 기계적 계면물성과 열안정성에 미치는 영향은 인열 에너지와 분해 활성화 에너지를 통해 고찰하였다. 실리카 표면 자유 에너지의 London 비극성 요소와 불소작용기는 불소화 처리 온도에 따라 증가하였으며, 결과적으로 실리카/폴리우레탄 복합재료의 인열 에너지를 향상시켰다. 또한 복합재료의 열안정성은 불소화 함량에 따라 증가하였다. 이러한 결과는 실리카 표면에 도입된 불소작용기가 본 실험의 복합재료 시스템 내에서 실리카와 폴리우레탄 계면 사이의 분자간 상호작용을 향상시키는 주요한 인자로 작용한 것으로 사료된다.

• 접착 및 계면
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• 제5권1호
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• pp.3-11
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• 2004

본 연구에서는 DSC와 DMA를 이용하여 잠재성 양이온 개시제인 BPH에 의해 개시된 DGEBA/PMR-15 블렌드계의 경화거동에 대해 연구하였다. 본 블렌드계의 열안정성과 기계적 계면 특성은 TGA 분석과 임계 응력 세기 인자($K_{IC}$) 측정을 통하여 고찰하였다. 본 실험 결과, DSC 측정을 통하여 Ozawa 방정식으로부터 구한 경화 활성화 에너지($E_a$)와 DMA 측정을 통하여 구한 relaxation 활성화 에너지($E_r$)는 PMR-15의 함량이 증가함에 따라 증가하는 것을 알 수 있었다. 적분 열분해 온도(IPDT)와 유리전이온도($T_g$)로 알아본 열안정성은 PMR-15의 우수한 내열성으로 인해 PMR-15의 함량이 증가함에 따라 크게 증가하였다. 기계적 계면 특성인 $K_{IC}$ 또한 경화 활성화 에너지와 같은 경향을 나타내는 것을 알 수 있었는데, 이는 블렌드계의 분자들간의 수소 결합 또는 계면 결합력이 증가되었기 때문인 것으로 사료된다.

• 접착 및 계면
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• 제19권1호
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• pp.13-18
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• 2018

루테늄촉매는 대기중에 노출되었을 때, 촉매활성정도가 떨어지게 된다. 루테늄 촉매의 촉매활성변화를 대기노출 일수에 따라 표면장력방법을 이용하여 정량적으로 확인하였다. 각 대기노출일수에 따른 루테늄 촉매를 이용하여 DCPD 중합 후 기계 및 계면물성변화를 확인하였다. 희석제와 10:1로 섞인 루테늄 촉매를 대기 중에 노출 시킨 후 각 일수에 따라 색깔 관찰하였다. 윌헴리 및 PTFE를 이용하여 표면장력을 구하고 이를 촉매활성 정도와 연관시켰다. 각 촉매를 이용하여 DCPD를 중합시키는 데 발열량을 실시간으로 측정하였다. 경화 후 p-DCPD에 대하여 인장강도를 측정하여 물성감소정도를 확인하였다. 또한, 유리섬유 간 마이크로드롭렛 풀 아웃 실험을 통하여 계면물성 또한 파악하였다. 표면장력방법을 통하여 촉매활성 정도를 확인하였을 때, 4일까지는 33 dyne/cm로 안정적이었지만, 6일 이후로 표면장력이 34 dyne/cm 이상 증가하는 것을 확인하였고, 이는 촉매의 산화와 연관시킬 수 있었다. 기계적 물성 확인하였을 때, 인장강도 및 계면강도 또한 6일 (인장강도: 38 MPa. 계면전단 강도: 26 MPa) 까지는 안정적이었지만 10일 (인장강도: 15 MP. 계면전단강도: 3 MPa) 이후로 물성이 급격하게 감소하는 것을 확인하였다.

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.73-79
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• 2022

본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa₂ 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa₂ IMC 그리고 하부에는 얇은 띠 형상의 Cu₉Ga₄ IMC가 형성되었다. CuGa₂ 입자들은 scallop 형상을 보이며 Cu₆Sn₅ 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa₂ 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• 한국세라믹학회지
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• 제26권2호
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• pp.195-200
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• 1989

The Silica-Carbon mixture was made with addition of carbon black in the composition which monodispersed spherical fine silica was formed by the hydrolysis of ethylsilicate, mole ratio of Carbon/Alkoxide was 3.1 and $\beta$-SiC powder was synthesized by reacting this mixture at 1,350~1,50$0^{\circ}C$ in Ar atmosphere. The results of this study are as follow : (1) The purity of synthesized $\beta$-SiC powder was above 99.98% and it was in cubic modification with lattice constant of 4.3476$\AA$. (2) The rate-controlling steps varied with the reaction temperature for the syntehsis of $\beta$-SiC in this study ; nucleation and growth of $\beta$-SiC at 1,350~1,40$0^{\circ}C$, interfacial reaction at 1,45$0^{\circ}C$ and diffusion described by Jander Equation at 1,50$0^{\circ}C$. (3) When the rate-determining step was nucleation and growth, the activation energy was about 87.8kcal/mol.

• Journal of Welding and Joining
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• 제20권1호
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.