• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.2
• /
• pp.77-82
• /
• 1992

When a crystal is grown by FZ process, the melt zone is located at between the solid of upper and lower side and is kept by the solid-liquid interface tension. On the surface of the melt zone, a surface tension gradient is occured by the difference of temperature and solute concentration, it is the driving force of marangoni flow. The crystal even in the steady state growth can become imperfect for the dislocation distribution and the solute concentration in the peripheral region of the crystal are higher than those in the inner part and the probability of the formation of the defects such as voids, bubble penetration, secondary phase creation and crack is high near the solid-liquid interface. This is because the solid -liquid interface becomes irregular because of the local variation of temperature in that region due to marangoni convection.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.335-335
• /
• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Korean Journal of Materials Research
• /
• v.28 no.2
• /
• pp.118-123
• /
• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.230-233
• /
• 1996

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.431-433
• /
• 2000

In this paper, we evaluated the dielectric properties and thermal analysis on sliced XLPE sheet from 154kV power cable and compared with 22kV XLPE sheet. As the result, dielectric constant was not applied voltage dependance but trended to increase with temperature. Test result presented that tan$\delta$ of XLPE with Interface was trend to increased.

• IE interfaces
• /
• v.6 no.2
• /
• pp.171-181
• /
• 1993

In this study, a process management system is designed that can automatically control the heat treating atmosphere, and a managment software is developed to monitor and control continously the heat treating process using a n interface device. Especially, a communication protocol is developed to control and monitor atmosphere condition, temperature, surrounding gas, and time. The developed interface device, called COMPORT SELECTOR is to send and receive information from PID controllers and PLC via RS-232C communication. This system will reduce manufacturing cost and cycle time, and improve the effectiveness of working process and quality.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
• /
• 1996.11a
• /
• pp.24-29
• /
• 1996

The objective of this research is to study on the formations of thermal stratification in a room in case of several furniture fires such as trashcan, chair, carpet, sofa, mattress and wardrobe as a fire starter in a residential room by performing the experimental studies. The uniformly distributed fire in case of carpet showed that the ignition and the initial growth period were relatively short while the fully developed period was considerably long. The concentrated fires such as the mattress and wardrobe showed that the ignitions and the initial growth periods were relatively long. When fire spread to only one direction, like the case for the trashcan with a regular shape, there was one peak of temperature profile, and for the irregular shaped furniture such as chair, sofa, mattress and wardrobe, there were two or more peaks. The interface heights for the furniture fires were around 1(m) mataining constant state. However, at the time of the maximum temperature, the interface height was lowered to 0.25(m)-0.75(m) from the floor

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.12 no.4
• /
• pp.381-387
• /
• 2000

An experimental study on the stratified fluids was carried out to investigate the flow characteristics, heat transfer through the interface of fluids, and the applications of thermal behaviors in the square cavity. The same volume of water and silicon oil was filled in it. The experiments were performed with the variations of initial temperatures and cooling surface temperatures. And the effect of vertical or horizontal cooling surface positions in the square cavity was investigated. When the cooling surface temperatures were $-4^{\circ}C$ , the supercooling phenomena were observed for both cases of cooling surface positions in the full region regardless of the initial temperature of fluid. In the square cavity with horizontal cooling surfaces, the lower the initial temperatures were, the longer the supercooling durations were, and with vertical cooling surface the lower the initial temperatures were, the shorter the supercooling durations were.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.2
• /
• pp.91-95
• /
• 2000

The effects of argon gas flow on the axial temperature gradient near the interface, the oxygen concentration, and the radial oxygen uniformity was investigated for 8-inch CZ silicon growth. As argon flow rate was increased, the temperature gradient was increased in the crystal near the crystavmelt interface and the oxygen content in the crystal was decreased. But the radial oxygen uniformity was deteriorated. It was found that argon flow is one of the important growing parameters to affect the quality of crystals such as oxygen content and uniformity.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.24 no.10
• /
• pp.1380-1387
• /
• 2000

The existing theoretical models for steady two-dimensional free convective laminar film condensation of pure saturated or superheated vapor under atmospheric pressure on isothermal vertical wall have been reviewed. To investigate the effects such as inertia, thermal convective and liquid-vapor interface shear stress, the models of constant or variable properties in liquid film for condensation of saturated vapor are compared in detail with Nusselt model. Also, for condensation of superheated vapor, the effects of superheated temperature and variable properties in liquid and vapor layers are examined and then a new correlation is proposed to predict the heat transfer. The results are in good agreement with the Shang's correlation within 2% errors.