• Title/Summary/Keyword: interface temperature

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Role of ${\alpha}-Al_2O_3$ buffer layer in $Ba-ferrite/SiO$ magnetic thin films (Ba-페라이트/$SiO_2$ 자성박막에서 ${\alpha}-Al_2O_3$ buffer 층의 역할)

  • Cho, Tae-Sik;Jeong, Ji-Wook;Kwon, Ho-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.267-270
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    • 2003
  • We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

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Synthesis of Resol Type Phenol Resins and Their Reaction Properties (Resol형 페놀수지의 합성과 반응특성)

  • Kim, Dong-Kwon;Joe, Ji-Eun;Kim, Jung-Hun;Park, In Jun;Lee, Soo-Bok
    • Applied Chemistry for Engineering
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    • v.16 no.2
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    • pp.288-291
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    • 2005
  • Resol type phenol-formaldehyde (PF) resin was synthesized by addition reaction of formaldehyde (F) and phenol (P). And the PF resin was synthesized by condensation reaction in which water was removed. In this work, we studied the influence of experimental parameters in the addition reaction, such as F/P mole ratio, amount of catalyst, reaction temperature, reaction time, and so on. Also, we studied the influence of molecular weight and viscosity of PE resin as a function of condensation time. As a result, in addition reaction, the reaction time decreased remarkably as the catalyst concentration increased, and the time decreased with increasing reaction temperature at a constant catalyst concentration. Also, in condensation reaction, the viscosity of resol type PF resin increased from 1500 to 9000 cps as a function of condensation time; molecular weight showed from 500 to 1100 g/mol.

Mechanical and metallurgical properties of diffusion bonded AA2024 Al and AZ31B Mg

  • Mahendran, G.;Balasubramanian, V.;Senthilvelan, T.
    • Advances in materials Research
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    • v.1 no.2
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    • pp.147-160
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    • 2012
  • In the present study, diffusion bonding was carried out between AZ31B magnesium and AA2024 aluminium in the temperature range of $405^{\circ}C$ to $475^{\circ}C$ for 15 min to 85 min and 5MPa to 20 MPa uniaxial loads was applied. Interface quality of the joints was assessed by microhardness and shear testing. Also, the bonding interfaces were analyzed by means of optical microscopy, scanning electron microscopy, energy dispersive spectrometer and XRD. The maximum bonding and shear strength was obtained at $440^{\circ}C$, 12 MPa and 70 min. The maximum hardness values were obtained from the area next to the interface in magnesium side of the joint. The hardness values were found to decrease with increasing distance from the interface in magnesium side while it remained constant in aluminium side. It was seen that the diffusion transition zone near the interface consists of various phases of $MgAl_2O_4$, $Mg_2SiO_4$ and $Al_2SiO_5$.

Thermomechanical Analysis of Functionally Gradient Al-$SiC_{p}$ Composite for Electronic Packaging (전자패키지용 경사조성 Al-$SiC_{p}$ 복합재료의 열 . 기계적 변형특성 해석)

  • 송대현;최낙봉;김애정;조경목;박익민
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2000.04a
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    • pp.175-183
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    • 2000
  • The internal residual stresses within the multilayered structure with shan interface induced by the difference in thermal expansion coefficient between the materials of adjacent layers often provide the source of failure such as delamination of interfaces and etc. Recent development of the multilayered structure with functionally graded interface would be the solution to prevent this kind of failure. However a systematic thermo-mechanical analysis is needed fur the customized structural design of multilayered structure. In this study, theoretical model for the thermo-mechanical analysis is developed for multilayered structures of the Al-$SiC_p$ functionally graded composite for electronic packaging. The evolution of curvature and internal stresses in response to temperature variations is presented for the different combinations of geometry. The resultant analytical solutions are used for the optimal design of the multilayered structures with functionally graded interface as well as with sharp interface.

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Effects of natural convection on the melt/solid interface shape in the HEM process (열교환법 공정에서 고/액 계면의 형태에 미치는 자연대류의 영향)

  • 왕종회;김도현
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.41-46
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    • 1997
  • The change of flow field and the effects of convective heat transfer on the shape and location of melt/crystal interface has been studied during the crystal growth by the heat exchanger method. Although the thermal structure is stable in the crucible, the flow due to the natural convection driven by radial temperature gradient is significant, because the thermal stability is broken by the hemispherical melt/crystal interface shape. The maximum interface deflection with convection is smaller than without and the convective heat transfer should be considered to simulate the heat transfer process of heat exchanger method rigorously.

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A Study for Joining of Alumina Soldered by SiO$_2$-CaO-A1$_2$O$_3$ Glasses (SiO$_2$-CaO-Al$_2$O$_3$계 유리 솔더에 의한 알루미나의 접합 현상에 관한 연구)

  • 안병국
    • Journal of Welding and Joining
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    • v.21 no.2
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    • pp.35-41
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    • 2003
  • Sintered alumina ceramics were joined by 2 kinds of SiO$_2$-CaO-A1$_2$O$_3$ glass solders having a similar expansivity as alumina. Wetting of glass/alumina was examined by sessile drop method. The observation of interface and bending strength related to alumina/glass/alumina systems were investigated by means of SEM/EDX and 4-point bending test. the result are summarized as follow: (1) Wetting of glass solders on alumina was good at temperatures higher than 145$0^{\circ}C$. (2) When the joining temperature wan high, diffusion and/or reactions between solder md alumina took place at the interface. These diffusions and reactions occurring at the interface greatly affected the bending strength of joining body. (3) Highest strength corresponding to 80% that of alumina was obtained by the solder of 35SiO$_2$-35CaO-30A1$_2$O$_3$(wt%) glass.

Behaviors of the interface cracks during an Al-Fe dissimilar joining (Al-Fe 이종재료 접합 계면에서의 크랙 거동)

  • Gang Nam-Hyeon;Kim Cheol-Hui;Kim Jun-Gi;Lee Chang-U
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.59-61
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    • 2006
  • The $CO_2$ laser cladding was conducted on an AC2B alloy with feeding Fe-based powders. A powder feeding rate (PFR) and a travel velocity were related with the cracks adjacent to the Fe/Al interface. Preheating temperature was varied to study the interface crack. Preheating to $250^{\circ}C$ during the laser cladding suppressed the interface crack ratio (ICR). The ICR was limited for the single pass clad and the reciprocating test for the slide wear was conducted on an overlay cladding experiment. Comparing with no overlap overlay, the overlay clad with 50% overlap showed better wear resistance.

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A Study on the Diffusion Behaviors in Weld Interface of Cr-Mo Steel/Austenitic Stainless Steel (Cr-Mo강/오스테나이트계 스테인리스강 용접재의 용접계면에서의 확산거동에 관한 연구)

  • 김동배;이상율;이종훈;이상용;양성철
    • Journal of Welding and Joining
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    • v.17 no.4
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    • pp.46-52
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    • 1999
  • Some of the pressurized reactor pressure vessels used in many chemical plants are made of low alloy carbon steel plates internally clad with an austenitic stainless steel for improved anti-corrosion properties. In this study, metallurgic structure of the weld interface of A 387 Grade12Class1 low alloy carbon steel claded with A182-F321 austenitic stainless steel after thermal exposure simulation heat treatment was investigated to display a characteristic behavior of dissimilar metal weld interface with thermal exposure during service at high temperature and pressure. EPMA, STEM, vickers-hardness test were performed and the results were correlated with the microstructure. To estimate the depth of the carburized/decarburized bands quantitatively, a model for carbon diffusion was proposed. The validity of the proposed theoretical relationships was confirmed by the directly measured data from the welded parts failed during service.

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Auger Study of LPE Grown In Ga As P/In P Heterostructure (Auger 전자현미경을 이용한 LPE에 의해서 성장된 InGaAsP/InP 이종접합계면에 대한 연구)

  • 김정호;권오대;박효현;남은수
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.12
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    • pp.1656-1662
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    • 1988
  • Auger depth profiles of various In Ga As P/In P heterojunctions grown by liquid phase epitaxial techniques under different growth conditions such as diffusion temperature, diffusion time and dopants, have been obtained. The surface contaminations of In Ga As have been investigated. We found that the samples with Zn diffusion exhibit significant interface grading phenomena including In depletion, Ga richness and P richness at the In Ga As P/In P interface, and In outdiffusion at the surface. The main surface contamination was found to be due to carbon and oxygen species. It can be suggested that Zn gettering takes a major role in such phenomena as interface grading, in depletion, and Ga and P richness at the interface.

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The Behavior of Intrinsic Bubbles in Silicon Wafer Direct Bonding (실리콘 웨이퍼 직접접합에서 내인성 Bubble의 거동에 관한 연구)

  • Moon, Do-Min;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.3 s.96
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    • pp.78-83
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    • 1999
  • The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

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