• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.57-58
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• 1992

The NH$_3$oxidation, which forms thermal oxide layer on silicon substrate with pure $O_2$gas added with small amounts of NH$_3$gas, has good interface sates due to activated gettering effect during oxidation. The superiority of interfae state in NH$_3$ oxidation method is not affected by preprocess but by gettering during oxidation. The dramatec reduction fo interface state is conformed with observing OSF when NH$_3$ oxide is annealed in NH$_3$ atmosphere.

• Tribology and Lubricants
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• 제29권6호
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• pp.392-396
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• 2013

Biodiesel fuels contain unsaturated fatty acid ester, which can easily oxidize, especially when exposed to ultraviolet light. The products formed by this oxidation give rise to sediment or gum formation. As a result, the fuel can contribute to the corrosion and plugging of the filter pump. Antioxidants have been used in an effort to stabilize biodiesels, but there is still a need for a biodiesel composition with improved oxidation stability. In general, good fuel compositions should provide synergistic combinations of a biodiesel and antioxidants. Our work involved the synthesis of antioxidants to improve the oxidative stability of biodiesel fuel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• 한국재료학회지
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• 제28권2호
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• 한국표면공학회지
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• 제27권2호
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• pp.91-98
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• 1994

For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• 열처리공학회지
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• 제11권3호
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• pp.186-191
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• 1998

An oxidation behavior of 304 and 316 stainless steels were studied in dry air. After solution treatment, specimens were polished up to $1{\mu}m$ $A1_2O_3$ grade and then subjected to oxidation treatment in dry air at $800^{\circ}C{\sim}1200^{\circ}C$. The oxidation behavior between matrix and oxide scale was analyzed with SEM, EDS and XRD. When oxidation treatment was conducted at $1200^{\circ}C$, large thickness of Fe oxide scale was formed on top of surface and fine $(Cr,Fe)_2O_3$ oxide film was formed below it. Cr rich zone existed at interface between metal and $(Cr,Fe)_2O_3$ oxide layer, and it was believed that this zone acted as obstacle to oxidation. Most of Ni was detected at the interface between metal and $(Cr,Fe)_2O_3$ and also detected at the interface between $Fe_2O_3$ and $(Cr,Fe)_2O_3$.