• Proceedings of the KSPS conference
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• 2006.11a
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• pp.14-18
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• 2006

The role of dialogue manager is to select proper actions based on observed environment and inferred user intention. This paper presents stochastic model for dialogue manager based on Markov decision process. To build a mixed initiative dialogue manager, we used accumulated user utterance, previous act of dialogue manager, and domain dependent knowledge as the input to the MDP. We also used dialogue corpus to train the automatically optimized policy of MDP with reinforcement learning algorithm. The states which have unique and intuitive actions were removed from the design of MDP by using the domain knowledge. The design of dialogue manager included the usage of natural language understanding and response generator to build short message based remote control of home networked appliances.

• Journal of National Security and Military Science
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• s.1
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• pp.249-267
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• 2003

EEG is an electrical signal, which occurs during information processing in the brain. These EEG signals have been used clinically, but nowadays we are mainly studying Brain-Computer Interface (BCI) such as interfacing with a computer through the EEG, controlling the machine through the EEG. The ultimate purpose of BCI study is specifying the EEG at various mental states so as to control the computer and machine. This research makes the controlling system of directions with the artifact that are generated from the subject's will, for the purpose of controlling the machine correctly and reliably. We made the system like this. First, we select the particular artifact among the EEG mixed with artifact, then, recognize and classify the signals' pattern, then, change the signals to general signals that can be used by the controlling system of directions.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.182-187
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• 2017

Synchronous generators have been significantly applied in large-scale power plants and its monitoring systems are additionally established to sequentially observe states and outputs. We develop a computer based monitoring device for three-phase synchronous power generators in this paper. First, a test-bed of such generator system is created and then a interface board is constructed to transfer electric signals including the output voltage and the current from generators into a computer system via a data acquisition device. Its RMS(root-mean-square) values are continuously shown on a screen of computer systems and its time-histories graphs are additionally illustrated under a graphic user interface(GUI) mode. Lastly, we carry out real-time experiments using the generator system with the monitoring device to demonstrate its reliability and superiority by comparing results of a generic power analyzer which is well-used in measuring various power systems practically.

• International Journal of Automotive Technology
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• v.7 no.2
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• pp.195-199
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• 2006

According to the United States FMVSS 208, every passenger car on the market after September of 2006 must install a safety system, which can deploy the airbag with different intensity or suppression based on the passenger type, to reduce infant and child injuries from airbag deployments. The Weight Classification System, which has been developed by Hyundai Autonet, is a system that classifies the person occupying the passenger seat. To overcome sensing problems due to the weight sensors small voltage, the Distributed Systems Interface is adopted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• MALSORI
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• no.60
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• pp.125-144
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• 2006

W3C announced a standard software architecture for multimodal context-aware middleware that emphasizes modularity and separates structure, contents, and presentation. We implemented a distributed multimodal interface system followed the W3C architecture, based on SCXML. SCXML uses parallel states to invoke both XHTML and VoiceXML contents as well as to gather composite or sequential multimodal inputs through man-machine interactions. We also hire Delivery Context Interface(DCI) module and an external service bundle enabling middleware to support context-awareness services for real world environments. The provision of personalized user interfaces for mobile devices is expected to be used for different devices with a wide variety of capabilities and interaction modalities. We demonstrated the implemented middleware could maintain multimodal scenarios in a clear, concise and consistent manner by some experiments.

• Interaction and multiscale mechanics
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• v.4 no.1
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• pp.65-83
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• 2011

In this study, two extreme cases of compatibility of the horizontal displacements between the foundation and soil are considered, for which the pressure and settlements of the isolated footings and member end actions in structural elements are obtained using the three dimensional models and numerical experiments. The first case considered is complete slip between foundation and soil, termed as the un-coupled analysis. In the second case of analysis, termed as the coupled analysis, complete welding is assumed of joints between the foundation and soil elements. The model and the corresponding computer program developed simulate these two extreme states of compatibility giving insight into the variation of horizontal displacements and horizontal stresses and their intricacies, for evaluation of the influence of using the interface elements in soil-structure interaction analysis of three dimensional multiscale structures supported by isolated footings.

• Journal of Korean Library and Information Science Society
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• v.48 no.3
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• pp.281-302
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• 2017

This study examined the differences in a searcher's mental states of a complex information search and retrieval task during information search process between the two groups: participants who were exposed to mental demand manipulation and those not exposed. Data from the experiments and questionnaires were analyzed. Based on qualitative approach and quantitative analyses, the results indicated that the participants exposed to mental demand required more thoughts; addressed negative emotions more often; reduced a searcher's efforts; and interrupted search performance than those not exposed. These results suggest that mental demand contributed to a searcher's perceived thought, emotion, effort, and performance, although these mental states differed in relative contribution of information search process. Significant differences were found between the two groups with respect to the component of mental demand, performance, and frustration of the NASA-TLX subjective cognitive load. These results have implications for search user interface design and information search systems among others.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.83-89
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• 1989

Ferroelectric $PbTiO_3$ thin film is deposited with rf sputtering at substrate temperature of $100-150^{\circ}C$. It is found that this has pyrochlore structure of amorphous type by X-ray diffractive analysis. Thermal annealing has excellent characteristics at $550^{\circ}C$ and laser annealing has best crystalline structure in case of scanning with 50 watts. Interface states in MFST and MFOST structure with a $PbTiO_3$ ferroelectric thin film gate have been investigated from analysis of C-V data. The interface states density has been drastically reduced by inserting an oxide layer between ferroelectric and semiconductor. The observed effect increase feasibility of employing ferroelectric thin films such as nonvolatile memory field effect transistor, IR optical FET, and Image Devices with a ferroelectric layer.