• Transactions on Electrical and Electronic Materials
• /
• 제15권6호
• /
• pp.328-332
• /
• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• 대한전자공학회논문지
• /
• 제27권7호
• /
• pp.1042-1048
• /
• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

• 한국콘크리트학회:학술대회논문집
• /
• 한국콘크리트학회 2004년도 춘계 학술발표회 제16권1호
• /
• pp.108-111
• /
• 2004

The polypropylene(PP) fiber is poised as a low cost alternative for reinforcement in structural applications in comparison with other high performance fibers, such as the polyvinyl-alcohol(PVA), polyethylene, carbon and aramid fiber. The mechanical properties of the composite are strongly determined by the interfacial behavior of fiber and cementitious matrix. The crack bridging mechanism contribute to composite toughness from activation of the fiber-matrix interface where energy is dissipated through debonding of the interface and fiber pullout. In this study, therefore, the pullout behavior of PP fibers is investigated. Experimental work includes the investigation of the interfacial properties, and the composite property. The quantification of interfacial properties, the frictional bond is achieved through single fiber pullout test. A study on the effect of inclination angle on fiber pullout behavior is also conducted.

• 폴리머
• /
• 제26권6호
• /
• pp.767-777
• /
• 2002

본 실험에서는 4관능성 에폭시 수지 (4EP)와 생분해성 modified aliphatic polyester (MAP) 블렌드의 경화 거동, 열안전성, 유변학적 특성, 그리고 기계적 특성을 살펴보았다. DSC 측정 결과, 경화 활성화 에너지 ( $E_{a}$ )는 4EP에 대한 MAP의 비율이 10 wt%로 증가함에 따라 증가하였다. 이는 4EP와 MAP 사이의 분자상호작용이 증가하였기 때문으로 사료된다. 열안정성과 관련있는 분해 활성화 에너지 ( $E_{t}$ )는 Coats-Redfern 방법을 이용하여 구하였으며 MAP의 함량비가 10에서 30 wt% 내에서 증가하였다. 이는 블렌드 시스템에서의 가교 밀도의 증가 때문으로 사료된다. 유변학적 특성은 레오미터를 이용하여 등온 조건하에서 검토하였고, 겔화 시간과 경화 온도를 이용한 Arrhenius 방정식을 적용하여 가교 활성화 에너지 ( $E_{c}$ )를 검토한 결과, $E_{a}$ 와 유사한 경향을 나타내었다. 기계적 계면특성인 파괴인성 ( $K_{IC}$ )은 시편의 semi-IPN구조 거동으로 고찰하였다.

• 열처리공학회지
• /
• 제16권5호
• /
• pp.260-266
• /
• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• Journal of Welding and Joining
• /
• 제20권5호
• /
• pp.106-112
• /
• 2002

In the present study, the wettability and interfacial tension between (bare Cu, electroless Ni/cu, immersion Au/Ni/Cu) substrates and indium solder were investigated as a function of soldering temperature, types of flux. The wettability of In solder increased with soldering temperature and solid content of flux. The wettability of In solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. On the bare Cu substrate, In solder wet better than any of the substrate metal finishes tested. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and improved wettability. For the identification of intermetallic compounds, X-Ray Diffraction(LRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu11In9 and In27Ni10 are observed f3r different substrates respectively. The wetting kinetics is investigated by measuring wetting time with the wetting balance technique. The activation energy of wetting calculated for the In solder/cu substrate and In solder/electroless Au/Ni/Cu substrate are 36.13 and 27.36 kJ/mol, respectively.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
• /
• pp.475-480
• /
• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

• 한국복합재료학회:학술대회논문집
• /
• 한국복합재료학회 2004년도 추계학술발표대회 논문집
• /
• pp.104-107
• /
• 2004

In this work, the blend of diglycidylether of bisphenol A (DGEBA) and modified polyurethane (PU) was prepared and characterized in the cure behaviors and mechanical interfacial properties. The N-benzylpyrazinium hexafluoroantimonate was used as a cationic initiator for cure, and the content of PU was varied within 0-20 phr. The cure behaviors and mechanical interfacial properties were studied by DSC, near­IR, and the critical stress intensity actor $(K_{IC})$ measurements. Also thermal stabilities were carried out by TMA and TGA analyses. As a result, the cure activation energy $(E_a)$ and the conversion $(\alpha)$ were slightly increased with increasing the PU content, and a maximum value was found at 10 phr PU. The mechanical interfacial properties measured from $K_{IC}$ showed a similar behaviors with the results of conversion. These results were probably due to the increase of the hydrogen bonding between the hydroxyl groups of DGEBA and isocyanate groups in PU.

• 마이크로전자및패키징학회지
• /
• 제10권3호
• /
• pp.37-42
• /
• 2003

전자 패키징에 사용되는 솔더합금에 납을 함유됨으로써 인하여 야기되는 환경적 문제와 인체 유해성 때문에 Pb-Sn 합금계를 대체할 수 있는 새로운 무연 솔더 재료의 필요성이 대두되고 있다. 새로운 솔더합금의 개발에 있어서 솔더 조인트의 신뢰성이 가장 중요한 문제라고 할 수 있는데, 솔더 조인트의 신뢰성은 솔더와 기판 사이의 계면 반응 형태와 그 정도에 의해서 크게 영향을 받기 때문에 솔더와 기판 사이의 계면 현상에 관한 더 깊은 이해가 필요하게 된다 솔더링 동안 기판/솔더 계면에서 가장 먼저 생성되는 금속간 화합물의 상을 예측하기 위한 열역학적인 방법이 제안되었다. 계면 에너지와 석출 구동력의 함수로 표현되는 각각의 금속간 화합물에 대한 핵생성 활성화 에너지를 비교함으로써 활성화 에너지가 가장 낮은 금속간 화합물이 가장 먼저 생성된다고 예측하였다. 거기에 더해 에너지를 기반으로 한 계산을 통하여 솔더 조인트에서 금속간 화합물의 입자 형상을 설명하였다. 울퉁불퉁한 계면을 가진 금속간 화합물의 Jackson의 parameter 값은 2보다 작은 반면 평평한 입자의 경우 2보다 크게 된다.

• 한국재료학회지
• /
• 제19권11호
• /
• pp.625-630
• /
• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.