• Title/Summary/Keyword: inter layer

Search Result 457, Processing Time 0.029 seconds

Optimization Of CMP for $SiO_2$ Thin Film with a Control of Temperature in Pad Conditioning Process (패드 컨디셔닝시 온도조절을 통한 산화막 CMP 최적화)

  • Choi, Gwon-Woo;Park, Sung-Woo;Kim, Nam-Hoon;Chang, Eui-Goo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.731-734
    • /
    • 2004
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

  • PDF

Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
    • /
    • v.1 no.1
    • /
    • pp.40-44
    • /
    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

  • PDF

Effects of Isolation Period Difference and Beam-Column Stiffness Ratio on the Dynamic Response of Reinforced Concrete Buildings

  • Chun, Young-Soo;Hur, Moo-Won
    • International Journal of Concrete Structures and Materials
    • /
    • v.9 no.4
    • /
    • pp.439-451
    • /
    • 2015
  • This study analyzed the isolation effect for a 15-story reinforced concrete (RC) building with regard to changes in the beam-column stiffness ratio and the difference in the vibration period between the superstructure and an isolation layer in order to provide basic data that are needed to devise a framework for the design of isolated RC buildings. First, this analytical study proposes to design RC building frames by securing an isolation period that is at least 2.5 times longer than the natural vibration period of a superstructure and configuring a target isolation period that is 3.0 s or longer. To verify the proposed plan, shaking table tests were conducted on a scaled-down model of 15-story RC building installed with laminated rubber bearings. The experimental results indicate that the tested isolated structure, which complied with the proposed conditions, exhibited an almost constant response distribution, verifying that the behavior of the structure improved in terms of usability. The RC building's response to inter-story drift (which causes structural damage) was reduced by about one-third that of a non-isolated structure, thereby confirming that the safety of such a superstructure can be achieved through the building's improved seismic performance.

Effective Properties of Multi-layered Multi-functional Composites

  • Kim, Byeong-Chan;Baltazar, Arturo;Kim, Jin-Yeon
    • Advanced Composite Materials
    • /
    • v.18 no.2
    • /
    • pp.153-166
    • /
    • 2009
  • A matrix method for evaluating effective electro-magneto-thermo-elastic properties of a generally anisotropic multilayered composite is presented. Physical variables are categorized into two groups: one that satisfies the continuity across the interface between layers and another that satisfies an average inter-layer compatibility (which is also exact). The coupled electro-magneto-thermo-elastic constitutive equation is accordingly reassembled into submatrices, which leads to the derivation of concise and exact matrix expressions for effective properties of a multilayered composite having the coupled physical effects. Comparing the results for a purely elastic multiplayer with those from other theoretical approaches validates the developed method. Examples are given for a PZT-graphite/epoxy composite and a $BaTiO_3-CoFe_2O_4$ multiplayer which exhibit piezo-thermoelastic and magnetoelectric properties, respectively. The result shows how a strong magnetoelectric effect can be achieved by combining piezoelectric and piezomagnetic materials in a multilayered structure. The magnetoelectric coefficient of the $BaTiO_3-CoFe_2O_4$ multiplayer is compared with those for fibrous and particulate composites fabricated with the same constituents.

Raman Spectroscopy Analysis of Inter Metallic Dielectric Characteristics in IC Device (Silicon 기반 IC 디바이스에서의 층간 절연막 특성 분석 연구)

  • Kwon, Soon Hyeong;Pyo, Sung Gyu
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.23 no.4
    • /
    • pp.19-24
    • /
    • 2016
  • Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

Polymer master fabrication for antireflection using low-temperature AAO process (저온 양극산화공정을 이용한 반사 방지용 폴리머 마스터 제작)

  • Shin, Hong-Gue;Kwon, Jong-Tae;Seo, Young-Ho;Kim, Byeong-Hee;Park, Chang-Min;Lee, Jae-Suk
    • Proceedings of the KSME Conference
    • /
    • 2008.11a
    • /
    • pp.1825-1828
    • /
    • 2008
  • A simple method for the fabrication of porous nano-master for antireflective surface is presented. In conventional fabrication methods for antireflective surface, coating method with low refractive index has usually been used. However, it is required to have high cost and long times for mass production. In this paper, we suggested the fabrication method of antireflective surface by the hot embossing process using the porous nano patterned master on silicon wafer fabricated by low-temperature anodic aluminum oxidation. Through multi-AAO and etching processes, nano patterned master with high aspect ratio was fabricated at the large area. Pore diameter and inter-pore distance are about 150nm and from 150 to 200nm. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.

  • PDF

Exploiting Packet Semantics in Real-time Multimedia Streaming

  • Hong, Sung-Woo;Won, You-Jip
    • Proceedings of the Korean Society of Broadcast Engineers Conference
    • /
    • 2009.01a
    • /
    • pp.118-123
    • /
    • 2009
  • In this paper, we propose packet selection and significance based interval allocation algorithm for real-time streaming service. In real-time streaming of inter-frame (and layer) coded video, minimizing packet loss does not imply maximizing QoS. It is true that packet loss adversely affects the QoS but one single packet can have more impact than several other packets. We exploit the fact that the significance of each packet loss is different from the frame type it belongs to and its position within GoP. Using packet dependency and PSNR degradation value imposed on the video from the corresponding packet loss, we find each packet's significance value. Based on the packet significance, the proposed algorithm determines which packets to send and when to send them. The proposed algorithm is tested using publicly available MPEG-4 video traces. Our scheduling algorithm brings significant improvement on user perceivable QoS. We foresee that the proposed algorithm manifests itself in last mile connection of the network where intervals between successive packets from the source and to the destination are well preserved.

  • PDF

Joining of Silicon Nitride to Carbon Steel using an Active Metal Alloys (활성 납재를 이용한 질화규소/탄소강 접합)

  • Choe, Yeong-Min;Jeong, Byeong-Hun;Lee, Jae-Do
    • Korean Journal of Materials Research
    • /
    • v.9 no.2
    • /
    • pp.199-204
    • /
    • 1999
  • As the engine design change to get high efficiency and performance of commercial diesel engine, surface wear of the cam follower becomes an important issues as applied load increasing at the contact face between cam follower and cam. Purpose of this study is the developing of the ceramic cam follower made of silicon nitride ceramic which is more wear resistant than the cast iron and sintered cam follower. Ceramic cam follower was made by direct brazing of thin ceramic disk to steel can follower body using active bracing alloy. Effect of joining condition on the interfacial phases and joining strength wer examined at bvarious joining temperatures, times, and cooling rates. Crowning resulted from the difference of thermal expansion coefficient after direct brazing without using any stress-relieving inter layer was measured. Interfacial phases are mainly titanium silicide and titanium nitride which are the products between active metal(Ti) in brazing alloy and silicon nitiride. Maximum joining strength of the ceramic metal joint, measured by DBS method, was 334MPa. Crowning(R) of the prototype ceramic cam follower was 1595mm. As machining for crowning is not necessary, production cost can be reduced.

  • PDF

Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode

  • Lee, Jae-Hoon;Lee, Hyung-Ju;Lee, Myoung-Bok;Hahm, Sung-Ho;Lee, Jung-Hee;Choi, Kue-Man
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2002.08a
    • /
    • pp.647-650
    • /
    • 2002
  • A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

  • PDF

A Study on the Effect of Pattern Density and it`s Modeling for ILD CMP (패턴 웨이퍼의 화학기계적 연마시 패턴 밀도의 영향과 모델링에 관한 연구)

  • Hong, Gi-Sik;Kim, Hyung-Jae;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.19 no.1
    • /
    • pp.196-203
    • /
    • 2002
  • Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.