• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.71-74
• /
• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.23-26
• /
• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Journal of Welding and Joining
• /
• v.22 no.1
• /
• pp.77-82
• /
• 2004

The effect of bonding condition on tensile properties of joints diffusion bonded spheroidal graphite cast iron, FCD60 to Cr-Mo steel, SCM 440 was investigated. Diffusion bonding was performed with various temperatures, holding times, pressures and atmospheres. All tensile specimens were fractured at the bonding interface. The tensile strength and elongation was increased with increasing bonding temperature. Especially, tensile strength of joints bonded at 1123K was higher than that of a raw material, FCD60, and tensile strength of joints bonded at 1173K was equal to that of a raw material, SCM440, but elongation of all joints was lower than those of raw materials. There was little the effect of holding time on the tensile properties. In comparison with bonding atmosphere, the difference of tensile strength was not observed, but elongation of joint bonded at vacuum(6.7mPa and 67mPa) was higher than that of Ar gas. Higher the degee of vacuum, elongation increased. Tensile properties of diffusion bonds depended on microstructures of cast iron at the interface and void ratio. Microstructures of cast iron at interface changed with temperature, because decarburizing and interdiffusion at the interface occurs and transformation of austenite-1 ferrite + graphite occurs on the cooling process. The void ratio decreased with increasing temperature, especially, effected on the elongation.

• Korean Journal of Materials Research
• /
• v.19 no.7
• /
• pp.356-361
• /
• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of Surface Science and Engineering
• /
• v.32 no.1
• /
• pp.49-60
• /
• 1999

The protective oxide scales and coatings formed on high temperature materials must be preserved in high temperature atmosphere. And the thermal stresses induced by thermal cycling and the growth stresses by the formation of oxide scales can cause the loss of adherence and spalling of the oxide scales and coated layers. Among the coating processes Al diffusion coating is favored due to thermochemical stability and superior adherence in an hostile atmosphere. In this study, protective oxide forming element, Al was coated on Ni, Inconel 600 and 690 by diffusion coating process varying coating temperature and time. And the surface stability and adherence of oxide scales formed on those Al diffusion coated materials were evaluated by thermal cycling test. Al diffusion coated specimens showed superior cyclic oxidation resistance compared to bare ones and specimens coated for longer period had better cyclic oxidation resistance, due to the abundant amount of Al in the coated layer. Meanwhile Al diffusion coated Inconel 600 and 690 showed improved cyclic oxidation resistance by the effect of Al in the coated layer and Cr in the substrate. Comparing both Al diffusion coated Inconel 600 and 690, Al diffusion coated Inconel 690 maintained better adhesion between coated layer and substrate by virtue of the bridging effect resulting from the segregation of Cr in the interdiffusion zone.

• Journal of the Korean Applied Science and Technology
• /
• v.19 no.2
• /
• pp.131-136
• /
• 2002

As model waterborne acrylic coatings, mono-dispersed poly(butyl acrylate-methyl methacrylate) copolymer latexes of random copolymer and core/shell type graft copolymer were prepared by seeded multi-staged emulsion polymerization with particle size of $180{\sim}200$ nm using semi-batch type process. Sodium lauryl sulfate and potassium persulfate were used as an emulsifier and an initiator, respectively. The effect of particle texture including core/shell phase ratio, glass transition temperature and crosslinking density, and film forming temperature on the film formation and final properties of film was investigated using SEM, AFM, and UV in this study. The film formation behavior of model latex was traced simultaneously by the weight loss measurement and by the change of tensile properties and UV transmittance during the entire course of film formation. It was found that the increased glass transition temperature and higher crosslinking degree of latex resulted in the delay of the onset of coalescence of particles by interdiffusion during film forming process. This can be explained qualitatively in terms of diffusion rate of polymer chains. However, the change of weight loss during film formation was insensitive to discern each film forming stages-I, II and III.

• Korean Journal of Metals and Materials
• /
• v.50 no.8
• /
• pp.575-582
• /
• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Korean Journal of Metals and Materials
• /
• v.49 no.12
• /
• pp.950-955
• /
• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.6
• /
• pp.448-453
• /
• 2019

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

• Journal of Magnetics
• /
• v.9 no.3
• /
• pp.79-82
• /
• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.