• Title/Summary/Keyword: interdiffusion

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Surface Characteristics of the Galvannealed Coating in Interstitial-Free High Strengthen Steels Containing Si and Mn (Si, Mn함유 IF 고강도 합금화 용융아연도금강판의 표면특성)

  • Jeon, Sun-Ho;Chin, Kwang-Geun;Kim, Dai-Ryong
    • Korean Journal of Metals and Materials
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    • v.46 no.2
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    • pp.58-64
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    • 2008
  • Surface-void defects observed on the galvannealed(GA) steel sheets in Interstitial-free high-strengthened steels containing Si and Mn have been investigated using the combination of the FIB(Focused Ion Beam) and FE-TEM(Field Emission-Transmission Electron Microscope) techniques. The scanning ion micrographs of cross-section microstructure of defects showed that these defects were identified as craters which were formed on the projecting part of the substrate surface. Also, those craters were formed on the Si or Mn-Si oxides film through the whole interface between galvannealed coating and steel substrate. Interface enrichments and oxidations of the active alloying elements such as Si and Mn during reduction annealing process for galvanizing were found to interrupt Zn and Fe interdiffusion during galvannealing process. During galvannealing, Zn and Fe interdiffusion is preferentially started on the clean substrate surface which have no oxide layer on. And then, during galvannealing, crater is developed with consumption of molten zinc on the oxide layer.

The GaAs Inversion-type MISFET using Fluoride Gate Insulator (불화물 게이트 절연막을 이용한 반전형 GaAs MISFET)

  • KWang Ho Kim
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.3
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    • pp.61-66
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    • 1993
  • The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

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Influence of Initial States of Test Sheets on Adhesion of NR/NR, BR/BR, and NR/BR (시험편의 초기 상태가 NR/NR, BR/BR, 그리고 NR/BR 접착에 미치는 영향)

  • Choi, Sung-Seen;Kim, Jong-Chul;Woo, Chang-Su
    • Elastomers and Composites
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    • v.42 no.2
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    • pp.107-111
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    • 2007
  • Adhesion of NR and BR composites with different initial states of precured or uncured conditions was studied. Adhesion between the NR and BR sheets as well as adhesion between the same rubber sheets was investigated. Adhesion forces of the uncured/uncured specimens were larger than those of the cured/uncured and cured/cured ones. The cured/cured samples and uncured NR/cured BR specimen were fully peeled out by the peel test. When one sheet was broken during the peel test, the sheet having the higher crosslink density was broken irrespective of the rubber types. Adhesion forces of the same rubber sheets were higher than those of the different ones and adhesion force of the cured NR/uncured BR sample was higher than that of the uncured NR/cured BR one. The experimental results were explained with the crosslink density and interdiffusion of rubber chains.

High Temperature Ohmic Contacts to Monocrystalline $\beta$-SiC Thin Film Using Nitride Thin Films (질화물 박막을 이용한 단결정 $\beta$-SiC의 고온 ohmic 접촉 연구)

  • Choe, Yeon-Sik;Na, Hun-Ju;Jeong, Jae-Gyeong;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.21-28
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    • 2000
  • Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

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Cross-sectional Radiation Type Mixer into the Boundary Surface using PMN-PT for Micromixing (마이크로믹서에의 응용을 위해 PMN-PT를 이용한 경계면과 수직방향 방사형 믹서)

  • Heo Pil Woo;Yoon Eui Soo;Kho Kwang Sik
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.42 no.1
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    • pp.33-37
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    • 2005
  • A micromixer plays an important role in Bio-MEMS or μ-TAS. Mixing is generally generated by turbulence and interdiffusion of two fluids. Because of low Reynolds number values (Re << 2000) within microchannels, it is difficult to generate turbulence, and consequently mixing mainly depends on interdiffusion. So, channel distance is often prohibitively long to mix two different fluids properly. To reduce this mixing length, we proposed a new mixer for micromixing in which two fluids were effectively mixed by an ultrasonic wave generated by PMN-PT. The ultrasonic wave was radiated into a chamber In the cross-sectional direction into the boundary surface formed by two fluids. The two fluids were positioned one on top of the other. The mixing state was measured by observing the color of samples due to the reaction of NaOH and phenolphthalein.

Thermal Compatibility of High Density U-Mo Powder Fuels Prepared by Centrifugal Atomization

  • Kim, Ki-Hwan;Ahn, Hyun-Suk;Chang, Se-Jung;Ko, Young-Mo;Lee, Don-Bae;Kim, Chang-Kyu;Kuk, Il-Hyun
    • Proceedings of the Korean Nuclear Society Conference
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    • 1997.05b
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    • pp.165-170
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    • 1997
  • Samples of extruded dispersions of 24 vol.% spherical U-2wt%Mo and U-10wt.%Mo powders in an aluminum matrix were annealed for over 2,000 hours at 40$0^{\circ}C$. No significant dimensional changes occurred in the U-1025.%Mo/aluminum dispersions. The U-2wt.%Mo/aluminum dispersion, however, increased in volume by 26% after 2,000 hours at 40$0^{\circ}C$. This large volume change is mainly due to the formation of voids and cracks resulting from nearly complete interdiffusion of U-Mo and aluminum. Interdiffusion between U-10wt.%Mo and aluminum was found to be minimal. The different diffusion behavior is primarily due to the fact that U-2wt.%Mo decomposes from an as-atomized metastable r-phase(bcc) solid solution into the equilibrium r-U and U$_2$Mo two-phase structure during the experiment, whereas U-10wt.%Mo retains the metastable r-phase structure after the 2,000 hours anneal and thereby displays superior thermal compatibility with aluminum compared to U-2wt.%Mo. In addition, the molybdenium supersaturated in U-10wt.%Mo particles inhibits the diffusion of aluminum atoms along the grain boundary into the particle. Also, the dissolution of only a few Mo atoms in UAL$_3$ retards the formation of the intermediate phase, as Mo atoms need to migrate from new intermetallic compounds to unreacted islands.

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Effect of Vapor Deposition on the Interdiffusion Behavior between the Metallic Fuel and Clad Material (금속연료-피복재 상호확산 거동에 미치는 기상증착법의 영향)

  • Kim, Jun Hwan;Lee, Byoung Oon;Lee, Chan Bock;Jee, Seung Hyun;Yoon, Young Soo
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.549-556
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    • 2011
  • This study aimed to evaluate the performance of diffusion barriers in order to prevent fuel-cladding chemical interaction (FCCI) between the metallic fuels and the cladding materials, a potential hazard for nuclear fuel in sodium-cooled fast reactors. In order to prevent FCCI, Zr or V metal is deposited on the ferritic-martensitic stainless steel surface by physical vapor deposition with a thickness up to $5{\mu}m$. The diffusion couple tests using uranium alloy (U-10Zr) and a rare earth metal such as Ce-La alloy and Nd were performed at temperatures between 660~800$^{\circ}C$. Microstructural analysis using SEM was carried out over the coupled specimen. The results show that significant interdiffusion and an associated eutectic reaction ocurred in the specimen without a diffusion barrier. However, with the exception of the local dissolution of the Zr layer in the Ce-La alloy, the specimens deposited with Zr and V exhibited superior eutectic resistance to the uranium alloy and rare earth metal.

Facilitation of the four-mask process by the double-layered Ti/Si barrier metal for oxide semiconductor TFTs

  • Hino, Aya;Maeda, Takeaki;Morita, Shinya;Kugimiya, Toshihiro
    • Journal of Information Display
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    • v.13 no.2
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    • pp.61-66
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    • 2012
  • The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.